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SIT8103AI-22-33E-4800000Y

产品描述Standard Clock Oscillators 48MHz +/-25ppm 3.3Volt -40C + 85C
产品类别无源元件   
文件大小162KB,共4页
制造商SiTime
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SIT8103AI-22-33E-4800000Y概述

Standard Clock Oscillators 48MHz +/-25ppm 3.3Volt -40C + 85C

SIT8103AI-22-33E-4800000Y规格参数

参数名称属性值
产品种类
Product Category
Standard Clock Oscillators
制造商
Manufacturer
SiTime
RoHSDetails
产品
Product
MEMS Oscillators
频率
Frequency
48 MHz
频率稳定性
Frequency Stability
25 PPM
负载电容
Load Capacitance
15 pF
工作电源电压
Operating Supply Voltage
3.3 V
端接类型
Termination Style
SMD/SMT
封装 / 箱体
Package / Case
3.2 mm x 2.5 mm
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 85 C
长度
Length
3.2 mm
宽度
Width
2.5 mm
高度
Height
0.75 mm
系列
Packaging
Reel
工厂包装数量
Factory Pack Quantity
1000

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SiT8103
High Performance 1-110 MHz Oscillator
Features, Benefits and Applications
MEMS oscillator with LVCMOS/LVTTL compatible output
1-110 MHz frequency range
Frequency stability as low as ±20 PPM
Typical current consumption of 6.1 mA in active mode
Standby or output enable modes
1.8V, 2.5V - 3.3V supply voltage
SoftEdge
TM
configurable rise/fall time for driving higher loads or EMI reduction.
Four industry-standard packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm
All-silicon device with outstanding reliability of 2 FIT, 10x improvement over quartz-based devices
Ultra short lead time
Ideal for consumer electronics: video, set top boxes, HDTV, DVR, scanners, printers, IP camera, etc.
Ideal for high-speed serial protocols: Ethernet, USB, SATA, SAS, Fibre Channel, Firewire, PCI Express
Specifications
Electrical Characteristics
[1]
Parameter
Output Frequency Range
Frequency Stability
Symbol
f
F_stab
Min.
1
-20
-25
-30
-50
Aging
Operating Temperature Range
Supply Voltage
Ag
T_use
Vdd
-1.0
-20
-40
1.71
2.25
2.52
2.97
45
40
90%
70%
Typ.
1.8
2.5
2.8
3.3
6.7
6.1
2.4
1.2
0.4
50
50
1
1.3
1.9
2.3
2.9
3.4
3.0
0.6
0.8
Max.
110
+20
+25
+30
+50
1.0
+70
+85
1.89
2.75
3.08
3.63
7.5
6.7
4.3
2.2
0.8
55
60
2
2.5
2.6
3.3
3.9
4.6
10%
30%
10
4
4.0
6.5
Unit
MHz
PPM
PPM
PPM
PPM
PPM
°C
°C
V
V
V
V
mA
mA
μA
μA
μA
%
%
ns
ns
ns
ns
ns
ns
Vdd
Vdd
Vdd
Vdd
ms
ms
ps
ps
ps
ps
Condition
Inclusive of: Initial stability, operating temperature, rated power,
supply voltage change, load change, shock and vibration.
± 20 PPM available in extended commercial
temperature only
1st year at 25°C
Extended Commercial
Industrial
Any voltage between 2.5V and 3.3V is supported with 1 decimal
point resolution.
Current Consumption
Standby Current
Idd
I_std
Duty Cycle
Rise/Fall Time
DC
Tr, Tf
Output Voltage High
Output Voltage Low
Input Voltage High
Input Voltage Low
Startup Time
Resume Time
RMS Period Jitter
RMS Phase Jitter (random)
VOH
VOL
VIH
VIL
T_start
T_resume
T_jitt
T_phj
No load condition, f = 20 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V
No load condition, f = 20 MHz, Vdd = 1.8 V
ST = GND, Vdd = 3.3 V, Output is Weakly Pulled Down
ST = GND, Vdd = 2.5 or 2.8 V, Output is Weakly Pulled Down
ST = GND, Vdd = 1.8 V, Output is Weakly Pulled Down
All Vdds. f <= 75 MHz
All Vdds. f > 75 MHz
15pF load, 20% - 80% Vdd=2.5V, 2.8V or 3.3V
15pF load, 20% - 80% Vdd=1.8V
30pF load, 20% - 80% Vdd=2.5V, 2.8V or 3.3V
30pF load, 20% - 80% Vdd=1.8V
45pF load, 20% - 80% Vdd=2.5V, 2.8V or 3.3V
45pF load, 20% - 80% Vdd=1.8V
IOH = -4 mA (Vdd = 3.3 V)
IOH = -3 mA (Vdd = 2.8 V and Vdd = 2.5 V)
IOH = -2 mA (Vdd = 1.8 V)
Pin 1, OE or ST
Pin 1, OE or ST
Measured from the time Vdd reaches its rated minimum value
Measured from the time ST pin crosses 50% threshold
f = 75 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V
f = 75 MHz, Vdd = 1.8 V
f = 75 MHz @ BW: 900 kHz to 7.5 MHz, VDD = 2.5 V to 3.3 V
f = 75 MHz @ BW: 900 kHz to 7.5 MHz, VDD = 1.8 V
Note:
1. All electrical specifications in the above table are measured with 15pF output load, unless stated otherwise in the Condition. For more information about SoftEdge
TM
rise/fall time for driving higher output load or reducing EMI, download http://www.sitime.com/support2/documents/AN10022-rise-and-fall-time-rev1.1.pdf.
SiTime Corporation
Rev. 1.46
990 Almanor Avenue
Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised August 11, 2011
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