电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MGW20N120

产品描述Insulated Gate Bipolar Transistor
产品类别分立半导体    晶体管   
文件大小104KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 全文预览

MGW20N120概述

Insulated Gate Bipolar Transistor

MGW20N120规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称ON Semiconductor(安森美)
零件包装代码TO-247AE
包装说明FLANGE MOUNT, R-PSFM-T3
针数3
制造商包装代码CASE 340K-01
Reach Compliance Code_compli
其他特性HIGH SPEED
外壳连接COLLECTOR
最大集电极电流 (IC)28 A
集电极-发射极最大电压1200 V
配置SINGLE
门极发射器阈值电压最大值8 V
门极-发射极最大电压20 V
JEDEC-95代码TO-247AE
JESD-30 代码R-PSFM-T3
JESD-609代码e0
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)174 W
认证状态Not Qualified
表面贴装NO
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用MOTOR CONTROL
晶体管元件材料SILICON
标称断开时间 (toff)710 ns
标称接通时间 (ton)190 ns

文档预览

下载PDF文档
MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MGW20N120/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time. Fast switching characteristics result in efficient
operation at high frequencies.
Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
High Speed Eoff: 160
m
J/A typical at 125°C
High Short Circuit Capability – 10
m
s minimum
Robust High Voltage Termination
C
Data Sheet
MGW20N120
Motorola Preferred Device
IGBT IN TO–247
20 A @ 90°C
28 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
G
G
E
C
E
CASE 340K–01
STYLE 4
TO–247AE
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20
Ω)
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Symbol
VCES
VCGR
VGE
IC25
IC90
ICM
PD
TJ, Tstg
tsc
R
θJC
R
θJA
TL
Value
1200
1200
±20
28
20
56
174
1.39
– 55 to 150
10
0.7
35
260
10 lbf
S
in (1.13 N
S
m)
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
m
s
°C/W
°C
Designer’s is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
©
Motorola IGBT Device
Motorola, Inc. 1997
Data
1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1981  642  1134  2923  1061  11  18  46  19  49 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved