TVS Diodes
Surface Mount – 200W > SMF3.3 Series
SMF3.3
Description
RoHS
Pb
e3
SMF3.3 is designed specifically to protect sensitive
electronic equipment from voltage transients induced by
lightning and other transient voltage events.
Features
• 200W peak pulse power
capability at 10/1000µs
waveform, repetition rate
(duty cycle): 0.01%
• 1200W peak pulse power
capability at 8/20us
waveform
• Excellent clamping
capability
• Compatible with industrial
standard package SOD-
123FL
• Low profile: maximum
height of 1.08mm.
• For surface mounted
applications to optimize
board space
• Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
30kV(Air), 30kV (Contact)
• ESD protection of data
lines in accordance with
IEC 61000-4-2
• EFT protection of data
lines in accordance with
IEC 61000-4-4
• Fast response time:
typically less than 1.0ns
from 0 Volts to V
BR
min
• High temperature
soldering: 260°C/40
seconds at terminals
• Built-in strain relief
• Meet MSL level1, per
J-STD-020C, LF maximun
peak of 260
°
C
• Matte tin lead–free plated
• Halogen-free and RoHS
compliant
• Pb-free E3 means 2
nd
level
interconnect is Pb-free
and the terminal finish
material is tin(Sn) (IPC/
JEDEC J-STD-609A.01)
Uni-directional
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power
Dissipation at
T
A
=25ºC (Note 1)
8/20µs
10/1000µs
Symbol
P
PPM
R
θJA
R
θJL
T
J
T
STG
Value
1200
200
220
100
-55 to 150
-55 to 150
Unit
W
W
°C/W
°C/W
°C
°C
Thermal Resistance Junction- to-
Ambient
Thermal Resistance Junction- to- Lead
Operating Temperature Range
Storage Temperature Range
Notes:
1. Non-repetitive current pulse, per Fig. 4 & 6 and derated above T
J
(initial) =25ºC per Fig. 3.
Functional Diagram
Bi-directional
Applications
SMF3.3 devices are ideal for the protection of portable
devices/hard drives, notebooks, V
CC
busses, POS terminal,
SSDs, power supplies, monitors, and vulnerable circuit
used in other consumer applications.
Cathode
Uni-directional
Anode
Electrical Characteristics
(T =25°C unless otherwise noted)
A
Part
Number
Marking
Code
Breakdown
Voltage V
BR
(Volts) @ I
T
MIN
MAX
4.3
Test
Current
I
T
(mA)
10
Reverse
Stand off
Voltage V
R
(V)
3.3
Maximum
Reverse
Leakage @ V
R
I
R
(µA)
0.5
Maximum
Peak Pulse
Current
(10/1000μS)
I
pp
(A)
30.0
Maximum
Clamping
Voltage @I
pp
(10/1000μS)
V
C
(V)
6.8
Maximum
Peak Pulse
Current
(8/20μS)
I
pp
(A)
120.0
Maximum
Clamping
Voltage @I
pp
(8/20μS)
V
C
(V)
10.0
SMF3.3
33
3.4
Notes:
1. V
BR
measured after I
T
applied for 300µs, I
T
= sequare wave pulse or equivalent.
