CNY17
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection
Features
•
•
•
•
•
Isolation Test Voltage 5300 V
RMS
Long Term Stability
Industry Standard Dual-in-Line Package
e3
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A
C
NC
1
2
3
6 B
5 C
4 E
Agency Approvals
• Underwriters Lab File #E52744
System Code H or J
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
• BSI IEC60950 IEC60065
• FIMKO
i179004
Order Information
Part
CNY17-1
CNY17-2
CNY17-3
CNY17-4
CNY17-1X006
CNY17-1X007
CNY17-1X009
CNY17-2X006
CNY17-2X007
CNY17-2X009
CNY17-3X006
CNY17-3X007
CNY17-3X009
CNY17-4X006
CNY17-4X007
CNY17-4X009
Remarks
CTR 40 - 80 %, DIP-6
CTR 63 - 125 %, DIP-6
CTR 100 - 200 %, DIP-6
CTR 160 - 320 %, DIP-6
CTR 40 - 80 %, DIP-6 400 mil (option 6)
CTR 40 - 80 %, SMD-6 (option 7)
CTR 40 - 80 %, SMD-6 (option 9)
CTR 63 - 125 %, DIP-6 400 mil (option 6)
CTR 63 - 125 %, SMD-6 (option 7)
CTR 63 - 125 %, SMD-6 (option 9)
CTR 100 - 200 %, DIP-6 400 mil (option 6)
CTR 100 - 200 %, SMD-6 (option 7)
CTR 100 - 200 %, SMD-6 (option 9)
CTR 160 - 320 %, DIP-6 400 mil (option 6)
CTR 160 - 320 %, SMD-6 (option 7)
CTR 160 - 320 %, SMD-6 (option 9)
Description
The CNY17 is an optically coupled pair consisting of
a Gallium Arsenide infrared emitting diode optically
coupled to a silicon NPN phototransistor.
Signal information, including a DC level, can be trans-
mitted by the device while maintaining a high degree
of electrical isolation between input and output.
The CNY17 can be used to replace relays and trans-
formers in many digital interface applications, as well
as analog applications such as CRT modulation.
For additional information on the available options refer to
Option Information.
Document Number 83606
Rev. 1.5, 26-Oct-04
www.vishay.com
1
CNY17
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
Forward current
Surge current
Power dissipation
t
≤
10 µs
Test condition
Symbol
V
R
I
F
I
FSM
P
diss
Value
6.0
60
2.5
100
Unit
V
mA
A
mW
Output
Parameter
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector current
t < 1.0 ms
Power dissipation
Test condition
Symbol
BV
CEO
BV
EBO
I
C
I
C
P
diss
Value
70
7.0
50
100
150
Unit
V
V
mA
mA
mW
Coupler
Parameter
Isolation test voltage (between
emitter & detector referred to
climate DIN 50014,
part 2, Nov. 74)
Creepage distance
Clearance distance
Isolation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE0303, part 1
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Storage temperature
Operating temperature
Soldering temperature
max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm
R
IO
R
IO
T
stg
T
amb
T
sld
t = 1 sec
Test condition
Symbol
V
ISO
Value
5300
Unit
V
RMS
≥
7.0
≥
7.0
≥
0.4
175
≥
10
12
≥1
0
11
- 55 to + 150
- 55 to + 100
260
mm
mm
mm
Ω
Ω
°C
°C
°C
www.vishay.com
2
Document Number 83606
Rev. 1.5, 26-Oct-04
CNY17
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Breakdown voltage
Reserve current
Capacitance
Thermal resistance
Test condition
I
F
= 60 mA
I
R
= 10 mA
V
R
= 6.0 V
V
R
= 0 V, f = 1.0 MHz
Symbol
V
F
V
BR
I
R
C
O
R
th
6.0
0.01
25
750
10
Min
Typ.
1.25
Max
1.65
Unit
V
V
µA
pF
K/W
Output
Parameter
Collector-emitter capacitance
Collector - base capacitance
Emitter - base capacitance
Thermal resistance
Test condition
V
CE
= 5.0 V, f = 1.0 MHz
V
CB
= 5.0 V, f = 1.0 MHz
V
EB
= 5.0 V, f = 1.0 MHz
Symbol
C
CE
C
CB
C
EB
R
th
Min
Typ.
