Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Gate Charge
(VCC = 720 Vdc IC = 20 Adc
Vdc,
Adc,
VGE = 15 Vdc)
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
(1) Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
LE
—
13
—
nH
(VCC = 720 Vd IC = 20 Ad
Vdc,
Adc,
VGE = 15 Vdc, L = 300
m
H
Vd
RG = 20
Ω,
TJ = 125°C)
125 C)
Energy losses include “tail”
(VCC = 720 Vd IC = 20 Ad
Vdc,
Adc,
VGE = 15 Vdc, L = 300
m
H
Vd
RG = 20
Ω)
Energy losses include “tail”
td(on)
tr
td(off)
tf
Eoff
td(on)
tr
td(off)
tf
Eoff
QT
Q1
Q2
—
—
—
—
—
—
—
—
—
—
—
—
—
88
103
190
284
1.65
83
107
216
494
3.19
62
21
25
—
—
—
—
2.75
—
—
—
—
—
—
—
—
mJ
nC
mJ
ns
ns
(VCE = 25 Vdc, VGE = 0 Vdc,
Vdc
Vdc
f = 1.0 MHz)
Cies
Coes
Cres
—
—
—
1860
122
29
—
—
—
pF
VCE(on)
—
—
—
VGE(th)
4.0
—
gfe
—
6.0
10
12
8.0
—
—
2.42
2.36
2.90
3.54
—
4.99
Vdc
mV/°C
Mhos
Vdc
V(BR)CES
1200
—
V(BR)ECS
ICES
—
—
IGES
—
—
—
—
100
2500
250
nAdc
25
—
870
—
—
—
—
Vdc
mV/°C
Vdc
µAdc
Symbol
Min
Typ
Max
Unit
2
Motorola IGBT Device Data
MGW20N120
TYPICAL ELECTRICAL CHARACTERISTICS
60
TJ = 25°C
IC, COLLECTOR CURRENT (AMPS)
50
40
12.5 V
30
20
10
0
10 V
VGE = 20 V
17.5 V
60
IC, COLLECTOR CURRENT (AMPS)
15 V
TJ = 125°C
50
40
12.5 V
30
20
10
0
10 V
VGE = 20 V
17.5 V
15 V
0
2
4
6
8
0
2
4
6
8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
60
IC, COLLECTOR CURRENT (AMPS)
VCE = 10 V
250
µs
PULSE WIDTH
VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
4
Figure 2. Output Characteristics
VGE = 15 V
250
µs
PULSE WIDTH
IC = 20 A
3
15 A
10 A
2
40
20
TJ = 125°C
25°C
0
5
6
7
8
9
10
11
12
13
14
15
1
– 50
0
50
100
150
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
16
QT
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
TJ = 25°C
IC = 20 A
Q1
Q2
10,000
Cies
C, CAPACITANCE (pF)
1000
Coes
100
Cres
TJ = 25°C
VGE = 0 V
10
0
5
10
15
20
25
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE (nC)
Figure 5. Capacitance Variation
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
Motorola IGBT Device Data
3
MGW20N120
100
IC, COLLECTOR CURRENT (AMPS)
10
1
VGE = 15 V
RGE = 20
Ω
TJ = 125°C
1
10
100
1000
10,000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
0.1
Figure 7. Reverse Biased
Safe Operating Area
1.0
D = 0.5
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
t, TIME (s)
1.0E–01
t1
P(pk)
R
θJC
(t) = r(t) R
θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC
(t)
1.0E+00
1.0E+01
Figure 8. Thermal Response
4
Motorola IGBT Device Data
MGW20N120
PACKAGE DIMENSIONS
0.25 (0.010)
M
–Q–
T B
M
–T–
E
–B–
U
L
R
1
2
3
C
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
MIN
MAX
19.7
20.3
15.3
15.9
4.7
5.3
1.0
1.4
1.27 REF
2.0
2.4
5.5 BSC
2.2
2.6
0.4
0.8
14.2
14.8
5.5 NOM
3.7
4.3
3.55
3.65
5.0 NOM
5.5 BSC
3.0
3.4
INCHES
MIN
MAX
0.776
0.799
0.602
0.626
0.185
0.209
0.039
0.055
0.050 REF
0.079
0.094
0.216 BSC
0.087
0.102
0.016
0.031
0.559
0.583
0.217 NOM
0.146
0.169
0.140
0.144
0.197 NOM
0.217 BSC
0.118
0.134
A
K
P
–Y–
V
F
D
0.25 (0.010)
M
H
J
G
DIM
A
B
C
D
E
F
G
H
J
K
L
P
Q
R
U
V
Y Q
S
CASE 340K–01
TO–247AE
ISSUE A
STYLE 4:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
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