HCS27MS
September 1995
Radiation Hardened
Triple 3-Input NOR Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14, LEAD FINISH C
TOP VIEW
A1 1
B1 2
A2 3
B2 4
C2 5
Y2 6
GND 7
14 VCC
13 C1
12 Y1
11 C3
10 B3
9 A3
8 Y3
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-Day
(Typ)
• Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
• Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current Levels Ii
≤
5µA at VOL, VOH
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP3-F14, LEAD FINISH C
TOP VIEW
A1
B1
A2
B2
C2
Y2
GND
1
2
3
4
5
6
7
14
13
12
11
10
9
8
VCC
C1
Y1
C3
B3
A3
Y3
Description
The Intersil HCS27MS is a Radiation Hardened Triple 3-Input
NOR Gate. A Low on all inputs forces the output to a High state.
The HCS27MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS27MS is supplied in a 14 lead Ceramic flatpack (K suffix)
or a SBDIP Package (D suffix).
Functional Diagram
(1, 3, 9)
An
(2, 4, 10)
Bn
(13, 5, 11)
Cn
(12, 6, 8)
Yn
Ordering Information
PART
NUMBER
HCS27DMSR
TEMPERATURE
RANGE
-55
o
C
to
+125
o
C
SCREENING
LEVEL
Intersil Class
S Equivalent
Intersil Class
S Equivalent
Sample
PACKAGE
TRUTH TABLE
14 Lead SBDIP
An
HCS27KMSR
-55
o
C
to
+125
o
C
14 Lead Ceramic
Flatpack
14 Lead SBDIP
L
L
HCS27D/
Sample
HCS27K/
Sample
HCS27HMSR
+25
o
C
L
L
+25
o
C
Sample
14 Lead Ceramic
Flatpack
Die
H
H
+25
o
C
Die
H
H
INPUTS
Bn
L
L
H
H
L
L
H
H
Cn
L
H
L
H
L
H
L
H
OUTPUTS
Yn
H
L
L
L
L
L
L
DB NA
L
NOTE: L = Logic Level Low, H = Logic level High
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number
File Number
63
518766
3054.1
Specifications HCS27MS
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
74
24
o
C/W
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 116
30
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (tr, tf) . . . . . . 100ns/V Max.
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% to VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
2, 3
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 3.15V,
IOL = 50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
4.8
4.0
-4.8
-4.0
-
MAX
10
200
-
-
-
-
0.1
UNITS
µA
µA
mA
mA
mA
mA
V
PARAMETER
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
VCC
-0.1
-
-
-
-
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
V
1
2, 3
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
±0.5
±5.0
-
µA
µA
-
Noise Immunity
Functional Test
FN
VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 2)
7, 8A, 8B
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
64
518766
Specifications HCS27MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
Input to Yn
TPLH
VCC = 4.5V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
MAX
18
20
20
22
UNITS
ns
ns
ns
ns
PARAMETER
Input to Yn
SYMBOL
TPHL
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, f = 1MHz
NOTES
1
1
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
1
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
1
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
-
-
MAX
24
27
10
10
15
22
UNITS
pF
pF
pF
pF
ns
ns
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
PARAMETER
Quiescent Current
Output Current (Sink)
SYMBOL
ICC
IOL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOL = 50µA
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOH = -50µA
VCC = 5.5V, VIN = VCC or GND
TEMPERATURE
+25
o
C
+25
o
C
MIN
-
4.0
MAX
0.2
-
UNITS
mA
mA
Output Current
(Source)
Output Voltage Low
IOH
+25
o
C
-4.0
-
mA
VOL
+25
o
C
-
0.1
V
Output Voltage High
VOH
+25
o
C
VCC
-0.1
-
-
V
Input Leakage Current
IIN
+25
o
C
±5
µA
Spec Number
65
518766
Specifications HCS27MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
200K RAD
LIMITS
PARAMETER
Noise Immunity
Functional Test
Input to Yn
SYMBOL
FN
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3)
VCC = 4.5V
VCC = 4.5V
TEMPERATURE
+25
o
C
MIN
-
MAX
-
UNITS
-
TPHL
TPLH
+25
o
C
+25
o
C
2
2
20
22
ns
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
PARAMETER
ICC
IOL/IOH
DELTA LIMIT
3µA
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
Initial Test (Preburn-In)
Interim Test
I
(Postburn-In)
Interim Test
II
(Postburn-In)
PDA
Interim Test
III
(Postburn-In)
PDA
Final Test
Group A (Note 1)
Group B
Subgroup B-5
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11,
(Note 2)
ICC, IOL/H
READ AND RECORD
ICC, IOL/H
ICC, IOL/H
ICC, IOL/H
Subgroup B-6
Group D
NOTES:
Sample/5005
Sample/5005
1, 7, 9
1, 7, 9
1. Alternate Group A inspection in accordance with Method 5005 of MIL-STD-883 may be exercised.
2. Table 5 parameters only.
Spec Number
66
518766
Specifications HCS27MS
TABLE 7. TOTAL DOSE IRRADIATION
TEST
CONFORMANCE
GROUPS
Group E Subgroup 2
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
METHOD
5005
PRE RAD
1, 7, 9
POST RAD
Table 4
READ AND RECORD
PRE RAD
1, 9
POST RAD
Table 4 (Note 1)
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V
±
0.5V
VCC = 6V
±
0.5V
50kHz
25kHz
STATIC BURN-IN I TEST CONDITIONS (Note 1)
6, 8, 12
1 - 5, 7, 9, 10, 11, 13
-
14
-
-
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
6, 8, 12
7
-
1 - 5, 9, 10, 11, 13, 14
-
-
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2)
-
NOTES:
1. Each pin except VCC and GND will have a resistor of 10KΩ
±
5% for static burn-in.
2. Each pin except VCC and GND will have a resistor of 1KΩ
±
5% for dynamic burn-in.
7
6, 8, 12
14
1 - 5, 9, 10, 11, 13
-
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
6, 8, 12
GROUND
7
VCC = 5V
±
0.5V
1 - 5, 9, 10, 11, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ
±
5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number
67
518766
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