MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MGY20N120D/D
™
Data Sheet
Insulated Gate Bipolar Transistor
with Anti-Parallel Diode
Designer's
MGY20N120D
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage blocking capability. Short circuit rated IGBT’s are specifical-
ly suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
•
•
•
•
•
•
Industry Standard High Power TO–264 Package (TO–3PBL)
High Speed Eoff: 160
m
J per Amp typical at 125°C
High Short Circuit Capability – 10
m
s minimum
Soft Recovery Free Wheeling Diode is included in the package
Robust High Voltage Termination
Robust RBSOA
IGBT & DIODE IN TO–264
20 A @ 90°C
28 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
C
G
C
E
G
E
CASE 340G–02
STYLE 5
TO–264
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20
Ω)
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Symbol
VCES
VCGR
VGE
IC25
IC90
ICM
PD
TJ, Tstg
tsc
R
θJC
R
θJC
R
θJA
TL
Value
1200
1200
±20
28
20
56
174
1.39
– 55 to 150
10
0.7
1.1
35
260
10 lbf
S
in (1.13 N
S
m)
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
m
s
°C/W
°C
Designer’s is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
©
Motorola IGBT Device
Motorola, Inc. 1997
Data
1
MGY20N120D
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25
µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current
(VCE = 1200 Vdc, VGE = 0 Vdc)
(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGE =
±
20 Vdc, VCE = 0 Vdc)
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 10 Adc)
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 20 Adc)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Gate Charge
(VCC = 720 Vdc IC = 20 Adc
Vdc,
Adc,
VGE = 15 Vdc)
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 10 Adc)
(IEC = 10 Adc, TJ = 125°C)
(IEC = 20 Adc)
(1) Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
VFEC
—
—
—
2.92
1.73
3.67
3.59
—
4.57
(continued)
Vdc
(VCC = 720 Vd IC = 20 Ad
Vdc,
Adc,
VGE = 15 Vdc, L = 300
m
H
Vd
RG = 20
Ω,
TJ = 125°C)
125 C)
Energy losses include “tail”
(VCC = 720 Vd IC = 20 Ad
Vdc,
Adc,
VGE = 15 Vdc, L = 300
m
H
Vd
RG = 20
Ω)
Energy losses include “tail”
td(on)
tr
td(off)
tf
Eoff
Eon
Ets
td(on)
tr
td(off)
tf
Eoff
Eon
Ets
QT
Q1
Q2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
88
103
190
284
1.65
2.42
4.07
83
107
216
494
3.19
4.26
7.45
63
20
27
—
—
—
—
2.75
3.75
6.50
—
—
—
—
—
—
—
—
—
—
nC
mJ
ns
mJ
ns
(VCE = 25 Vdc, VGE = 0 Vdc,
Vdc
Vdc
f = 1.0 MHz)
Cies
Coes
Cres
—
—
—
1876
208
31
—
—
—
pF
VCE(on)
—
—
—
VGE(th)
4.0
—
gfe
—
6.0
10
12
8.0
—
—
2.42
2.36
2.90
3.54
—
4.99
Vdc
mV/°C
Mhos
Vdc
V(BR)CES
1200
—
ICES
—
—
IGES
—
—
—
—
100
2500
250
nAdc
—
870
—
—
Vdc
mV/°C
µAdc
Symbol
Min
Typ
Max
Unit
2
Motorola IGBT Device Data
MGY20N120D
ELECTRICAL CHARACTERISTICS — continued
(TJ = 25°C unless otherwise noted)
Characteristic
DIODE CHARACTERISTICS — continued
Reverse Recovery Time
(
(IF = 20 Adc, VR = 720 Vd ,
Ad ,
Vdc,
dIF/dt = 150 A/µs)
Reverse Recovery Stored Charge
Reverse Recovery Time
(
(IF = 20 Adc, VR = 720 Vd ,
Ad ,
Vdc,
dIF/dt = 150 A/µs, TJ = 125°C)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
LE
—
13
—
nH
trr
ta
tb
QRR
trr
ta
tb
QRR
—
—
—
—
—
—
—
—
114
74
40
0.68
224
149
75
2.40
—
—
—
—
—
—
—
—
µC
µC
ns
ns
Symbol
Min
Typ
Max
Unit
TYPICAL ELECTRICAL CHARACTERISTICS
60
TJ = 25°C
IC, COLLECTOR CURRENT (AMPS)
50
40
12.5 V
30
20
10
0
10 V
VGE = 20 V
17.5 V
60
IC, COLLECTOR CURRENT (AMPS)
15 V
TJ = 125°C
50
40
12.5 V
30
20
10
0
10 V
VGE = 20 V
17.5 V
15 V
0
2
4
6
8
0
2
4
6
8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
60
IC, COLLECTOR CURRENT (AMPS)
VCE = 10 V
250
µs
PULSE WIDTH
4
Figure 2. Output Characteristics
VGE = 15 V
250
µs
PULSE WIDTH
IC = 20 A
3
15 A
10 A
2
40
20
TJ = 125°C
25°C
0
5
6
7
8
9
10
11
12
13
14
15
1
– 50
0
50
100
150
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
Motorola IGBT Device Data
3
MGY20N120D
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
10000
Cies
C, CAPACITANCE (pF)
1000
Coes
100
Cres
TJ = 25°C
VGE = 0 V
16
QT
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
TJ = 25°C
IC = 20 A
Q1
Q2
10
0
5
10
15
20
25
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE (nC)
Figure 5. Capacitance Variation
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
6
Eon , TURN–ON ENERGY LOSSES (mJ)
5
4
3
IC = 20 A
Eon , TURN–ON ENERGY LOSSES (mJ)
VCC = 720 V
VGE = 15 V
TJ = 25°C
5
4
VCC = 720 V
VGE = 15 V
RG = 20
Ω
IC = 20 A
15 A
3
15 A
10 A
2
1
0
10
15
20
25
30
35
40
45
50
RG, GATE RESISTANCE (OHMS)
2
10 A
1
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 7. Turn–On Losses versus
Gate Resistance
Figure 8. Turn–On Losses versus
Case Temperature
5
Eon , TURN–ON ENERGY LOSSES (mJ)
VCC = 720 V
VGE = 15 V
RG = 20
Ω
TJ = 125°C
4
3
2
1
10
12
14
16
18
20
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Turn–On Losses versus
Collector Current
4
Motorola IGBT Device Data
MGY20N120D
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
40
IC, COLLECTOR CURRENT (AMPS)
100
30
TJ = 125°C
20
25°C
10
10
1
VGE = 15 V
RGE = 20
Ω
TJ = 125°C
1
10
100
1000
10,000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
0
0.1
0
1
2
3
4
5
VFEC, EMITTER–TO–COLLECTOR VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage Drop
Figure 11. Reverse Biased
Safe Operating Area
1.0
D = 0.5
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
t, TIME (s)
1.0E–01
t1
P(pk)
R
θJC
(t) = r(t) R
θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC
(t)
1.0E+00
1.0E+01
Figure 12. Thermal Response
Motorola IGBT Device Data
5
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