SMAJ
Transil™
Features
■
Peak pulse power:
– 400 W (10/1000
µs)
– 2.3 kW (8/20
μs)
Stand off voltage range: from 5 V to 188 V
Unidirectional and bidirectional types
Low leakage current:
– 0.2
μA
at 25 °C
– 1
μA
at 85 °C
Operating T
j max
: 150 °C
High power capability at T
j max
:
– 270 W (10/1000 µs)
JEDEC registered package outline
K
A
■
■
■
Unidirectional
Bidirectional
SMA
(JEDEC DO-214AC)
■
■
■
Description
The SMAJ Transil series has been designed to
protect sensitive equipment against electrostatic
discharges according to IEC 61000-4-2, and
MIL STD 883, method 3015, and electrical over
stress according to IEC 61000-4-4 and 5. These
devices are generally used against surges below
400 W (10/1000
μs).
Planar technology makes these devices suitable
for high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time.
SMAJ are packaged in SMA (SMA footprint in
accordance with IPC 7531 standard).
Complies with the following standards
■
IEC 61000-4-2 level 4
– 15 kV (air discharge)
– 8 kV (contact discharge)
IEC 61000-4-5 (see Table 3 for surge level)
MIL STD 883G, method 3015-7 Class 3B
– 25 kV HBM (human body model)
Resin meets UL 94, V0
MIL-STD-750, method 2026 solderability
EIA STD RS-481 and IEC 60286-3 packing
IPC 7531 footprint
■
■
■
■
■
■
TM:
Transil is a trademark of STMicroelectronics
July 2010
Doc ID 5544 Rev 12
1/10
www.st.com
10
Characteristics
SMAJ
1
Table 1.
Symbol
P
PP
T
stg
T
j
T
L
Characteristics
Absolute maximum ratings (T
amb
= 25 °C)
Parameter
Peak pulse power dissipation
(1)
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s.
T
j
initial = T
amb
Value
400
-65 to +150
-55 to +150
260
Unit
W
°C
°C
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2.
Symbol
R
th(j-l)
R
th(j-a)
Thermal resistances
Parameter
Junction to leads
Junction to ambient on printed circuit on recommended pad layout
Value
30
120
Unit
°C/W
°C/W
Figure 1.
Electrical characteristics - definitions
I
I
I
PP
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
α
T
V
F
R
D
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Dynamic resistance
Unidirectional
I
F
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
V
CL
V
BR
V
RM
I
R
I
RM
I
RM
I
R
V
V
RM
V
BR
V
CL
I
PP
I
PP
Bidirectional
Figure 2.
Pulse definition for electrical characteristics
Repetitive pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
tr
tp
2/10
Doc ID 5544 Rev 12
SMAJ
Table 3.
Electrical characteristics - parameter values (T
amb
= 25 °C)
I
RM
max@V
RM
Order code
25 °C 85 °C
µA
SMAJ5.0A/CA
SMAJ6.0A/CA
SMAJ6.5A/CA
SMAJ8.5A/CA
SMAJ10A/CA
SMAJ12A/CA
SMAJ13A/CA
SMAJ15A/CA
SMAJ18A/CA
SMAJ20A/CA
SMAJ22A/CA
SMAJ24A/CA
SMAJ26A/CA
SMAJ28A/CA
SMAJ30A/CA
SMAJ33A/CA
SMAJ40A/CA
SMAJ43A/CA
SMAJ48A/CA
SMAJ58A/CA
SMAJ70A/CA
SMAJ85A/CA
SMAJ100A/CA
SMAJ130A/CA
SMAJ154A/CA
SMAJ170A/CA
SMAJ188A/CA
20
20
20
20
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
50
50
50
50
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
5
6
6.5
8.5
10
12
13
15
18
20
22
24
26
28
30
33
40
43
48
58
70
85
100
130
154
170
188
6.4
6.7
7.2
9.4
13.3
V
BR
@I
R (1)
min
V
6.74
7.05
7.58
9.9
14
typ
mA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
CL
@I
PP
R
D (2)
10/1000 µs 10/1000 µs
max
V
9.2
10.3
11.2
14.4
17
19.9
21.5
24.4
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
64.5
69.4
77.4
93.6
113
137
162
209
246
275
328
A
(4)
43.5
38.8
35.7
27.7
23.5
20.1
18.6
16.4
13.7
12.3
11.2
10.3
9.5
8.8
8.3
7.5
6.2
5.7
5.2
4.3
3.5
2.9
2.5
1.9
1.6
1.4
1.4
Ω
0.049
0.075
0.091
0.145
0.201
