MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
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by MGS05N60D/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate
protection zener. Fast switching characteristics result in efficient
operation at higher frequencies.
Built–In Free Wheeling Diode
Built–In Gate Protection Zener Diode
Industry Standard Package (TO92 — 1.0 Watt)
High Speed Eoff: Typical 6.5
m
J @ IC = 0.3 A; TC = 125°C and
dV/dt = 1000 V/
m
s
•
Robust High Voltage Termination
•
Robust Turn–Off SOA
C
™
Data Sheet
MGS05N60D
POWERLUX
IGBT
0.5 A @ 25°C
600 V
•
•
•
•
E
C
G
G
E
CASE 029–05
TO–226AE
TO92 (1.0 WATT)
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Parameters
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Symbol
VCES
VCGR
VGES
IC25
IC90
ICM
PD
TJ, Tstg
Value
600
600
±
15
0.5
0.3
2.0
1.0
– 55 to 150
Unit
Vdc
Vdc
Vdc
Adc
Watt
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
R
θJC
R
θJA
TL
25
125
260
°C/W
°C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS
(TC
≤
150°C)
Single Pulse Drain–to–Source Avalanche
Energy – Starting @ TC = 25°C
Energy – Starting
@ TC = 125°C
VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25
W
(1) Pulse width is limited by maximum junction temperature repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
EAS
125
40
mJ
Designer’s is a trademark of Motorola, Inc.
©
Motorola Power
Motorola, Inc. 1997
Products Division Technical Data
1
MGS05N60D
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 250
µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc, TC = 25°C)
(VCE = 600 Vdc, VGE = 0 Vdc, TC = 125°C)
Gate–Body Leakage Current (VGE =
±
15 Vdc, VCE = 0 Vdc)
ON CHARACTERISTICS
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 0.3 Adc, TC = 25°C)
(VGE = 15 Vdc, IC = 0.3 Adc, TC = 125°C)
Gate Threshold Voltage
(VCE = VGE, IC = 250
m
Adc)
Threshold Temperature Coefficient (Negative)
Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 0.3 Adc, TC = 25°C)
(IEC = 0.3 Adc, TC = 125°C)
(IEC = 0.1 Adc, TC = 25°C)
(IEC = 0.1 Adc, TC = 125°C)
Reverse Recovery Time @ TC = 25°C
IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/
m
s
Reverse Recovery Stored Charge
IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/
m
s
SWITCHING CHARACTERISTICS (1)
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Gate Charge
(VCC = 300 Vdc, IC = 0.4 Adc,
VGE = 15 Vd L = 3 0 mH, RG = 25
Ω
Vdc,
3.0 H
Ω,
TC = 25 C, dV/dt = 1000 V/
m
s)
25°C,
Energy losses include “tail”
(VCC = 300 Vdc, IC = 0.4 Adc,
VGE = 15 Vd L = 3 0 mH, RG = 25
Ω
Vdc,
3.0 H
Ω,
TC = 125°C, dV/dt = 1000 V/
m
s)
125 C,
Energy losses include “tail”
(VCC = 300 Vdc, IC = 0.3 Adc,
VGE = 15 Vdc)
td(off)
tf
Eoff
td(off)
tf
Eoff
QT
—
—
—
—
—
—
—
28
150
3.25
21
280
8.0
6.4
—
—
4.25
—
—
10
—
ns
VFEC
—
—
—
—
trr
—
QRR
—
35
—
150
—
5.0
5.2
2.3
2.3
6.0
—
3.0
—
ns
Vdc
(VCE = 20 Vdc, VGE = 0 Vdc,
Vdc
Vdc
f = 1.0 MHz)
Cies
Coes
Cres
—
—
—
75
11
1.6
100
20
5.0
pF
VCE(on)
—
—
VGE(th)
3.5
—
gfe
0.3
—
6.0
0.42
6.0
—
—
1.6
1.5
2.0
—
Vdc
mV/°C
Mhos
Vdc
BVCES
600
