MITSUBISHI LSIs
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
PRELIMINARY
Some of contents are subject to change w ithout notice.
DESCRIPTION
The MH16S72BDFA is 16777216 - word x 72-bit
Sy nchronous DRAM module. This consist of eighteen
industry standard 16M x 4 Sy nchronous DRAMs in
TSOP.
The TSOP on a card edge dual in-line package prov ides
any application where high densities and large of
quantities memory are required.
This is a socket-ty pe memory m odule ,suitable f or
easy interchange or addition of module.
85pin
1pin
FEATURES
Type name
Max.
Frequency
CLK
Access Time
[component level]
94pin
95pin
10pin
11pin
MH16S72BDFA-7
MH16S72BDFA-8
100MHz
100MHz
6ns (CL = 2, 3)
6ns (CL = 3)
Utilizes industry standard 16M X 4 Synchronous DRAMs in
TSOP package , industry standard Resistered buffer in TSSOP
package and industry standard PLL in TSSOP package
Single 3.3V +/- 0.3V supply
LVTTL Interface
Burst length 1/2/4/8/Full Page(programmable)
Burst W rite / Single W rite(programmable)
Auto precharge / All bank precharge controlled by A10
Auto refresh and Self refresh
4096 refresh cycles every 64ms
Discrete IC and module design conform to
PC/100 specification.
(module Spec. Rev. 1.2 and SPD 1.2A)
124pin
125pin
40pin
41pin
APPLICATION
Main memory unit for computers, Microcomputer memory.
168pin
84pin
MIT-DS-0329-0.0
MITSUBISHI
ELECTRIC
19/Jun/1999
1
MITSUBISHI LSIs
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
PIN NO.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
PIN NAME
VSS
DQ0
DQ1
DQ2
DQ3
VDD
DQ4
DQ5
DQ6
DQ7
DQ8
VSS
DQ9
DQ10
DQ11
DQ12
DQ13
VDD
DQ14
DQ15
CB0
CB1
VSS
NC
NC
VDD
/WE
DQMB0
DQMB1
/S0
NC
VSS
A0
A2
A4
A6
A8
A10
BA1
VDD
VDD
CK0
PIN NO.
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
PIN NAME
VSS
NC
/S2
DQMB2
DQMB3
NC
VDD
NC
NC
CB2
CB3
VSS
DQ16
DQ17
DQ18
DQ19
VDD
DQ20
NC
Vref,NC
CKE1
VSS
DQ21
DQ22
DQ23
VSS
DQ24
DQ25
DQ26
DQ27
VDD
DQ28
DQ29
DQ30
DQ31
VSS
CK2
NC
WP
SDA
SCL
VDD
PIN NO.
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
PIN NAME
VSS
DQ32
DQ33
DQ34
DQ35
VDD
DQ36
DQ37
DQ38
DQ39
DQ40
VSS
DQ41
DQ42
DQ43
DQ44
DQ45
VDD
DQ46
DQ47
CB4
CB5
VSS
NC
NC
VDD
/CAS
DQMB4
DQMB5
NC
/RAS
VSS
A1
A3
A5
A7
A9
BA0
A11
VDD
CK1
NC
PIN NO.
