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Preliminary Spec.

Some contents are subject to change without notice.

MITSUBISHI LSIs

MH16S72AMA -8,-10,-12

1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM

DESCRIPTION

The MH16S72AMA is 16777216 - word by 72-bit

Synchronous DRAM module. This consists of

eighteen industry standard 16Mx4 Synchronous

DRAMs in TSOP and one industory standard

EEPROM in TSSOP.

The mounting of TSOP on a card edge Dual Inline

package provides any application where high

densities and large quantities of memory are

required.

This is a socket type - memory modules, suitable for

easy interchange or addition of modules.

85pin

1pin

94pin

95pin

10pin

11pin

FEATURES

Frequency

-8

-10

-12

125MHz

100MHz

83MHz

CLK Access Time

(Component SDRAM)

6ns(CL=3)

8ns(CL=3)

Back side

8ns(CL=3)

Front side

Utilizes industry standard 16M x 4 Synchronous DRAMs

TSOP and industry standard EEPROM in TSSOP

168-pin (84-pin dual in-line package)

124pin

125pin

40pin

41pin

single 3.3V±0.3V power supply

Clock frequency 125MHz/100MHz/83MHz

Fully synchronous operation referenced to clock rising

edge

Dual bank operation controlled by BA0,1(Bank Address)

/CAS latency- 2/3(programmable)

Burst length- 1/2/4/8(programmable)

Burst type- sequential / interleave(programmable)

Column access - random

Auto precharge / All bank precharge controlled by A10

Auto refresh and Self refresh

4096 refresh cycle /64ms

LVTTL Interface

168pin

84pin

APPLICATION

main memory or graphic memory in computer systems

MIT-DS-0128-0.0

MITSUBISHI

ELECTRIC

( 1 / 52 )

5. Mar.1997

Preliminary Spec.

Some contents are subject to change without notice.

MITSUBISHI LSIs

MH16S72AMA -8,-10,-12

1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM

PIN NO.

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40

41

42

PIN NAME

VSS

DQ0

DQ1

DQ2

DQ3

VDD

DQ4

DQ5

DQ6

DQ7

DQ8

VSS

DQ9

DQ10

DQ11

DQ12

DQ13

VDD

DQ14

DQ15

CB0

CB1

VSS

NC

VDD

/WE0

DQMB0

DQMB1

/S0

NC

VSS

A0

A2

A4

A6

A8

A10

BA1

VDD

CK0

PIN NO.

43

44

45

46

47

48

49

50

51

52

53

54

55

56

57

58

59

60

61

62

63

64

65

66

67

68

69

70

71

72

73

74

75

76

77

78

79

80

81

82

83

84

PIN NAME

VSS

NC

/S2

DQMB2

DQMB3

NC

VDD

NC

CB2

CB3

VSS

DQ16

DQ17

DQ18

DQ19

VDD

DQ20

NC

VSS

DQ21

DQ22

DQ23

VSS

DQ24

DQ25

DQ26

DQ27

VDD

DQ28

DQ29

DQ30

DQ31

VSS

CK2

NC

SDA

SCL

VDD

PIN NO.

85

86

87

88

89

90

91

92

93

94

95

96

97

98

99

100

101

102

103

104

105

106

107

108

109

110

111

112

113

114

115

116

117

118

119

120

121

122

123

124

125

126

PIN NAME

VSS

DQ32

DQ33

DQ34

DQ35

VDD

DQ36

DQ37

DQ38

DQ39

DQ40

VSS

DQ41

DQ42

DQ43

DQ44

DQ45

VDD

DQ46

DQ47

CB4

CB5

VSS

NC

VDD

/CAS

DQMB4

DQMB5

NC

/RAS

VSS

A1

A3

A5

A7

A9

BA0

A11

VDD

CK1

NC

PIN NO.