2. Surge current waveform per 10/1000µs exponential wave and derated per Fig.2.
3. All terms and symbols are consistent with ANSI/IEEE C62.35.
4. Surge current waveform per 8/20µs exponential wave and derated per Fig.6.
©2015 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 07/28/16
TVS Diodes
TVS Diodes
Surface Mount – 200W > SMF3.3 Series
I-V Curve Characteristics
P
PPM
Peak Pulse Power Dissipation
-- Max power dissipation
V
R
Stand-off Voltage
-- Maximum voltage that can be applied to the
TVS without operation
V
BR
Breakdown Voltage
-- Maximum voltage that flows though the
TVS at a specified test current (I
T
)
V
C
Clamping Voltage
-- Peak voltage measured across the TVS at a
specified Ippm (peak impulse current)
I
R
Reverse Leakage Current
-- Current measured at V
R
V
F
Forward Voltage Drop for Uni-directional
note: V
F
distribution range from 10V to 15V
Uni-directional
Vc V
BR
V
R
I
R
I
T
V
F
V
I
pp
Ratings and Characteristic Curves
(T =25°C unless otherwise noted)
A
Figure 1 - TVS Transients Clamping Waveform
Voltage Transients
Figure 2 - Peak Pulse Power Rating Curve
10
TJ initial = Tamb
Voltage Across TVS
Voltage or Current
Current Through TVS
P
PPM
-Peak Pulse Power (kW)
1
0.1
0.001
Time
0.01
0.1
1
t
d
-Pulse Width (ms)
Figure 3 - Peak Pulse Power Derating Curve
100
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage %
80
60
40
20
0
Figure 4 - 10/1000
µ
S Pulse Waveform
150
I
PPM
- Peak Pulse Current, % I
RSM
tr=10µsec
Peak Value
IPPM
TJ=25°C
Pulse Width(td) is defined
as the point where the peak
current decays to 50% of IPPM
100
Half Value
IPPM
IPPM
2
( )
10/1000µsec. Waveform
as defined by R.E.A
50
0
25
50
75
100 125 150
T
J
- Initial Junction Temperature (ºC)
175
0
td
0
1.0
2.0
t-Time (ms)
3.0
4.0
©2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 07/28/16
TVS Diodes
Surface Mount – 200W > SMF3.3 Series
Figure 5 - Capacitance vs. Reverse Bias
120
100
Capacitance (pF)
Figure 6 - 8/20μS Pulse Waveform
110%
100%
90%
80%
Percent of I
PP
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Bias Voltage (V)
3
3.3
80
60
40
20
0
70%
60%
50%
40%
30%
20%
10%
0%
0.0
5.0
10.0
15.0
20.0
25.0
30.0
Time ( s)
Soldering Parameters
Reflow Condition
- Temperature Min (T
s(min)
)
Pre Heat
- Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
Average ramp up rate (Liquidus Temp (T
A
)
to peak
T
S(max)
to T
A
- Ramp-up Rate
Reflow
- Temperature (T
A
) (Liquidus)
- Time (min to max) (t
s
)
Lead–free assembly
150°C
200°C
Temperature (T)
T
P
Ramp-up
t
p
Critical Zone
T
L
to T
P
60 – 180 secs
3°C/second max
3°C/second max
217°C
60 – 150 seconds
260
+0/-5
°C
20 – 40 seconds
6°C/second max
8 minutes Max.
260°C
T
L
T
s(max)
t
L
T
s(min)
Ramp-down
Preheat
t
s
25˚C
t 25˚C to Peak
Peak Temperature (T
P
)
Time within 5°C of actual peak
Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
Time (t)
High Reliability Test Specification
Pre-condition
(HTRB/ TC/ PCT/
H3TRB)
Physical Specifications
HTRB
(1) Bake 24hrs @150°C
(2)168hrs @85% RH and 85°C
(3) I
R
reflow,3 reflows, peak temperature of
260°C
JESD 22-108C
V
CC
bias= 80%V
DRM
& T
A
=150°C, 1008hrs
MIL
-STD-883F Method 1010.8 Condition C
,
-65°C to150°C, 1000 cycles
JEDEC 22-A102C
100%RH @121°C @15psi, 96hrs
JESD 22-A101B
Vcc bias (pin1to pin3)=V
DRM
,85%RH, 85°C ,
1008 hours
JESD 22-A111
260°C ,10 secs.
Case
Polarity
Terminal
SOD-123FL plastic over passivated
junction
Color band denotes cathode except bipolar
Matte tin-plated leads, solderable per
JESD22-B102
Temperature Cycling
Pressure Cooker
Bias Humidity
(H3TRB)
RSH
©2015 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 07/28/16
TVS Diodes
TVS Diodes
Surface Mount – 200W > SMF3.3 Series
Dimensions
-
SOD-123FL Package
Dimensions
A
B
C
E
A
B
Millimeters
Min
2.90
3.50
0.85
1.70
0.43
0.10
0.00
0.90
Max
3.10
3.90
1.05
2.00
0.83
0.25
0.10
1.08
Min
0.114
0.138
0.033
0.067
0.017
0.004
0.000
0.035
Inches
Max
0.122
0.154
0.041
0.079
0.033
0.010
0.004
0.043
E
D
E
F
G
H
C
D
F
Mounting Pad Layout
1.6 (0.062)
1.3 (0.051)
G
H
1.4 (0.055)
Part Numbering System
Part Marking System
SMF 3.3
V
R
VOLTAGE
SERIES
F
L
Cathode Band
Marking Code
Trace Code Marking
Y:Year Code
M: Month Code
33
YM
Packaging Options
Part number
SMF3.3
Component
Package
SOD-123FL
Quantity
3000
Packaging Option
Tape & Reel – 8mm tape/7” reel
Packaging
Specification
EIA RS-481
Tape and Reel Specification
0.157
(4.0)
Cathode
0.31
(8.0)
0.157
(4.0)
Optional
7” 7 (178)
.0
0.80 (20.2)
Arbor Hole Dia.
0.059 DIA
(1.5)
Cover tape
Dimensions are in inches
(and millimeters).
0.33
(8.5)
Direction of Feed
©2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 07/28/16
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