HCTS74MS
September 1995
Radiation Hardened Dual-D
Flip-Flop with Set and Reset
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-183S CDIP2-T14, LEAD FINISH C
TOP VIEW
R1 1
D1 2
CP1 3
S1 4
Q1 5
Q1 6
GND 7
14 VCC
13 R2
12 D2
11 CP2
10 S2
9 Q2
8 Q2
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x
10
12
RAD
(Si)/s
• Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii
≤
5µA at VOL, VOH
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-183S CDFP3-F14, LEAD FINISH C
TOP VIEW
R1
D1
CP1
S1
Q1
Q1
GND
1
2
3
4
5
6
7
14
13
12
11
10
9
8
VCC
R2
D2
CP2
S2
Q2
Q2
Description
The Intersil HCTS74MS is a Radiation Hardened positive
edge triggered flip-flop with set and reset.
The HCTS74MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS74MS is supplied in a 14 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER
HCTS74DMSR
HCTS74KMSR
HCTS74D/Sample
HCTS74K/Sample
HCTS74HMSR
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
14 Lead SBDIP
14 Lead Ceramic Flatpack
14 Lead SBDIP
14 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number
File Number
460
518626
2143.2
HCTS74MS
Functional Diagram
S
CL
4(10)
CL
D
P
N
CL
CL
P
N
R
CL
P
N
CL
CL
P
N
CL
Q
6(8)
Q
5(9)
2(12)
1(13)
CP
3(11)
CL
CL
TRUTH TABLE
INPUTS
SET
L
H
L
H
H
H
RESET
H
L
L
H
H
H
L
CP
X
X
X
D
X
X
X
H
L
X
Q
H
L
H*
H
L
Q0
OUTPUTS
Q
L
H
H*
L
H
Q0
NOTE: L = Logic Level Low, H = Logic Level High, X = Don’t Care
= Transition from Low to High Level
Q0 = The level of Q before the indicated input conditions were established.
* This configuration is non-stable, that is, it will not persist when set and reset
inputs return to their inactive (High) level.
Spec Number
461
518626
Specifications HCTS74MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
74
24
o
C/W
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 116
30
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . 100ns/V Max.
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
2, 3
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
4.8
4.0
-4.8
-4.0
-
MAX
20
400
-
-
-
-
0.1
UNITS
µA
µA
mA
mA
mA
mA
V
PARAMETER
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
VCC
-0.1
-
-
-
-
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
V
1
2, 3
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
±0.5
±5.0
-
µA
µA
-
Noise Immunity
Functional Test
NOTES:
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B
1. All voltages reference to device GND.
2. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
3. Force/Measure functions may be interchanged.
Spec Number
462
518626
Specifications HCTS74MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
TPLH
VCC = 4.5V
9
10, 11
S to Q
TPLH
VCC = 4.5V
9
10, 11
S to Q
TPHL
VCC = 4.5V
9
10, 11
R to Q
TPHL
VCC = 4.5V
9
10, 11
R to Q
TPLH
VCC = 4.5V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
Input Capacitance
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, f = 1MHz
NOTES
1
1
CIN
VCC = Open, f = 1MHz
1
1
Output Transition
Time
Max Operating
Frequency
Data to CP Set-up
Time
Hold Time
TTHL
TTLH
FMAX
VCC = 4.5V
1
1
VCC = 4.5V
1
1
TSU
VCC = 4.5V
1
1
TH
VCC = 4.5V
1
1
Removal Time
R, S to CP
Pulse Width R, S
TREM
VCC = 4.5V
1
1
TW
VCC = 4.5V
1
1
Pulse Width CP
TW
VCC = 4.5V
1
1
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
-
-
-
-
11
12
3
3
5
6
14
16
14
16
MAX
53
55
10
10
15
22
25
16
-
-
-
-
-
-
-
-
-
-
UNITS
pF
pF
pF
pF
ns
ns
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
2
2
2
2
2
2
MAX
31
37
27
31
21
24
33
38
35
40
29
34
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
CP to Q, Q
SYMBOL
TPHL
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
Spec Number
463
518626
Specifications HCTS74MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
PARAMETERS
Quiescent Current
Output Current (Sink)
SYMBOL
ICC
IOL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50µA
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOH = -50µA
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,
(Note 3)
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
TEMPERATURE
+25
o
C
+25
o
C
MIN
-
4.0
MAX
0.4
-
UNITS
mA
mA
Output Current
(Source)
Output Voltage Low
IOH
+25
o
C
-4.0
-
mA
VOL
+25
o
C
-
0.1
V
Output Voltage High
VOH
+25
o
C
VCC
-0.1
-
-
-
V
Input Leakage Current
Noise Immunity
Functional Test
CP to Q, Q
IIN
FN
+25
o
C
+25
o
C
±5
-
µA
-
TPHL
TPLH
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
2
2
2
2
2
2
37
31
24
38
40
34
ns
ns
ns
ns
ns
ns
S to Q
S to Q
R to Q
R to Q
NOTES:
TPLH
TPHL
TPHL
TPLH
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
PARAMETER
ICC
IOL/IOH
DELTA LIMIT
6µA
-15% of 0 Hour
Spec Number
464
518626
stm32/stm8
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