127

128

129

130

131

132

133

134

135

136

137

138

139

140

141

142

143

144

145

146

147

148

149

150

151

152

153

154

155

156

157

158

159

160

161

162

163

164

165

166

167

168

PIN NAME

VSS

CKE0

NC

DQMB6

DQMB7

NC

VDD

NC

CB6

CB7

VSS

DQ48

DQ49

DQ50

DQ51

VDD

DQ52

NC

VSS

DQ53

DQ54

DQ55

VSS

DQ56

DQ57

DQ58

DQ59

VDD

DQ60

DQ61

DQ62

DQ63

VSS

CK3

NC

SA0

SA1

SA2

VDD

NC = No Connection

MIT-DS-0128-0.0

MITSUBISHI

ELECTRIC

( 2 / 52 )

5. Mar.1997

Preliminary Spec.

Some contents are subject to change without notice.

MITSUBISHI LSIs

MH16S72AMA -8,-10,-12

1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM

Block Diagram

/S0

DQMB0

DQM /CS

DQMB4

DQM /CS

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQMB1

DQ8

DQ9

DQ10

DQ11

DQ12

DQ13

DQ14

DQ15

CB0

CB1

CB2

CB3

I/O 0

I/O 1 D0

I/O 2

I/O 3

DQM /CS

DQ32

DQ33

DQ34

DQ35

DQ36

DQ37

DQ38

DQ39

DQMB5

DQ40

DQ41

DQ42

DQ43

DQ44

DQ45

DQ46

DQ47

CB4

CB5

CB6

CB7

I/O 0

I/O 1

I/O 2

I/O 3

DQM /CS

D9

I/O 0

I/O 1 D1

I/O 2

I/O 3

DQM /CS

I/O 0

I/O 1

I/O 2

I/O 3

DQM /CS

D10

I/O 0

I/O 1 D2

I/O 2

I/O 3

DQM /CS

I/O 0

I/O 1 D11

I/O 2

I/O 3

DQM /CS

I/O 0

I/O 1 D3

I/O 2

I/O 3

DQM /CS

I/O 0

I/O 1 D12

I/O 2

I/O 3

DQM /CS

I/O 0

I/O 1 D4

I/O 2

I/O 3

I/O 0

I/O 1 D13

I/O 2

I/O 3

/S2

DQMB2

DQM /CS

DQMB6

DQM /CS

DQ16

DQ17

DQ18

DQ19

DQ20

DQ21

DQ22

DQ23

DQMB3

DQ24

DQ25

DQ26

DQ27

DQ28

DQ29

DQ30

DQ31

I/O 0

I/O 1

I/O 2

I/O 3

DQM /CS

D5

D0

DQ48

DQ49

DQ50

DQ51

DQ52

DQ53

DQ54

DQ55

DQMB7

DQ56

DQ57

DQ58

DQ59

DQ60

DQ61

DQ62

DQ63

CKE0

3.3V

D9 - D17 SCL

D0 - D8

I/O 0

I/O 1 D14

I/O 2

I/O 3

DQM /CS

I/O 0

I/O 1

I/O 2

I/O 3

DQM /CS

D6

D0

I/O 0

I/O 1 D15

I/O 2

I/O 3

DQM /CS

I/O 0

I/O 1

I/O 2

I/O 3

DQM /CS

D7

D0

I/O 0

I/O 1 D16

I/O 2

I/O 3

DQM /CS

I/O 0

I/O 1

I/O 2

I/O 3

D8

D0

I/O 0

I/O 1 D17

I/O 2

I/O 3

CK0

CK1

CK2

CK3

SERIAL PD

A0 A1 A2

SA0 SA1 SA2

SDA

5SDRAMs

4SDRAMs

/RAS

/CAS

/WE

BA0,BA1,A<11:0>

Vcc

CK,DQ=10Ω

D0 - D17

D0 - D17 CKE1

D0 - D17

Vss

MIT-DS-0128-0.0

MITSUBISHI

ELECTRIC

( 3 / 52 )

5. Mar.1997

Preliminary Spec.

Some contents are subject to change without notice.

