HCTS163MS
September 1995
Radiation Hardened
Synchronous Counter
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16
TOP VIEW
MR 1
CP 2
P0 3
P1 4
P2 5
P3 6
PE 7
GND 8
16 VCC
15 TC
14 Q0
13 Q1
12 Q2
11 Q3
10 TE
9
SPE
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-Day
(Typ)
• Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
• Dose Rate Upset: >10
10
RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Standard Outputs 10 LSTTL Loads
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii
≤
5µA at VOL, VOH
Description
MR
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16
TOP VIEW
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
TC
Q0
Q1
Q2
Q3
TE
SPE
The Intersil HCTS163MS is a Radiation Hardened synchronous
presettable counter that feature look-ahead carry logic for use in
high speed counting application. HCTS163MS is a binary counter,
and is reset synchronously with the clock. Counting and parallel
presetting are both accomplished synchronously with the negative
to positive transition of the clock.
The HCTS163MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS163MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
CP
P0
P1
P2
P3
PE
GND
Ordering Information
PART NUMBER
HCTS163DMSR
HCTS163KMSR
HCTS163D/Sample
HCTS163K/Sample
HCTS163HMSR
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
DB NA
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number
File Number
570
518600
2480.2
HCTS163MS
Functional Block Diagram
P0
3
P1
4
P2
5
P3
6
Q0 Q1
Q2 Q3
7
PE
10
TE
9
SPE
1
MR
VCC
2
CP
P
T0
MR
CP
D0
Q0
P
T1
MR
CP
D1
Q1
P
T2
MR
CP
D2
Q2
P
T3
MR
CP
D3
Q3
TE
TE
14
Q0
13
Q1
12
Q2
Q3
11
15
TC
TRUTH TABLE
INPUTS
OPERATING MODE
Reset (clear)
Parallel Load
MR
l
h (Note 3)
h (Note 3)
Count
Inhibit
h (Note 3)
h (Note 3)
h (Note 3)
H = HIGH Voltage Level
L = LOW Voltage Level
h = HIGH voltage level one setup time prior to the LOW-to-HIGH clock transition
l = LOW voltage level one setup time prior to the LOW-to-HIGH clock transition
X = Immaterial
q = Lower case letter indicate the state of the referenced output prior to the LOW-to-HIGH clock transition
= LOW-to-HIGH clock transition
NOTES:
1. The TC output is HIGH when TE is HIGH and the counter is at terminal count (HLLH for 162 and HHHH for 163)
2. The HIGH-to-LOW transition of PE or TE on the 54/74163 and 54/74160 should only occur while CP is high for conventional operation
3. The LOW-to-HIGH transition of SPE or MR on the 54/74163 should only occur while CP is high for conventional operation
X
X
CP
PE
X
X
X
h
l (Note 2)
X
TE
X
X
X
h
X
l (Note 2)
SPE
X
l
l
h (Note 3)
h (Note 3)
h (Note 3)
PN
X
l
h
X
X
X
OUTPUTS
QN
L
L
H
Count
Qn
Qn
TC
L
L
(Note 1)
(Note 1)
(Note 1)
L
Spec Number
571
518600
Specifications HCTS163MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
24
o
C/W
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 114
29
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5 VCC (TR, TF) . . . . . . . .500ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
2, 3
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
4.8
4.0
-4.8
-4.0
-
MAX
40
750
-
-
-
-
0.1
UNITS
µA
µA
mA
mA
mA
mA
V
PARAMETER
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
VCC
-0.1
-
-
-
-
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
V
1
2, 3
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
±0.5
±5.0
-
µA
µA
-
Noise Immunity
Functional Test
NOTES:
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B
1. All voltages referenced to device GND.
2. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
572
518600
Specifications HCTS163MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
CP to TC
TPHL
TPLH
VCC = 4.5V
9
10, 11
MR to Qn, TC
TPHL
VCC = 4.5V
9
10, 11
TE to TC
TPHL
VCC = 4.5V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
2
2
MAX
25
29
28
33
50
75
23
29
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
CP to Qn
SYMBOL
TPHL
TPLH
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power Dissipation
SYMBOL
CPD
(NOTE 1)
CONDITIONS
VCC = 5.0V, f = 1MHz
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
+25
o
C
+125
o
C
Output Transition Time
TTHL
TTLH
VCC = 4.5V
+25
o
C
+125
o
C
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
MIN
-
-
-
-
-
-
MAX
78
176
10
10
15
22
UNITS
pF
pF
pF
pF
ns
ns
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
PARAMETER
Quiescent Current
Output Current (Sink)
SYMBOL
ICC
IOL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
TEMPERATURE
+25
o
C
+25
o
C
MIN
-
4.0
MAX
0.75
-
UNITS
mA
mA
Output Current
(Source)
IOH
+25
o
C
-4.0
-
mA
Spec Number
573
518600
Specifications HCTS163MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
200K RAD
LIMITS
PARAMETER
Output Voltage Low
SYMBOL
VOL
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V , IOL = 50µA
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V , IOH = -50µA
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,
(Note 3)
VCC = 4.5V
TEMPERATURE
+25
o
C
MIN
-
MAX
0.1
UNITS
V
Output Voltage High
VOH
+25
o
C
VCC
-0.1
-
-
-
V
Input Leakage Current
Noise Immunity
Functional Test
CP to Qn
IIN
FN
+25
o
C
+25
o
C
±5
-
µA
-
TPHL
TPLH
TPLH
TPLH
TPHL
TPHL
+25
o
C
2
29
ns
CP to TC
VCC = 4.5V
+25
o
C
2
33
ns
MR to Qn, TC
TE to TC
NOTES:
VCC = 4.5V
VCC = 4.5V
+25
o
C
+25
o
C
2
2
75
29
ns
ns
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
PARAMETER
ICC
IOL/IOH
DELTA LIMIT
12µA
-15% of 0 Hour
Spec Number
574
518600
Microchip MCU
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