OMS410 OMS410A
OMS510
3 PHASE, LOW VOLTAGE, LOW R
DS(on)
, MOSFET
BRIDGE CIRCUIT IN A PLASTIC PACKAGE
Three Phase, 100 Volt, 15 To 45 Amp Bridge
With Current And Temperature Sensing
In A Low Profile Package
FEATURES
•
•
•
•
•
•
Three Phase Power Switch Configuration
Zener Gate Protection
10 Miliohm Shunt Resistor
Linear Thermal Sensor
Isolated Low Profile Package
Output Currents Up To 45 Amps
DESCRIPTION
This series of MOSFET switches is configured in a 3 phase bridge with a common
V
DD
line, precision series shunt resistor in the source line, and a sensing element to
monitor the substrate temperature. This device is ideally suited for Motor Control
applications where size, performance, and efficiency are key.
2.1
MAXIMUM RATINGS
(@ 25°C)
Part
Number
OMS410
OMS410A
OMS510
V
DS
(Volts)
100
100
100
R
DS(on)
(m )
85
85
42
I
D
(Amps)
15
20
45
Package
MP-3
MP-3
MP-3
SCHEMATIC
2
1
6
5
10
9
32, 33, 34
21
22
29, 30, 31
26, 27, 28
23, 24, 25
15,16,17
18,19, 20
3 4
7 8
1112
13
14
4 11 R0
2.1 - 53
OMS410, OMS410A, OMS510
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 70°C
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 m )
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Maximum Power Dissipation
2
Maximum Power Dissipation
2
OMS410
100
100
15
11
110
33
18
0.33
3.0
0.010
OMS410A
100
100
20
16
110
33
18
0.33
3.0
0.010
OMS510
100
100
45
45
180
66
36
0.66
1.5
0.010
Units
V
V
A
A
A
W
W
W/°C
°C/W
Ohms
Junction-To-Case Linear Derating Factor
Thermal Resistance Junction-To-Case
Sense Resistor
Note 1:
Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%.
Note 2:
Maximum Junction Temperature equal to 125°C.
ELECTRICAL CHARACTERISTICS: OMS410
(T
C
= 25° unless otherwise specified)
Characteristic
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 µA, V
GS
= 0
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 70°C
Gate-Body Leakage, V
GS
= ±12 V
V
BRDSS
I
DSS
I
GSS
100
-
-
-
-
-
-
-
-
10
100
±500
V
µA
µA
nA
2.1
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS
= V
GS
, I
D
= 250 µA
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 9.0 A
Static Drain-Source On-Resistance
T
C
= 70°C
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., V
GS
= 10
I
Don
V
GSth
R
DSon
2.0
-
-
15
-
-
-
-
4.0
0.058
0.1
-
A
V
DYNAMIC CHARACTERISTICS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
> I
D(on)
X R
DS(on)
Max., I
D
= 9.0 A,
V
DS
= 25 V,
V
GS
= 0,
f = 1.0 mHz
g
fs
C
iss
C
oss
C
rss
9.0
-
-
-
-
-
-
-
-
2600
910
350
mho
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
DD
= 100 V, I
D
=
15 A,
R
GS
= 10 , V
GS
= 10 V
t
don
t
r
t
doff
t
f
-
-
-
-
-
-
-
-
35
290
85
120
ns
ns
ns
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
Source - Drain Current (Pulsed)
Forward On-Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 28 A, V
GS
= 0,
I
SD
= 13 A, di/dt = 100 A/µSec
I
SD
I
SDM
*
V
SD
t
rr
Q
rr
-
-
-
-
-
-
-
-
133
0.85
14
56
2.5
-
-
A
A
V
ns
µC
RESISTOR CHARACTERISTICS
Resistor Tolerance
Temperature Coefficient, -40°C to +70°C
R
S
T
cr
9.0
-
10
100
11
-
m
ppm
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%
2.1 - 54
OMS410, OMS410A, OMS510
ELECTRICAL CHARACTERISTICS: OMS520
(T
C
= 25° unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 µA, V
GS
= 0
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 70°C
Gate-Body Leakage, V
GS
= ±12 V
I
GSS
V
(BRDSS
I
DSS
100
-
-
-
-
-
-
-
-
10
100
±500
V
µA
µA
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS
= V
GS
, I
D
= 250 µA
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 10 A
Static Drain-Source On-Resistance
T
C
= 70°C
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., V
GS
= 10
I
D(on)
V
GS(th)
R
DS(on)
2.0
-
-
20
-
-
-
-
4.0
0.058
0.100
-
A
V
DYNAMIC CHARACTERISTICS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
> I
D(on)
X R
DS(on)
Max., I
D
= 10 A
V
DS
= 25 V,
V
GS
= 0,
f = 1.0 mHz
g
fs
C
iss
C
oss
C
rss
9.0
-
-
-
-
-
-
-
-
2600
910
350
mho
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
DD
= 100 V, I
D
=
20 A,
R
GS
= 10 , V
GS
= 10 V
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
-
-
-
-
35
290
85
120
ns
ns
ns
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
Source - Drain Current (Pulsed)
Forward On-Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 28 A, V
GS
= 0,
I
SD
= 20 A,
di/dt = 100 A/µSec
I
SD
I
SDM
*
V
SD
t
rr
Q
rr
-
-
-
-
-
-
-
-
133
0.85
20
56
2.5
-
-
A
A
V
ns
µC
2.1
RESISTOR CHARACTERISTICS
Resistor Tolerance
Temperature Coefficient, -40°C to +70°C
R
S
T
cr
9.0
-
10
100
11
-
m
ppm
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%.