MITSUBISHI LSIs

MH16S72AMA -8,-10,-12

1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM

Serial Presence Detect Table I

Byte

0

1

2

3

4

5

6

7

8

9

Function described

Defines # bytes written into serial memory at module mfgr

Total # bytes of SPD memory device

Fundamental memory type

# Row Addresses on this assembly

# Column Addresses on this assembly

# Module Banks on this assembly

Data Width of this assembly...

... Data Width continuation

Voltage interface standard of this assembly

SDRAM Cycletime at Max. Supported CAS Latency (CL). -8

Cycle time for CL=3

10

SDRAM Access from Clock

tAC for CL=3

11

12

13

14

15

16

17

18

19

20

21

22

23

DIMM Configuration type (Non-parity,Parity,ECC)

Refresh Rate/Type

SDRAM width,Primary DRAM

Error Checking SDRAM data width

Minimum Clock Delay,Back to Back Random Column Addresses

SPD enrty data

128

256 Bytes

SDRAM

A0-A11

A0-A9

1BANK

x72

0

LVTTL

8ns

10ns

12ns

6ns

8ns

ECC

SPD DATA(hex)

80

08

04

0C

0A

01

48

00

01

80

A0

C0

60

80

02

80

04

01

0F

04

06

01

00

06

D0

E0

F0

70

80

90

00

18

1E

10

14

18

-10

-12

-8

-10

-12

self refresh(15.625uS)

x4

1

1/2/4/8

4bank

CL=2/3

0

non-buffered,non-registered

Precharge All,Auto precharge

Burst Lengths Supported

# Banks on Each SDRAM device

CAS# Latency

CS# Latency

Write Latency

SDRAM Module Attributes

SDRAM Device Attributes:General

SDRAM Cycle time(2nd highest CAS latency)

Cycle time for CL=2

-8

-10

-12

-8

-10

-12

-8

-10

-12

-8

-10

-12

-8

-10

-12

13ns

14ns

15ns

7ns

8ns

9ns

N/A

24ns

30ns

16ns

20ns

24ns

24

SDRAM Access form Clock(2nd highest CAS latency)

tAC for CL=2

25

SDRAM Cycle time(3rd highest CAS latency)

Cycle time for CL=

26

SDRAM Access form Clock(3rd highest CAS latency)

tAC for CL=

27

Precharge to Active Minimum

28

Row Active to Row Active Min.

-8

-10

-12

MIT-DS-0128-0.0

MITSUBISHI

ELECTRIC

( 4 / 52 )

5. Mar.1997

Preliminary Spec.

Some contents are subject to change without notice.

MITSUBISHI LSIs

MH16S72AMA -8,-10,-12

1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM

Serial Presence Detect Table I i

29

RAS to CAS Delay Min

-8

-10

-12

30

Active to Precharge Min

-8

-10

-12

31

32-61

62

63

Density of each bank on module

Superset Information (may be used in future)

SPD Revision

Checksum for bytes 0-62

24ns

30ns

56ns

60ns

70ns

128MByte

option

rev 1

Check sum for -8

Check sum for -10

Check sum for -12

64-71

72

Manufactures Jedec ID code per JEP-108E

Manufacturing location

MITSUBISHI

Miyoshi,Japan

Tajima,Japan

NC,USA

Germany

73-90

Manufactures Part Number

MH16S72AMA-8

MH16S72AMA-10

MH16S72AMA-12

91-92

93-94

95-98

99-125

126

127

128+

Revision Code

Manufacturing date

Assembly Serial Number

Manufacture Specific Data

Intetl specification frequency

Intel specification CAS# Latency support

Unused storage locations

PCB revision

year/week code

serial number

option

66MHz

CL=3: 04H, CL=2/3: 06H

open

18

1E

38

3C

46

20

00

01

51

C5

13

1CFFFFFFFFFFFFFF

01

02

03

04

4D483136533732414D412D382D38202020202020

4D483136533732414D412D313031302020202020

4D483136533732414D412D313231322020202020

rrrr

yyww

ssssssss

00

66

06

00

MIT-DS-0128-0.0

MITSUBISHI

ELECTRIC

( 5 / 52 )

5. Mar.1997

MH16S72AMA-10

MH16S72AMA-10概述

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