5.2
6.5
7.5
500
Max
Unit
pF
pF
pF
K/W
Coupler
Parameter
Collector-emitter saturation
voltage
Coupling capacitance
Collector-emitter leakage
current
V
CE
= 10 V, I
CEO
CNY17-1
CNY17-2
CNY17-3
CNY17-4
Test condition
V
F
= 10 mA, I
C
= 2.5 mA
Part
Symbol
V
CEsat
C
C
I
CEO
I
CEO
I
CEO
I
CEO
Min
Typ.
0.25
0.6
2.0
2.0
5.0
5.0
50
50
100
100
Max
0.4
Unit
V
pF
nA
nA
nA
nA
Current Transfer Ratio
Current Transfer Ratio and collector-emitter leakage current by dash number (T
amb
°C)
Parameter
I
C
/I
F
Test condition
I
F
= 10 mA, V
CE
= 5.0 V
Part
CNY17-1
CNY17-2
CNY17-3
CNY17-4
I
F
= 1.0 mA, V
CE
= 5.0 V
CNY17-1
CNY17-2
CNY17-3
CNY17-4
Symbol
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
Min
40
63
100
160
13
22
34
56
30
45
70
90
Typ.
Max
80
125
200
320
Unit
%
%
%
%
%
%
%
%
Document Number 83606
Rev. 1.5, 26-Oct-04
www.vishay.com
3
CNY17
Vishay Semiconductors
Switching Characteristics
Linear operation (without saturation)
Parameter
Turn-on time
Rise time
Turn-off time
Fall time
Cut-off frequency
Test condition
I
F
= 10 mA, V
CC
= 5.0 V, R
L
= 75 W
I
F
= 10 mA, V
CC
= 5.0 V, R
L
= 75 W
I
F
= 10 mA, V
CC
= 5.0 V, R
L
= 75 W
I
F
= 10 mA, V
CC
= 5.0 V, R
L
= 75 W
I
F
= 10 mA, V
CC
= 5.0 V,
Test condition
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5.0 mA
Rise time
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5.0 mA
Turn-off time
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5.0 mA
Fall time
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5.0 mA
Symbol
t
on
t
r
t
off
t
f
f
CO
Part
CNY17-1
CNY17-2
CNY17-3
CNY17-4
CNY17-1
CNY17-2
CNY17-3
CNY17-4
CNY17-1
CNY17-2
CNY17-3
CNY17-4
CNY17-1
CNY17-2
CNY17-3
CNY17-4
Symbol
t
on
t
on
t
on
t
on
t
f
t
f
t
f
t
f
t
off
t
off
t
off
t
off
t
f
t
f
t
f
t
f
Min
Typ.
3.0
2.0
2.3
2.0
250
Max
Unit
µs
µs
µs
µs
kHz
Switching operation (with saturation)
Parameter
Turn-on time
Min
Typ.
3.0
4.2
4.2
6.0
2.0
3.0
3.0
4.6
18
23
23
25
11
14
14
15
Max
Unit
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
I
F
R
L
= 75
Ω
I
C
V
CC
= 5
V
I
F
1 KΩ
V
CC
= 5
V
47
Ω
47
Ω
icny17_01
icny17_02
Figure 1. Linear Operation ( without Saturation)
Figure 2. Switching Operation (with Saturation)
www.vishay.com
4
Document Number 83606
Rev. 1.5, 26-Oct-04
CNY17
Vishay Semiconductors
(TA = –25°C, VCE = 5.0 V)
IC/IF = f (IF)
(TA = 50°C, VCE = 5.0 V)
IC/IF = f (IF)
1
2
3
4
1
2
3
4
icny17_06
icny17_03
Figure 3. Current Transfer Ratio vs. Diode Current
Figure 6. Current Transfer Ratio vs. Diode Current
(T A = 0 °C,
V
CE = 5.0
V)
I C /I F = f (I F )
(TA = 75°C, VCE = 5.0 V)
1
2
3
1
2
3
4
icny17_04
icny17_07
Figure 4. Current Transfer Ratio vs. Diode Current
Figure 7. Current Transfer Ratio vs. Diode Current
(TA = 25°C, VCE = 5.0 V)
IC/IF = f (IF)
(IF = 10 mA, VCE = 5.0 V)
IC/IF = f (T)
4
3
1
2
3
4
2
1
icny17_05
icny17_08
TA
Figure 5. Current Transfer Ratio vs. Diode Current
Figure 8. Current Transfer Ratio (CTR) vs. Temperature
Document Number 83606
Rev. 1.5, 26-Oct-04
www.vishay.com
5
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