Bulletin PD-20619 rev. B 02/02
70CRU02
Ultrafast Rectifier
Features
•
•
•
•
•
•
•
Two Common-Cathode Diodes
Ultrafast Reverse Recovery
Ultrasoft Reverse Recovery Current Shape
Low Forward Voltage Drop
Low Leakage Current
Optimized for Power Conversion: Welding and Industrial SMPS Applications
Up to 175°C Operating Junction Temperature
t
rr
= 28ns
I
F(AV)
= 70A
@T
C
= 145°C
V
R
= 200V
Description/ Applications
The 70CRU02 integrates two state-of-the-art International Rectifier’s Ultrafast recovery rectifiers in the common-
cathode configuration. The planar structure of the diodes, and the platinum doping life-time control, provide a
Ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability
characteristics.
These devices are thus intended for high frequency applications in which the switching energy is designed not to be
predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DC-
DC converters. Their extremely optimized stored charge and low recovery current reduce both over-dissipation in
the switching elements (and snubbers) and EMI/RFI.
Absolute Maximum Ratings
Parameters
V
R
I
F(AV)
I
FSM
P
D
T
J
, T
STG
Cathode to Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Power Dissipation
T
C
= 145°C
T
C
= 25°C
T
C
= 100°C
Per Diode
Per Diode
Per Module
Max
200
35
300
67
- 55 to 175
Units
V
A
W
°C
Operating Junction and Storage Temperatures
Case Styles
70CRU02
Base
Common
Cathode
2
1
3
2
Anode
1
Anode
2
TO-218
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Common
Cathode
1
70CRU02
Bulletin PD-20619 rev. B 02/02
Electrical Characteristics per Diode @ T
J
= 25°C (unless otherwise specified)
Parameters
V
BR
, V
r
V
F
Breakdown Voltage,
Blocking Voltage
Forward Voltage
Min Typ Max Units Test Conditions
200
-
-
-
-
-
V
V
V
V
µA
mA
pF
nH
I
R
= 60µA
I
F
= 35A
I
F
= 35A, T
J
= 125°C
I
F
= 35A, T
J
= 175°C
V
R
= V
R
Rated
T
J
= 150°C, V
R
= V
R
Rated
V
R
= 200V
Measured from A-lead to K-lead 5mm from
package body
0.95 1.09
0.9
0.85
-
-
50
10
1.0
0.9
60
2
-
-
I
R
Reverse Leakage Current
-
-
C
T
L
S
Junction Capacitance
Series Inductance
-
-
Dynamic Recovery Characteristics per Diode @ T
J
= 25°C (unless otherwise specified)
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
-
-
34
26
49
3.7
8.2
48.7
202
28
-
-
-
-
-
-
-
nC
A
ns
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 35A
V
RR
= 100V
di/dt = 200A/µs
I
F
= 1A
V
R
= 30V
di
F
/dt = 200A/µs
I
RRM
Peak Recovery Current
-
-
Q
rr
Reverse Recovery Charge
-
-
Thermal - Mechanical Characteristics
Parameters
R
thJC
R
thJC
R
thCS
(1)
Wt
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
Weight
Per Diode
Both Leg
Min
-
-
-
-
-
Typ
0.8
-
0.2
5.5
0.2
-
-
Max
0.9
0.45
-
-
-
2.4
20
Units
K/W
g
(oz)
N*m
lbf.in
T
Mounting Torque
1.2
10
(1) Mounting Surface, Flat, Smooth and Greased
2
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70CRU02
Bulletin PD-20619 rev. B 02/02
1000
1000
T
J
= 175˚C
Reverse Current - I
R
(µA)
100
125˚C
10
1
25˚C
Instantaneous Forward Current - I
F
(A)
100
0.1
0.01
0
50
100
150
200
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
1000
Junction Capacitance - C
T
(pF)
T = 175˚C
J
T = 25˚C
J
10
T = 125˚C
J
T = 25˚C
J
100
1
0
0.4 0.8 1.2 1.6
2
2.4 2.8 3.2 3.6
4
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
10
1
10
100
1000
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
1
Thermal Impedance Z
thJC
(°C/W)
P
DM
0.1
Single Pulse
(Thermal Resistance)
Notes:
t1
t2
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.0001
0.001
0.01
t
1
, Rectangular Pulse Duration (Seconds)
0.1
1
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Diode)
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3
70CRU02
Bulletin PD-20619 rev. B 02/02
180
Allowable Case Temperature (°C)
50
Average Power Loss ( W )
170
160
150
140
130
120
Square wave (D = 0.50)
110
Rated Vr applied
100
90
see note (3)
80
0
10
20
30
40
50
60
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
40
30
RMS Limit
DC
20
10
0
0
10
20
30
40
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
50
60
Average Forward Current - I
F(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
80
70
60
50
trr ( nC )
600
If = 35A
Vrr = 100V
If = 35A
Vrr = 100V
500
Tj = 125˚C
Qrr ( nC )
400
Tj = 125˚C
40
30
20
Tj = 25˚C
300
200
Tj = 25˚C
100
10
0
100
0
100
di
F
/dt (A/µs )
Fig. 8 - Typical Stored Charge vs. di
F
/dt
1000
1000
di
F
/dt (A/µs )
Fig. 7 - Typical Reverse Recovery vs. di
F
/dt
(3)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= rated V
R
4
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70CRU02
Bulletin PD-20619 rev. B 02/02
3
I
F
t
rr
t
a
t
b
4
V
R
= 200V
0
Q
rr
2
0.01
Ω
L = 70µH
D.U.T.
dif/dt
ADJUST
D
G
IRFP250
S
1. di
F
/dt - Rate of change of current through
zero crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from
zero crossing point of negative going I
F
to
point where a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
1
I
RRM
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
5
di
f
/dt
4. Q
rr
- Area under curve defined by
t
rr
and I
RRM
Q rr =
t rr x I
2
RRM
5. di
(rec) M
/ dt - Peak rate of change
of current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Parameter Test
Circuit
Fig. 10 - Reverse Recovery Waveform and
Definitions
Outline Table
Dimensions in inches (and milimetres)
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