The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components.
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AC (SMA)
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 495 V and Breakdown
Voltage up to 550 V. Typical fast response times are less than 1.0 picoseconds for unidirectional devices and less than 5.0 picoseconds for
bidirectional devices from 0 V to Minimum Breakdown Voltage.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration
minimizes roll away.
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Peak Forward Surge Current
8.3 ms Single Half Sine Wave Superimposed on Rated Load
(JEDEC Method)
(Note 3)
Steady State Power Dissipation @ TL = 75 °C
Maximum Instantaneous Forward Voltage @ I
PP
= 35 A
(For Unidirectional Units Only)
Operating Temperature Range
Storage Temperature Range
1.
2.
3.
SMAJ5.0A ~ SMAJ90A
SMAJ100A ~ SMAJ495A
Symbol
P
PK
I
FSM
P
M(AV)
V
F
T
STG
T
J
Value
400
40
1.0
3.5
5.0
-55 to +150
-55 to +150
Unit
Watts
Amps
Watts
Volts
°C
°C
Minimum Peak Pulse Power Dissipation (TP = 1 ms)
(Note 1,2)
Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.
Thermal Resistance Junction to Lead.
8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
How to Order
SMAJ 5.0 CA - H
Package
SMAJ = SMA/DO-214AC
Working Peak Reverse Voltage
5.0 = 5.0 VRWM (Volts)
Asia-Pacific:
Tel: +886-2 2562-4117
Email: asiacus@bourns.com
Europe:
Tel: +36 88 520 390
Email: eurocus@bourns.com
The Americas:
Tel: +1-951 781-5500
Email: americus@bourns.com
www.bourns.com
Suffix
A = 5 % Tolerance Unidirectional Device
CA = 5 % Tolerance Bidirectional Device
Reel
(blank) = 13 inch reel
-H = 7 inch reel
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
2. Suffix ‘CA’ denotes a 5 % tolerance bidirectional device.
Part No.
Marking
Part No.
Marking
Min.
Max.
7.00
10
5.0
800
9.2
43.5
7.37
10
6.0
800
10.3
38.8
7.98
10
6.5
500
11.2
35.7
8.60
10
7.0
200
12.0
33.3
9.21
1.0
7.5
100
12.9
31.0
9.83
1.0
8.0
50
13.6
29.4
10.4
1.0
8.5
20
14.4
27.8
11.1
1.0
9.0
10
15.4
26.0
12.3
1.0
10
5
17.0
23.5
13.5
1.0
11
1.0
18.2
22.0
14.7
1.0
12
1.0
19.9
20.1
15.9
1.0
13
1.0
21.5
18.6
17.2
1.0
14
1.0
23.2
17.2
18.5
1.0
15
1.0
24.4
16.4
19.7
1.0
16
1.0
26.0
15.3
20.9
1.0
17
1.0
27.6
14.5
22.1
1.0
18
1.0
29.2
13.7
24.5
1.0
20
1.0
32.4
12.3
26.9
1.0
22
1.0
35.5
11.3
29.5
1.0
24
1.0
38.9
10.3
31.9
1.0
26
1.0
42.1
9.5
34.4
1.0
28
1.0
45.4
8.8
36.8
1.0
30
1.0
48.4
8.3
40.6
1.0
33
1.0
53.3
7.5
44.2
1.0
36
1.0
58.1
6.9
49.1
1.0
40
1.0
64.5
6.2
52.8
1.0
43
1.0
69.4
5.8
55.3
1.0
45
1.0
72.7
5.5
58.9
1.0
48
1.0
77.4
5.2
62.7
1.0
51
1.0
82.4
4.9
66.3
1.0
54
1.0
87.1
4.6
58
1.0
93.6
4.3
71.2
1.0
73.7
1.0
60
1.0
96.8
4.1
78.6
1.0
64
1.0
103
3.9
86.0
1.0
70
1.0
113
3.5
92.1
1.0
75
1.0
121
3.3
95.8
1.0
78
1.0
126
3.2
104
1.0
85
1.0
137
2.9
111
1.0
90
1.0
146
2.7
123
1.0
100
1.0
162
2.5
135
1.0
110
1.0
177
2.3
147
1.0
120
1.0
193
2.1
159
1.0
130
1.0
209
1.9
185
1.0
150
1.0
243
1.6
197
1.0
160
1.0
259
1.5
209
1.0
170
1.0
275
1.5
222
1.0
180
1.0
292
1.4
247
1.0
200
1.0
324
1.2
272
1.0
220
1.0
356
1.1
309
1.0
250
1.0
405
1.0
371
1.0
300
1.0
486
0.8
432
1.0
350
1.0
567
0.7
494
1.0
400
1.0
648
0.6
535
1.0
434
1.0
698
0.6
543
1.0
440
1.0
713
0.6
578
1.0
495
1.0
760
0.5
3. For bidirectional devices with a V
R
of 10 volts or less, the I
R
limit is double.
