HCTS193MS
September 1995
Radiation Hardened
Synchronous 4-Bit Up/Down Counter
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16
TOP VIEW
P1
Q1
Q0
CPD
CPU
Q2
Q3
GND
1
2
3
4
5
6
7
8
16 VCC
15 P0
14 MR
13 TCD
12 TCU
11 PL
10 P2
9 P3
Features
•
•
•
•
•
•
•
•
•
•
•
•
3 Micron Radiation Hardened CMOS SOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-
Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Fanout (Over Temperature Range)
- Standard Outputs - 10 LSTTL Loads
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
Input Current Levels Ii
≤
5µA at VOL, VOH
•
Description
The Intersil HCTS193MS is a Radiation Hardened 4-bit binary
UP/DOWN synchronous counter.
Presetting the counter to the number on the preset data inputs
(P0 - P3) is accomplished by a low on the asynchronous parallel
load input (PL). The counter is incremented on the low to high
transition of the clock-up input (high on the clock-down),
decremented on the low to high transition of the clock-down input
(high on the clock-up). A high level on the MR input overrides any
other input to clear the counter to zero. The Terminal Count Up
goes low half a clock period before the zero count is reached and
returns high at the maximum count. The Terminal Count Down
mode goes low half a clock period before the maximum count
and returns high at the maximum count.
The HCTS193MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS193MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
P1
Q1
Q0
CPD
CPU
Q2
Q3
GND
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16
TOP VIEW
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
P0
MR
TCD
TCU
PL
P2
P3
Ordering Information
PART NUMBER
HCTS193DMSR
HCTS193KMSR
HCTS193D/Sample
HCTS193K/Sample
HCTS193HMSR
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
DB NA
16 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number
File Number
592
518620
3066.1
HCTS193MS
Functional Diagram
P0
15
P1
1
P2
10
P3
9
14
MR
11
PL
5
CPU
PL R
P Q
FF0
CL Q
PL R
P Q
FF1
CL Q
PL R
P Q
FF2
CL Q
PL R
P Q
FF3
TCU
CL Q
13
TCD
12
4
CPD
8
GND
16
VCC
3
Q0
Q1
2
Q2
6
Q3
7
TRUTH TABLE
FUNCTION
Count Up
Count Down
Reset
Load Preset Inputs
H
X
X
X
X
= Transition from low to high
CLOCK UP
CLOCK DOWN
H
RESET
L
L
H
L
PARALLEL LOAD
H
H
X
L
H = High Level, L = Low Level, X = Immaterial,
Spec Number
593
518620
Specifications HCTS193MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
24
o
C/W
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 114
29
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . 500ns Max.
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
2, 3
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.80V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOL = -50µA, VIL = 0.80V
VCC = 5.5V, VIH = 2.75V,
IOL = -50µA, VIL = 0.8V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
4.8
4.0
-4.8
-4.0
-
MAX
40
750
-
-
-
-
0.1
UNITS
µA
µA
mA
mA
mA
mA
V
PARAMETER
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
VCC
-0.1
-
-
-
-
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
V
1
2, 3
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
±0.5
±5.0
-
µA
µA
-
Noise Immunity
Functional Test
NOTES:
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B
1. All voltages reference to device GND.
2. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
594
518620
Specifications HCTS193MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
TPHL
VCC = 4.5V
9
10, 11
CPD to Qn
TPLH
VCC = 4.5V
9
10, 11
TPHL
VCC = 4.5V
9
10, 11
PL to Qn
TPLH
VCC = 4.5V
9
10, 11
TPHL
VCC = 4.5V
9
10, 11
MR to Qn
TPHL
VCC = 4.5V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
2
2
2
2
2
2
2
2
MAX
29
34
35
41
31
36
36
42
32
36
45
53
37
44
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
CPU to Qn
SYMBOL
TPLH
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
Input Capacitance
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, f = 1MHz
NOTES
1
1
CIN
VCC = 5.0V, f = 1MHz
1
1
Output Transition
Time
Maximum Operating
Frequency (CPU,
CPD)
Setup Time
Pn to PL
Hold Time
Pn to PL
Hold Time CPD to
CPU or CPU to CPD
Pulse Width
CPU to CPD
Pulse Width PL
TTHL
TTLH
FMAX
VCC = 4.5V
1
1
VCC = 4.5V
1
1
TSU
VCC = 4.5V
1
1
TH
VCC = 4.5V
1
1
TH
VCC = 4.5V
1
1
TW
VCC = 4.5V
1
1
TW
VCC = 4.5V
1
1
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
-
-
-
-
15
22
0
0
16
24
23
35
16
24
MAX
53
75
10
10
15
22
25
15
-
-
-
-
-
-
-
-
-
-
UNITS
pF
pF
pF
pF
ns
ns
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Spec Number
595
518620
Specifications HCTS193MS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
Pulse Width MR
SYMBOL
TW
CONDITIONS
VCC = 4.5V
NOTES
1
1
Recovery Time
PL to CPU, CPD
Recovery Time
MR to CPU, CPD
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TREC
VCC = 4.5V
1
1
TREC
VCC = 4.5V
1
1
TEMPERATURE
+25
o
C
+125
o
C, 55
o
C
+25
o
C
+125
o
C, 55
o
C
+25
o
C
+125
o
C, 55
o
C
MIN
20
30
15
22
5
5
MAX
-
-
-
-
-
-
UNITS
ns
ns
ns
ns
ns
ns
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
PARAMETER
Quiescent Current
Output Current (Sink)
SYMBOL
ICC
IOL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V or 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50µA
VCC = 4.5V or 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = -50µA
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,
(Note 3)
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
TEMPERATURE
+25
o
C
+25
o
C
MIN
-
4.0
MAX
0.75
-
UNITS
mA
mA
Output Current
(Source)
Output Voltage Low
IOH
+25
o
C
-4.0
-
mA
VOL
+25
o
C
-
0.1
V
Output Voltage High
VOH
+25
o
C
VCC
-0.1
-
-
-
V
Input Leakage Current
Noise Immunity
Functional Test
CPU to Qn
IIN
FN
+25
o
C
+25
o
C
±5
-
µA
-
TPLH
TPHL
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
2
2
2
2
2
2
2
34
41
36
42
36
53
44
ns
ns
ns
ns
ns
ns
ns
CPD to Qn
TPLH
TPHL
PL to Qn
TPLH
TPHL
MR to Qn
NOTES:
TPHL
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
596
518620
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