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MH8V644AWZJ-6

产品描述FAST PAGE MODE 536870912 - BIT ( 8388608 - WORD BY 64 - BIT ) DYNAMIC RAM
产品类别存储    存储   
文件大小119KB,共20页
制造商Mitsubishi(日本三菱)
官网地址http://www.mitsubishielectric.com/semiconductors/
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MH8V644AWZJ-6概述

FAST PAGE MODE 536870912 - BIT ( 8388608 - WORD BY 64 - BIT ) DYNAMIC RAM

MH8V644AWZJ-6规格参数

参数名称属性值
厂商名称Mitsubishi(日本三菱)
包装说明,
Reach Compliance Codeunknow
ECCN代码EAR99
最长访问时间60 ns
JESD-30 代码R-XDMA-N168
内存密度536870912 bi
内存集成电路类型DRAM MODULE
内存宽度64
功能数量1
端口数量1
端子数量168
字数8388608 words
字数代码8000000
工作模式ASYNCHRONOUS
组织8MX64
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
认证状态Not Qualified
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装NO
技术CMOS
端子形式NO LEAD
端子位置DUAL

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Preliminary Spec.
Specifications subject to
change without notice.
MITSUBISHI LSIs
MH8V644AWZJ -5, -6
FAST PAGE MODE 536870912 - BIT ( 8388608 - WORD BY 64 - BIT ) DYNAMIC RAM
PIN CONFIGURATION
DESCRIPTION
The MH8V644AWZJ is 8388608-word x 64-bit dynamic
ram module. This consist of eight industry standard 8M x
8 dynamic RAMs in SOJ and one industry standard
EEPROM is TSSOP.
The mounting of SOJs and TSSOP on a card edge dual
in-line package provides any application where high
densities and large of quantities memory are required.
This is a socket-type memory module ,suitable for easy
interchange or addition of module.
85pin
94pin
95pin
1pin
10pin
11pin
FEATURES
Type name
MH8V644AWZJ-5
MH8V644AWZJ-6
/RAS
/CAS Address /OE
access access access access
time
time
time
time
Cycle
time
Power
dissipation
(typ.W)
(max.ns) (max.ns) (max.ns) (max.ns) (min.ns)
50
60
13
15
25
30
13
15
90
110
3.12
2.60
Utilizes industry standard 8M x 8 RAMs in SOJ and industry
standard EEPROM in TSSOP
168-pin (84-pin dual dual in-line package)
Single +3.3V(±0.3V) supply operation
Low stand-by power dissipation
8.64mW(Max) . . . . . . . . . . . . . . . . . . . LVCMOS input level
Low operation power dissipation
MH8V644AWZJ -5 . . . . . . . . . . . . . . . . . . 3.75W(Max)
MH8V644AWZJ -6 . . . . . . . . . . . . . . . . . . 3.46W(Max)
All input are directly LVTTL compatible
All output are three-state and directly LVTTL compatible
Includes(0.22uF x 8) decoupling capacitors
4096 refresh cycle every 64ms
Fast-page mode,Read-modify-write,
/CAS before /RAS refresh,Hidden refresh capabilities
JEDEC standard pin configuration and SPD
Gold plating contact pads
Row Address
A0 ~ A11
Column Address A0 ~ A10
124pin
BACK SIDE
125pin
40pin
FRONT SIDE
41pin
168pin
84pin
APPLICATION
Main memory unit for computers , Microcomputer memory
MIT-DS-0120-0.0
MITSUBISHI
ELECTRIC
( 1 / 20 )
25/Feb./1997

MH8V644AWZJ-6相似产品对比

MH8V644AWZJ-6 MH8V644AWZJ-5
描述 FAST PAGE MODE 536870912 - BIT ( 8388608 - WORD BY 64 - BIT ) DYNAMIC RAM FAST PAGE MODE 536870912 - BIT ( 8388608 - WORD BY 64 - BIT ) DYNAMIC RAM

 
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