HCTS11MS
November 1994
Radiation Hardened
Triple 3-Input AND Gate
Pinouts
14 PIN CERAMIC DUAL-IN-LINE
MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C
TOP VIEW
A1 1
B1 2
A2 3
B2 4
C2 5
Y2 6
GND 7
14 VCC
13 C1
12 Y1
11 C3
10 B3
9 A3
8 Y3
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K or 1 Mega-RAD (Si)
• Dose Rate Upset >10
10
RAD(Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max.
- VIH = VCC/2 Min
• Input Current Levels Ii
≤
5µA at VOL, VOH
Description
The Intersil HCTS11MS is a Radiation Hardened Triple 3-
Input AND Gate. A high on all inputs forces the output to a
High state.
The HCTS11MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS11MS is supplied in a 14 lead Weld Seal Ceramic
flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line
Package (D suffix).
14 PIN CERAMIC FLAT PACK
MIL-STD-1835 DESIGNATOR CDFP3-F14, LEAD FINISH C
TOP VIEW
A1
B1
A2
B2
C2
Y2
GND
1
2
3
4
5
6
7
14
13
12
11
10
9
8
VCC
C1
Y1
C3
B3
A3
Y3
Truth Table
INPUTS
An
L
L
L
L
H
H
H
H
Bn
L
L
H
H
L
L
H
H
Cn
L
H
L
H
L
H
L
H
OUTPUTS
Yn
L
L
L
L
L
Functional Diagram
An
Bn
Yn
Cn
L
L
H
NOTE: L = Logic Level Low, H = Logic level High
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com
|
Copyright
©
Intersil Corporation 1999
File Number
2409.1
7-141
Specifications HCTS11MS
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Impedance . . . . . . . . . . . . . . . .
θ
ja
θ
jc
Weld Seal DIC . . . . . . . . . . . . . . . . . . . 75
o
C/W
16
o
C/W
Weld Seal Flat Pack . . . . . . . . . . . . . . 64
o
C/W
12
o
C/W
Power Dissipation per Package (PD)
For T
A
= -55
o
C to +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
For T
A
= +100
o
C to +125
o
C. . . . . . . .Derate Linearly at 13mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . 100ns/V Max.
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2, 3
7, 8A, 8B
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
4.8
4.0
-4.8
-4.0
-
-
VCC
-0.1
VCC
-0.1
-0.5
-5.0
4.0
MAX
10
200
-
-
-
-
0.1
0.1
-
-
+0.5
+5.0
0.5
UNITS
µA
µA
mA
mA
mA
mA
V
V
V
V
µA
µA
-
PARAMETERS
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
Output Current
(Sink)
Output Current
(Source)
Output Voltage Low
IOL
IOH
VOL
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
Input Leakage
Current
Noise Immunity
Functional Test
NOTE:
IIN
VCC = 5.5V, VIN = VCC or
GND
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
FN
1. All voltages reference to device GND.
2. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
7-142
Specifications HCTS11MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
TPLH
VCC = 4.5V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input tr = tf = 3ns, VIL = GND, VIH = 3V.