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
PIN NAME
VSS
CKE0
NC
DQMB6
DQMB7
NC
VDD
NC
NC
CB6
CB7
VSS
DQ48
DQ49
DQ50
DQ51
VDD
DQ52
NC
Vref,NC
REGE
VSS
DQ53
DQ54
DQ55
VSS
DQ56
DQ57
DQ58
DQ59
VDD
DQ60
DQ61
DQ62
DQ63
VSS
CK3
NC
SA0
SA1
SA2
VDD
NC = No Connection
MIT-DS-0329-0.0
MITSUBISHI
ELECTRIC
19/Jun/1999
2
MITSUBISHI LSIs
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Add
CKE0
/S0,2
DQM0-7
/W
/RAS
/CAS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CB0
CB1
CB2
CB3
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
D8
D5
D4
D3
D0
RCKE0
R/S0,2
RDQM0-7
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
CB4
CB5
CB6
CB7
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
D17
D15
D14
D13
D12
D9
10K
VDD REGE
D1
D10
D2
D11
D6
D7
D16
From PLL
CK0
CK1 - CK3
RCKE0
R/S0
R/S2
PLL
Terminated
D0-17
D0-4,9-13
D5-8,14-17
SERIAL PD
RDQM
RDQM
RDQM
RDQM
RDQM
RDQM
RDQM
RDQM
0
1
2
3
4
5
6
7
D0-1
D2-4
D5-6
D7-8
D9-10
D11-13
D14-15
D16-17
SCL
WP
47K
VDD
VSS
A0
A1
A2
SDA
SA0 SA1 SA2
D0 to D17
D0 to D17
MIT-DS-0329-0.0
MITSUBISHI
ELECTRIC
19/Jun/1999
3
MITSUBISHI LSIs
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
PIN FUNCTION
CK0
Input
Master Clock:All other inputs are referenced to the rising
edge of CK
Clock Enable:CKE controls internal clock.When CKE is
low,internal clock for the following cycle is ceased. CKE is
also used to select auto / self refresh. After self refresh
mode is started, CKE E becomes asynchronous input.Self
refresh is maintained as long as CKE is low.
Chip Select: When /S is high,any command means
No Operation.
Combination of /RAS,/CAS,/W defines basic commands.
A0-11 specify the Row/Column Address in conjunction with
BA.The Row Address is specified by A0-11.The Column
Address is specified by A0-9.A10 is also used to indicate
precharge option.When A10 is high at a read / write
command, an auto precharge is performed. When A10 is
high at a precharge command, both banks are precharged.
Bank Address:BA0,1 is not simply BA.BA0,1 specifies
the bank to which a command is applied.BA must be set
with ACT,PRE,READ,WRITE commands
CKE0
Input
/S0,2
/RAS,/CAS,/W
Input
Input
A0-11
Input
BA0-1
DQ0-63
CB0-7
DQM0-7
Input
Input/Output Data In and Data out are referenced to the rising edge
of CK
Input
Din Mask/Output Disable:When DQMB is high in burst
write.Din for the current cycle is masked.When DQMB is
high in burst read,Dout is disabled at the next but one cycle.
Vdd,Vs s
Power Supply Power Supply for the memory mounted module.
Register enable:When REGE is low,All control signals and
address are buffered. (Buffer mode) When REGE is
high,All control and address are latched. (Latch mode)
REGE
Output
MIT-DS-0329-0.0
MITSUBISHI
ELECTRIC
19/Jun/1999
4
MITSUBISHI LSIs
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
BASIC FUNCTIONS
The MH16S72BDFA provides basic functions,bank(row)activate,burst read / write,
bank(row)precharge,and auto / self refresh.
Each command is defined by control signals of /RAS,/CAS and /WE at CK rising edge. In
addition to 3 signals,/S,CKE and A10 are used as chip select,refresh option,and
precharge option,respectively.
To know the detailed definition of commands please see the command truth table.
CK
/S
/RAS
/CAS
/WE
CKE
A10
Chip Select : L=select, H=deselect
Command
Command
Command
Ref resh Option @ref resh command
Precharge Option @precharge or read/write command
def ine basic commands
Activate(ACT) [/RAS =L, /CAS = /WE =H]
ACT command activates a row in an idle bank indicated by BA.
Read(READ) [/RAS =H,/CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA.First output
data appears after /CAS latency. When A10 =H at this command,the bank is
deactivated after the burst read(auto-precharge,READA).
Write(WRITE) [/RAS =H, /CAS = /WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data
length to be written is set by burst length. When A10 =H at this command, the bank
is deactivated after the burst write(auto-precharge,WRITEA).
Precharge(PRE) [/RAS =L, /CAS =H,/WE =L]
PRE command deactivates the active bank indicated by BA. This command also
term inates burst read / write operation. When A10 =H at this command, both banks
are deactivated(precharge all,
PREA).
Auto-Refresh(REFA) [/RAS =/CAS =L, /WE =CKE =H]
PEFA command starts auto-refresh cycle. Refresh address including bank address
are generated internally. After this command, the banks are precharged automatically.
MIT-DS-0329-0.0
MITSUBISHI
ELECTRIC
19/Jun/1999
5
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