@ I
T
(mA)
V
RWM
(V)
I
R
(μA)
V
RSM
(V)
I
RSM
(A)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
SMAJ Transient Voltage Suppressor Diode Series
Product Dimensions
A
A
Recommended Footprint
A
A
B
C
B
B
B
C
C
G
D
Dimension
A (Max.)
H
FC
E
D
B (Min.)
C (Min.)
Dimension
A
B
C
D
E
F
G
H
DIMENSIONS:
SMA
MM
(DO-214AC)
3.99
(INCHES)
- 4.57
(0.157 - 0.180)
2.29 - 2.92
E
(0.090 - 0.115)
1.25 - 1.65
(0.049 - 0.065)
MM
DIMENSIONS:
0.31
0.15 -
(INCHES)
(0.006 - 0.112)
4.83 - 5.59
(0.190 - 0.220)
0.05 - 0.203
(0.002 - 0.008)
1.98 - 2.62
(0.078 - 0.103)
0.76 - 1.52
(0.030 - 0.060)
MM
(INCHES)
F
SMA (DO-214AC)
2.70
(0.106)
2.10
(0.083)
1.27
(0.050)
MM
(INCHES)
DIMENSIONS:
Physical Specifications
Case ...........................................Molded plastic per UL Class 94V-0
Polarity....................... Cathode band indicates unidirectional device
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
The product will be dispensed in tape and reel format (see diagram below).
P
0
P
1
d
Index Hole
E
T
120 °
F
W
D2
D1 D
B
P
Trailer
A
Device
C
Leader
End
.......
.......
10 pitches (min.)
.......
.......
.......
.......
.......
.......
10 pitches (min.)
Start
W1
DIMENSIONS:
MM
(INCHES)
Direction of Feed
Devices are packed in accordance with EIA 481
standard specifications shown here.
7 Inch Reel
SMA (DO-214AC)
2.90 ± 0.20
(0.114 ± 0.008)
5.50 ± 0.20
(0.217 ± 0.008)
2.26 ± 0.20
(0.089 ± 0.008)
1.50 ± 0.10
(0.061 ± 0.004)
50.0
MIN.
(1.969)
13.0 ± 0.20
(0.512 ± 0.008)
1.75 ± 0.10
(0.069 ± 0.004)
5.50 ± 0.05
(0.217 ± 0.002)
4.00 ± 0.10
(0.157 ± 0.004)
4.00 ± 0.10
(0.157 ± 0.004)
2.00 ± 0.05
(0.079 ± 0.002)
0.30 ± 0.10
(0.012 ± 0.004)
12.00 ± 0.30
(0.472 ± 0.012)
18.4
MAX.
(0.724)
13 Inch Reel
Item
Carrier Width
Carrier Length
Carrier Depth
Sprocket Hole
Reel Outside Diameter
Reel Inner Diameter
Feed Hole Diameter
Sprocket Hole Position
Punch Hole Position
Punch Hole Pitch
Sprocket Hole Pitch
Embossment Center
Overall Tape Thickness
Tape Width
Reel Width
Quantity per Reel
Symbol
A
B
C
d
D
D1
D2
E
F
P
P0
P1
T
W
W1
--
178
(7.008)
330
(12.992)
1,000
5,000
REV. 06/16
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
在全球半导体产业因景气不佳而纷传并购、整合之际，两大IT巨头三星、IBM日前却双双宣布，将强化半导体产业投资。 三星电子本周一宣布，已向韩国证券交易所提交一份申请文件，打算2008年投下10.5亿美元，用于升级内存芯片生产线、改进技术工艺，从而提高产能并降低成本。无独有偶。本周二IBM公司宣布，未来3年将投资10亿美元，用于扩充位于纽约州 East Fishkill 的半导体工厂，以消...[详细]
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