MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MHVIC915R2/D
The RF Line
746-960 MHz RF LDMOS Wideband
Integrated Power Amplifier
The MHVIC915R2 wideband integrated circuit is designed for CDMA and
GSM/GSM EDGE applications. It uses Motorola’s newest high voltage (26
to 28 Volts) LDMOS IC technology and integrates a multi–stage structure.
Its wideband On–Chip integral matching circuitry makes it usable from 746
to 960 MHz. The linearity performances cover all modulations for cellular
applications: GSM, GSM EDGE, TDMA, and CDMA. The device is
packaged in a PFP–16 flat pack package that provides excellent thermal
performance through a solderable backside contact.
•
Typical CDMA Performance: 869–894 MHz, 27 Volts, I
DQ1
= 80 mA, I
DQ2
=
120 mA, 1–Carrier N–CDMA, IS–95 CDMA 9–Channel Forward
Driver Application
Output Power — 23 dBm
Power Gain — 31 dB
Adjacent Channel Power Ratio —
–60 dBc @ 750 kHz in a 30 kHz BW
–66 dBc @ 1.98 MHz in a 30 kHz BW
Output Application
Output Power — 34 dBm
PAE = 21%
Adjacent Channel Power Ratio —
–50 dBc @ 750 kHz in a 30 kHz BW
•
Typical GSM Performance: 921–960 MHz, 26 Volts
Output Power — 15 W P1dB
Power Gain — 30 dB @ P1dB
Drain Efficiency = 56% @ P1dB
•
On–Chip Matching (50 Ohm Input, >9 Ohm Output)
•
On–Chip Current Mirror g
m
Sensing FET for Self Bias Application
•
Integrated Temperature Compensation Capability
•
Usable for SCPA and MCPA Architecture
•
Integrated ESD Protection
•
Available in Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch
Reel.
MHVIC915R2
CDMA, GSM/GSM EDGE
746–960 MHz, 15 W, 27 V
RF LDMOS WIDEBAND
INTEGRATED AMPLIFIER
Freescale Semiconductor, Inc...
CASE 978–03
PFP–16
PLASTIC
V
BSD
V
BSG
V
D1
N.C.
2 Stage IC
V
D2
/RF
out
V
BSD
V
BSG
RF
in
IC
V
D1
Gnd
V
G1
V
G2
RF
in
Temperature Compensation
V
G1
V
G2
PIN CONNECTIONS
1
2
3
4
5
6
7
8
(Top View)
16
15
14
13
12
11
10
9
N.C.
V
D2
/RF
out
V
D2
/RF
out
V
D2
/RF
out
V
D2
/RF
out
V
D2
/RF
out
V
D2
/RF
out
N.C.
REV 3
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MHVIC915R2
1
Freescale Semiconductor, Inc.
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
J
Value
65
–0.5, +15
–65 to +150
150
Unit
Vdc
Vdc
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Driver Application
(P
out
= 0.2 W CW)
Output Application
(P
out
= 2.5 W CW)
Stage 1, 27 Vdc, I
DQ
= 80 mA
Stage 2, 27 Vdc, I
DQ
= 120 mA
Stage 1, 27 Vdc, I
DQ
= 80 mA
Stage 2, 27 Vdc, I
DQ
= 120 mA
Stage 1, 26 Vdc, I
DQ
= 50 mA
Stage 2, 26 Vdc, I
DQ
= 140 mA
Symbol
R
θJC
5.07
Max
Unit
°C/W
3.73
Freescale Semiconductor, Inc...