2.1 - 55
OMS410, OMS410A, OMS510
ELECTRICAL CHARACTERISTICS: OMS510
(T
C
= 25° unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 µA, V
GS
= 0
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 70°C
Gate-Body Leakage, V
GS
= ±12 V
I
GSS
V
(BRDSS
I
DSS
100
-
-
-
-
-
-
-
-
20
200
±500
V
µA
µA
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS
= V
GS
, I
D
= 250 µA
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 22.5 A
Static Drain-Source On-Resistance
T
C
= 70°C
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., V
GS
= 10
I
D(on)
V
GS(th)
R
DS(on)
2.0
-
-
45
-
-
-
-
4.0
0.029
0.050
-
A
V
DYNAMIC CHARACTERISTICS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
> I
D(on)
X R
DS(on)
Max., I
D
= 40 A
V
DS
= 100 V,
V
GS
= 0,
f = 1.0 mHz
g
fs
C
iss
C
oss
C
rss
18
-
-
-
-
-
-
-
-
5200
1820
700
mho
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
DD
= 100 V, I
D
=
45 A,
R
GS
= 10 , V
GS
= 10 V,
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
-
-
-
-
70
580
170
240
ns
ns
ns
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
Source - Drain Current (Pulsed)
Forward On-Voltage
Reverse Recovery Time
I
SD
= 45 A, V
GS
= 0,
I
SD
= 45 A,
di/dt = 100 A/µSec
I
SD
I
SDM
*
V
SD
t
rr
Q
rr
-
-
-
-
-
-
-
-
240
1.605
45
120
2.5
-
-
A
A
V
ns
µC
2.1
Reverse Recovered Charge
RESISTOR CHARACTERISTICS
Resistor Tolerance
Temperature Coefficient, -40°C to +70°C
R
S
T
cr
9.0
-
10
100
11
-
m
ppm
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%.
Mechanical Outline
.600
2.000
1.350
.325
.150
(4) PLCS.
.250
.500
. 35
1
.050
(34) PLCS.
1
.150
2.450
3.000
4.000
.300
.500
.360
.020
.360 MAX.
.180
.250
Pin 1:
Pin 2:
Pin 3:
Pin 4:
Pin 5:
Pin 6:
Pin 7:
Pin 8:
Pin 9:
Pin 10:
Pin 11:
Pin 12:
Pin 13:
Pin 14:
Pin 15:
Pin 16:
Pin 17:
Gate Q1
Source Q1
Gate Q2
Source Q2
Gate Q3
Source Q3
Gate Q4
Source Q4
Gate Q5
Source Q5
Gate Q6
Source Q6
+Sense Res.
-Sense Res.
Power GND
Power GND
Power GND
Pin 34: V
DD
Pin 33: V
DD
Pin 32: V
DD
Pin 31: Output Phase A
Pin 30: Output Phase A
Pin 29: Output Phase A
Pin 28: Output Phase B
Pin 17: Output Phase B
Pin 26: Output Phase B
Pin 25: Output Phase C
Pin 24: Output Phase C
Pin 23: Output Phase C
Pin 22: +PTC
Pin 21: -PTC
Pin 20: Power GND
Pin 19: Power GND
Pin 18: Power GND
Notes: •Contact factory for lead bending options.
•Mounting Recommendations: Maximum Mounting Torque: 3.0 mN.
The module must be attached to a flat heat sink (flatness 100mm maximum).
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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