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
MAX
18
20
20
22
UNITS
ns
ns
ns
ns
PARAMETER
Input to Output
SYMBOL
TPHL
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
Input Capacitance
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, f = 1MHz
NOTES
1
1
CIN
VCC = Open, f = 1MHz
1
1
Output Transition
Time
NOTES:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TTHL
TTLH
VCC = 4.5V
1
1
TEMPERATURE
+25
o
C
+125
o
C
+25
o
C
+125
o
C
+25
o
C
+125
o
C
MIN
MAX
UNITS
pF
pF
pF
pF
ns
ns
Typical 26
Typical 56
-
-
-
-
10
10
15
22
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
MIN
-
4.0
-4.0
-
MAX
0.2
-
-
0.1
1M RAD
LIMITS
MIN
-
4.0
-4.0
-
MAX
1.0
-
-
0.1
UNITS
mA
mA
mA
V
PARAMETERS
Quiescent Current
Output Current (Sink)
Output Current
(Source)
Output Voltage Low
SYMBOL
ICC
IOL
IOH
VOL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V and 5.5V,
VIH = VCC/2, VIL = 0.8V at 200K
RAD, VIL = 0.3V at 1M RAD,
IOL = 50µA
VCC = 4.5V and 5.5V,
VIH = VCC/2, VIL = 0.8V at 200K
RAD, VIL = 0.3V at 1M RAD,
IOH = -50µA
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V at 200K RAD,
VIL = 0.3V at 1M RAD (Note 3)
TEMP-
ERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
Output Voltage High
VOH
+25
o
C
VCC
-0.1
-
VCC
-0.1
-
V
Input Leakage Current
Noise Immunity
Functional Test
IIN
FN
+25
o
C
+25
o
C
-
-
±5
-
-
-
±5
-
µA
-
7-143
Specifications HCTS11MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
200K RAD
LIMITS
MIN
2
2
MAX
20
22
1M RAD
LIMITS
MIN
2
2
MAX
25
26
UNITS
ns
ns
PARAMETERS
Input to Output
SYMBOL
TPHL
TPLH
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
TEMP-
ERATURE
+25
o
C
+25
o
C
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input tr = tf = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
PARAMETER
ICC
IOL/IOH
DELTA LIMIT
3µA
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
Initial Test (Preburn-In)
Interim Test
I
(Postburn-In)
Interim Test
II
(Postburn-In)
PDA
Interim Test
III
(Postburn-In)
PDA
Final Test
Group A (Note 1)
Group B
Subgroup B-5
Subgroup B-6
Group D
NOTE:
1. Alternate Group A in accordance with method 5005 of MIL-STD-883 may be exercised.
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
Sample/5005
Sample/5005
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Subgroups 1, 2, 3, 9, 10, 11
ICC, IOL/H
READ AND RECORD
ICC, IOL/H
ICC, IOL/H
ICC, IOL/H
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS
Group E Subgroup 2
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
TEST
METHOD
5005
PRE RAD
1, 7, 9
POST RAD
Table 4
READ AND RECORD
PRE RAD
1, 9
POST RAD
Table 4 (Note 1)
7-144
Specifications HCTS11MS
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V
±
0.5V
VCC = 6V
±
0.5V
50kHz
25kHz
STATIC BURN-IN I TEST CONDITIONS (Note 1)
6, 8, 12
1, 2, 3, 4, 5, 7, 9, 10, 11,
13
-
14
-
-
STATIC BURN-IN II TEST CONDITIONS (Note 1)
6, 8, 12
7
-
1, 2, 3, 4, 5, 9, 10,
11, 13, 14
-
-
DYNAMIC BURN-IN TEST CONDITIONS (Note 2)
-
NOTE:
1.
Each pin except VCC and GND will have a resistor of 10KΩ
±
5% for static burn-in
2. Each pin except VCC and GND will have a resistor of 1KΩ
±
5% for dynamic burn-in
7
6, 8, 12
14
1, 2, 3, 4, 5, 9, 10,
11, 13
-
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
6, 8, 12
GROUND
7
VCC = 5V
±
0.5V
1, 2, 3, 4, 5, 9, 10, 11, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ
±
5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
AC Timing Diagrams
VIH
VS
VIL
TPLH
TPHL
VOH
INPUT
AC Load Circuit
DUT
TEST
POINT
CL
RL
CL = 50pF
VS
VOL
TTLH
80%
VOL
20%
80%
20%
TTHL
OUTPUT
RL = 500Ω
VOH
OUTPUT
AC VOLTAGE LEVELS
PARAMETER
VCC
VIH
VS
VIL
GND
HCTS
4.50
3.00
1.30
0
0
UNITS
V
V
V
V
V
7-145
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