—
ICES
ICES
IGES
—
—
—
680
0.7
0.1
5.0
10
—
—
5.0
50
100
Vdc
V/°C
µAdc
Symbol
Min
Typ
Max
Unit
m
Adc
m
C
m
J
ns
m
J
nC
(1) Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
2
Motorola Power Products Division Technical Data
MGS05N60D
2.5
ICE, COLLECTOR–EMITTER CURRENT (A)
TC = 25°C
2.0
VGE = 15 V
IC , COLLECTOR–EMITTER CURRENT (A)
12.5 V
10 V
2.5
TC = 150°C
2.0
VGE = 15 V
12.5 V
10 V
1.5
8.0 V
1.0
1.5
8.0 V
1.0
0.5
0
1.0
2.0
3.0
4.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
0.5
0
0
1.0
2.0
3.0
4.0
5.0
6.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Saturation Characteristics
Figure 2. Saturation Characteristics
IC , COLLECTOR–EMITTER CURRENT (A)
TC = –20°C
2.0
VGE = 15 V
12.5 V
10 V
VCE , COLLECTOR–TO–EMITTER VOLTAGE (V)
2.5
2.0
IC = 700 m
1.9
1.8
1.7
1.6
1.5
VG = 15 V
1.4
–25
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
IC = 500 mA
IC = 300 mA
1.5
8.0 V
1.0
0.5
0
1.0
2.0
3.0
4.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 3. Saturation Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Case Temperature
V FEC , EMITTER–TO–COLLECTOR VOLTAGE (V)
TC = 150°C
–20°C
17
25°C
12
V FEC , COLLECTOR–TO–EMITTER VOLTAGE (V)
22
10
IC = 500 m
8.0
IC = 300 mA
6.0
4.0
IC = 100 mA
2.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
7.0
2.0
0
0.5
1.0
1.5
2.0
IF, COLLECTOR CURRENT (AMPS)
Figure 5. Diode Forward Voltage
Figure 6. Diode Forward Voltage versus Case
Temperature
Motorola Power Products Division Technical Data
3
MGS05N60D
150
VGE, GATE–TO–EMITTER VOLTAGE (V)
TC = 25°C
15
C, CAPACITANCE (pF)
100
Cies
10
Coes
50
Cres
5.0
VCE = 300 V
VGE = 15 V
IC = 0.3 A
TC = 25°C
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0
0
5.0
10
15
20
25
COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
0
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate–To–Emitter Voltage versus
Total Charge
Eoff , TOTAL SWITCHING ENERGY LOSSES (
m
J)
Eoff , TOTAL SWITCHING ENERGY LOSSES (
m
J)
60
50
40
30
20
25°C
10
0
0
0.5
1.0
1.5
2.0
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
L = 3.0 mH
VCC = 300 V
VGE = 15 V
RG = 25
W
dV/dt = 1.0 kV/
m
s
20
L = 3.0 mH
VCC = 300 V
VGE = 15 V
RG = 25
W
dV/dt = 1.0 kV/
m
s
0.7 A
15
125°C
10
0.3 A
5.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 9. Total Switching Losses versus
Collector–To–Emitter Current
Figure 10. Total Switching Losses versus
Case Temperature
2.5
ICE, COLLECTOR–EMITTER CURRENT (A)
2.0
1.5
1.0
TC = 125°C
VGE = 15 V
RG = 25
W
L = 3.0 mH
0
100
200
300
400
500
600
0.5
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 11. Minimum Turn–Off
Safe Operating Area
4
Motorola Power Products Division Technical Data
MGS05N60D
1.0
D = 0.5
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
t, TIME (ms)
1.0E+00
1.0E+01
1.0E+02
1.0E+03
t2
DUTY CYCLE, D = t1/t2
t1
P(pk)
R
θJC
(t) = r(t) R
θJC
R
θJC
= 25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC
(t)
(R
q
JC(t))
Figure 12. Typical Thermal Response
Motorola Power Products Division Technical Data
5
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