0.259
0.298
0.361
0.514
0.637
0.760
0.912
1.07
1.26
1.39
1.70
2.49
2.91
3.56
5.21
7.72
11.4
15.7
26.0
35.6
47.2
69.3
V
CL
@I
PP
8/20 µs
max
V
13.4
13.7
14.5
19.5
21.7
25.3
27.2
32.5
39.3
42.8
48.3
50
53.5
59
64.3
69.7
84
91
100
121
146
178
212
265
317
353
388
A
(4)
174
170
160
124
106
91
85
71
59
54
48
46
43
39
36
33
27
25
23
19
16
13
11
9
7
6.5
6
Characteristics
R
D (2)
8/20 µs
αT
(3)
max
Ω
0.036
0.037
0.041
0.073
0.089
0.116
0.132
0.197
0.291
0.338
0.444
0.446
0.502
0.632
0.762
0.884
1.30
1.53
1.79
2.62
3.75
5.70
8.10
11.7
18.3
22.2
26.2
10-4/° C
5.7
5.9
6.1
7.3
7.8
8.3
8.4
8.8
9.2
9.4
9.6
9.6
9.7
9.8
9.9
10
10.1
10.2
10.3
10.4
10.5
10.6
10.7
10.8
10.8
10.8
10.8
11.1 11.7
14.4 15.2
16.7 17.6
20
21.1
22.2 23.4
24.4 25.7
26.7 28.1
28.9 30.4
31.1 32.7
33.3 35.1
36.7 38.6
44.4 46.7
47.8 50.3
53.3 56.1
64.4 67.8
77.8 81.9
94
111
144
171
189
209
99
117
152
180
199
220
1. Pulse test : t
p
< 50 ms
2. To calculate maximum clamping voltage at other surge level,use the following formula: V
CLmax
= V
CL
- R
D
x (I
PP
- I
PPappli
)
where I
PPappli
is the surge current in the application
3. To calculate V
BR
or V
CL
versus junction temperature, use the following formulas:
V
BR
@ T
J
= V
BR
@ 25°C x (1 +
αT
x (T
J
– 25)),
V
CL
@ T
J
= V
CL
@ 25°C x (1 +
αT
x (T
J
– 25))
4. Surge capability given for both directions for unidirectional and bidirectional types.
Doc ID 5544 Rev 12
3/10
Characteristics
SMAJ
Figure 3.
Peak pulse power dissipation
versus initial junction temperature
Figure 4.
Peak pulse power versus
exponential pulse duration
(T
j
initial = 25° C)
T
j
initial = 25 °C
P
pp
(W)
500
10.0
P
PP
(kW)
400
300
1.0
200
100
T
j
(°C)
0
0
25
50
75
100
125
150
175
t
P
(ms)
0.1
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
Figure 5.
Clamping voltage versus peak pulse current (exponential waveform, maximum values)
1000.0
IPP(A )
Tj initial=25 °C
100.0
10.0
8/20 µs
SMAJ188A
SMAJ24A
SMAJ12A
SMAJ40A
SMAJ85A
1.0
SMAJ5.0A
10/1000 µs
10 ms
V CL
(V)
1000
0.1
1
10
100
4/10
Doc ID 5544 Rev 12
SMAJ
Characteristics
Figure 6.
Junction capacitance versus
Figure 7.
reverse applied voltage for
unidirectional types (typical values)
C(pF)
10000
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
SMAJ5.0A
Junction capacitance versus
reverse applied voltage for
bidirectional types (typical values)
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
10000
C(pF)
1000
SMAJ12A
SMAJ24A
1000
SMAJ5.0CA
SMAJ12CA
SMAJ24CA
100
SMAJ40A
100
SMAJ85A
SMAJ40CA
SMAJ85CA
10
1
V
R
(V)
10
100
SMAJ188A
10
V
R
(V)
1
10
100
SMAJ188CA
1000
1000
Figure 8.
Peak forward voltage drop
versus peak forward current
(typical values)
Figure 9.
Relative variation of thermal
impedance, junction to ambient,
versus pulse duration
1.0E+02
I
FM
(A)
Z
th(j-a)
/ R
th(j-a)
1.00
Recommended pad layout
PCB FR4, copper thickness = 35 µm
1.0E+01
T
j
=125 °C
1.0E+00
T
j
=25 °C
0.10
1.0E-01
V
FM
(V)
1.0E-02
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
t
P
(s)
1.0E+03
Figure 10. Thermal resistance, junction to
ambient, versus copper surface
under each lead
130
120
110
100
90
80
70
60
50
40
30
20
10
0
R
th(j-a)
(°C/W)
Figure 11. Leakage current versus junction
temperature (typical values)
IR(nA)
1.E+03
PCB FR4, copper thickness = 35 µm
1.E+02
V
R
=V
RM
V
RM
< 10 V
1.E+01
1.E+00
V
R
=V
RM
V
RM
≥
10 V
S
CU
(cm²)
1.E-01
T
j
(°C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
25
50
75
100
125
150
Doc ID 5544 Rev 12
5/10
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
