MR2520L
Overvoltage
Transient Suppressor
Designed for applications requiring a low voltage rectifier with
reverse avalanche characteristics for use as reverse power transient
suppressors. Developed to suppress transients in the automotive
system, these devices operate in the forward mode as standard
rectifiers or reverse mode as power avalanche rectifier and will protect
electronic equipment from overvoltage conditions.
Features
http://onsemi.com
•
•
•
•
High Power Capability
Economical
Increased Capacity by Parallel Operation
Pb−Free Packages are Available*
OVERVOLTAGE
TRANSIENT SUPPRESSOR
24 − 32 VOLTS
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 2.5 Grams (Approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Maximum Lead Temperature for Soldering Purposes:
350°C 3/8″ from Case for 10 Seconds at 5 lbs. Tension
•
Polarity: Indicated by Diode Symbol or Cathode Band
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
DC Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Repetitive Peak Reverse Surge Current
(Time Constant = 10 ms, Duty Cycle
≤
1%,
T
C
= 25°C)
Peak Reverse Power (Time Constant = 10 ms,
Duty Cycle
≤
1%, T
C
= 25°C)
Average Rectified Forward Current , (Single
Phase, Resistive Load, 60 Hz, T
C
= 125°C)
(See Figure 4)
Non−Repetitive Peak Surge Current, Surge
Supplied at Rated Load Conditions Halfwave,
Single Phase
Operating and Storage Junction Temperature
Range
Symbol
V
RRM
V
RWM
V
R
I
RSM
Value
23
Unit
V
MICRODE AXIAL
CASE 194
STYLE 1
MARKING DIAGRAM
58
A
MR2520LAYYWW
G
G
P
RSM
I
O
2500
6.0
W
A
I
FSM
400
A
A
YY
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
T
J
, T
stg
−65 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
June, 2006 − Rev. 3
Publication Order Number:
MR2520L/D
MR2520L
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead,
Both Leads to Heat Sink with Equal Length
Thermal Resistance Junction−to−Case
Lead Length
6.25 mm
10 mm
15 mm
−
Symbol
R
qJL
Max
7.5
10
15
1.0
Unit
°C/W
R
qJC
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
Instantaneous Forward Voltage (Note 1) (I
F
= 100 A, T
C
= 25°C)
Instantaneous Forward Voltage (Note 1) (I
F
= 6.0 A, T
C
= 25°C)
Reverse Current (V
R
= 20 Vdc, T
C
= 25°C)
Reverse Current (V
R
= 20 Vdc, T
C
= 25°C)
Breakdown Voltage (Note 1) (I
R
= 100 mAdc, T
C
= 25°C)
Breakdown Voltage (Note 1) (I
R
= 90 A, T
C
= 150°C, PW = 80
ms)
Dynamic Resistance (I
R
= 100 mA, T
J
= 25°C, f = 1.0 kHz)
Dynamic Resistance (I
R
= 40 mA, T
J
= 25°C)
Breakdown Voltage Temperature Coefficient
Forward Voltage Temperature Coefficient @ I
F
= 10 mA
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
*Typical
Symbol
V
F
V
F
I
R
I
R
V
(BR)
V
(BR)
R
Z
R
Z
V
(BR)TC
V
FTC
Min
−
−
−
−
24
−
−
−
−
−
Max
1.25
0.90
10
300
32
40
5.0
0.15
0.09*
−2*
Unit
V
V
nAdc
nAdc
V
V
W
W
%/°C
mV/°C
ORDERING INFORMATION
Device
MR2520L
MR2520LG
MR2520LRL
MR2520LRLG
Package
Microde Axial
Microde Axial
(Pb−Free)
Microde Axial
Microde Axial
(Pb−Free)
800 / Tape & Reel
1000 / Box
Shipping
†
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MR2520L
IF, INSTANTANEOUS FORWARD CURRENT (A)
IR, REVERSE CURRENT (NORMALIZED)
1000
10
4
V
R
= 20 V
10
3
100
10
2
10
T
J
= 150°C
100°C
1.0
500
600
700
800
900
1000
1100
V
F
, INSTANTANEOUS FORWARD VOLTAGE (mV)
25°C
10
1
10
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
Figure 1. Forward Voltage
IF(avg), AVERAGE FORWARD CURRENT (A)
4000
3500
C, CAPACITANCE (pF)
3000
2500
2000
1500
1000
0
5
10
15
20
25
V
R
, REVERSE VOLTAGE (V)
25
Figure 2. Normalized Reverse Current
20
Both leads to heatsink with equal length
I
F(peak)
/I
F(avg)
=
p
15
10 mm
L = 6.25 mm
10
15 mm
5
0
20
40
60
80
100
120
140
160
180
T
L
, LEAD TEMPERATURE (°C)
Figure 3. Typical Capacitance
10
0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
R
q
JL, THERMAL RESISTANCE
JUNCTION TO LEAD (
°
C/W)
40
Figure 4. Maximum Current Ratings
Maximum
35
30
25
20
15
10
5
0
10
−3
10
−2
10
−1
10
0
10
1
10
2
0
5
t, TIME (S)
Both leads to heatsink (equal length)
10
15
20
25
Typical
Single to heatsink
Maximum
Typical
10
−1
10
−2
L = 6.25 mm, both leads to heatsink (equal length)
LEAD LENGTH (mm)
Figure 5. Thermal Response
Figure 6. Steady State Thermal Resistance
http://onsemi.com
3
MR2520L
IRSM, PEAK REVERSE CURRENT (A)
100
T
J
= 25°C
10000
PRSM, PEAK REVERSE POWER (W)
T
J
= 25°C
1000
10
1
10
100
1000
t, TIME CONSTANT (mS)
100
1
10
100
1000
t, TIME CONSTANT (mS)
Figure 7. Maximum Peak Reverse Current
1000
W RSM, PEAK REVERSE ENERGY (J)
PEAK REVERSE POWER (W)
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
25
Figure 8. Maximum Peak Reverse Power
T
J
= 25°C
100
Time Constant = 10 mS
Time Constant = 100 mS
10
1
1
10
100
1000
t, TIME CONSTANT (mS)
50
75
100
125
150
T
L
, LEAD TEMPERATURE (°C)
Figure 9. Maximum Reverse Energy
1.20
1.18
f, FREQUENCY (HERTZ)
V Z(Irsm) /V Z(100 mA)
1.16
1.14
1.12
1.10
1.08
1.06
1.04
1.02
1.00
10 20
30
40
50
60
70
80
90
100 110 120
I
RSM
, REPETITIVE PEAK REVERSE SURGE CURRENT (A)
PW = 80
mS,
T
L
= 25°C
10
0
Figure 10. Reverse Power Derating
1−5 mm (Both leads to heat sink)
10
−1
10
−2
1−20 mm (Both leads to heat sink)
10
−3
1
10
100
1000
TIME CONSTANT (ms)
Figure 11. Typical Clamping Factor
Figure 12. Maximum Load Dump Frequency
http://onsemi.com
4
MR2520L
2
W
dl/dt Limitation
100
mH
0 − 150 V
50 mF
MR2532L
Figure 13. Load Dump Test Circuit
100
dl/dt < 1 A/ms
80
60
(%)
40
20
0
0
0.1
t (50%)
t (37%)
0.2
t (10%)
t, TIME (S)
0.3
0.5
0.4
t (37%) = Time Constant
t (50%) = 0.7 t (37%)
t (10%) = 2.3 t (37%)
Figure 14. Load Dump Pulse Current
http://onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