GSM Application
(P
out
= 15 W CW)
3.41
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M1 (Minimum)
C4 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22–A113
Rating
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
CDMA FUNCTIONAL TESTS
(In Motorola CDMA Test Fixture, 50
οhm
system) V
DS
= 27 V, I
DQ1
= 80 mA, I
DQ2
= 120 mA, 880 MHz,
1–Carrier N–CDMA, IS–95 CDMA 9–Channel Forward
Common–Source Amplifier Power Gain (P
out
= 23 dBm)
Power Added Efficiency (P
out
= 34 dBm)
Input Return Loss (P
out
= 23 dBm)
Adjacent Channel Power Ratio (P
out
= 23 dBm) @ 750 kHz offset in 30 kHz BW
Adjacent Channel Power Ratio (P
out
= 34 dBm) @ 750 kHz offset in 30 kHz BW
Gain Flatness @ P
out
= 23 dBm (865 MHz to 895 MHz)
Bias Sense FET Drain Current
V
BSD
= 27 V
V
BIAS BSG
= V
BIAS2 Q2
@ I
DQ2
= 120 mA
G
ps
η
IRL
ACPR
ACPR
G
F
I
BSD
29
—
—
—
—
—
0.8
31
21
–12
–60
–50
0.2
1.2
—
—
–9
–55
—
0.4
1.6
dB
%
dB
dBc
dBc
dB
mA
(continued)
MHVIC915R2
2
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS – continued
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
PERFORMANCE TESTS
(In Motorola Test Fixture, 50
οhm
system) V
DS
= 27 V, I
DQ1
= 80 mA, I
DQ2
= 120 mA, 865–895 MHz
Rating
Quiescent Current Accuracy over Temperature (–10 to 85°C) at Nominal Value
Gain Flatness @ P
out
= 23 dBm (800 MHz to 960 MHz)
Deviation from Linear Phase @ P
out
= 23 dBm
Group Delay @ P
out
= 23 dBm
Insertion Phase Window @ P
out
= 23 dBm (part to part)
Symbol
∆Iqt
G
F
∅
Delay
∆∅
Min
—
—
—
—
—
Typ
±5
0.20
±0.2
2.2
±10
Max
—
—
—
—
—
Unit
%
dB
°
ns
°
GSM FUNCTIONAL TESTS
(In Motorola GSM Test Fixture, 50
οhm
system) V
DS
= 26 V, I
DQ1
= 50 mA, I
DQ2
= 140 mA, 921–960 MHz, CW
Rating
Output Power at 1dB Compression Point
Common–Source Amplifier Power Gain @ P1dB
Symbol
P1dB
Gain
η
IRL
—
IMD3
η
Min
—
—
—
—
—
—
—
Typ
15
30
56
–16
0.9
–30
35
Max
—
—
—
—
—
—
—
Unit
Watts
dB
%
dB
%
dBc
%
Freescale Semiconductor, Inc...
Drain Efficiency @ P1dB
Input return Loss @ P1dB
EVM @ 5 W
Third Order Intermodulation Distortion (15 W PEP, 2 Tone 100 kHz spacing)
Drain Efficiency (15 W PEP, 2 Tone 100 kHz spacing)
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MHVIC915R2
3
Freescale Semiconductor, Inc.
V
BSD
V
BIAS BSG
R5
V
D1
C8
RF
INPUT
Z1
C7
Z11
1 NC
2
3
4
5
6
NC 16
15
14
13
12
11
Temperature
Compensation
10
NC 9
Z2
Z6
Z3
Z4
C1 C2
Z5
Z8
C3
Z9
C4
Z7
C5
+
C6
V
D2
RF
OUTPUT
C13
Z12
V
BIAS1
R1
C11
R3
C12
V
GS1
7
8
Freescale Semiconductor, Inc...
Z10
V
BIAS2
R2
C10
R4
C9
V
GS2
Z1
Z2
Z3
Z4
Z5
Z6
0.0438″ x 0.400″ 50
Ω
Microstrip
0.1709″ x 0.1004″ Microstrip
(not including IC pad length)
0.1222″ x 0.1944″ Microstrip
0.0836″ x 0.3561″ Microstrip
0.0438″ x 0.2725″ Microstrip
0.0504″ x 0.3378″ Microstrip
Z7
Z8
Z9
Z10
Z11
Z12
PCB
0.0504″ x 0.480″ Microstrip
0.0252″ x 0.843″ Microstrip
0.0252″ x 0.167″ Microstrip
0.040″ x 0.850″ Microstrip
0.025″ x 0.400″ Microstrip
0.020″ x 0.710″ Microstrip
Rogers 4350, 0.020″,
ε
r
= 3.50
Figure 1. MHVIC915 746–960 MHz Test Circuit Schematic
Table 1. MHVIC915 746–960 MHz Test Circuit Component Designations and Values
Part
C1, C2
C3, C4
C5, C8, C10, C11
C6
C7, C9, C12
C13
R1, R2, R5
R3, R4
Description
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47 pF NPO Capacitors (0805)
1
µF
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10
µF,
50 V Electrolytic Capacitor
0.01
µF
X7R Chip Capacitors (0805)
8.2 pF NPO Chip Capacitor (0805)
1 kW Chip Resistors (0603)
100 kW Chip Resistors (0603)
Value, P/N or DWG
ATC600S4R7CW
GRM40–001COG470J050BD
GRM42–2X7R105K050AL
ECEV1HA100SP
GRM40X7R103J050BD
GRM40–001COG8R2C050BD
RM73B2AT102J
RM73B2AT104J
Manufacturer
ATC
Murata
Murata
Panasonic
Murata
Murata
KOA Speer
KOA Speer
MHVIC915R2
4
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
MHVIC915
Rev 0
V
D1
V
BIAS BSG
V
BSD
V
D2
R5
C6
C8
C4
C7
C2
C5
C1
Freescale Semiconductor, Inc...
C13
C3
C9
R4
C10
C12
R3
C11
R1
V
BIAS1
V
BIAS2
R2
Figure 2. MHVIC915 746–960 MHz Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MHVIC915R2
5
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