SMP80MC
Trisil™ for telecom equipment protection
Features
■
■
■
■
■
■
■
Bidirectional crowbar protection
Voltage: range from 120 V to 320 V
Low V
BO
/ V
R
ratio
Micro capacitance equal to 12 pF @ 50 V
Low leakage current: I
R
= 2 µA max
Holding current: I
H
= 150 mA min.
Repetitive peak pulse current:
I
PP
= 80 A (10/1000 µs)
SMB
(JEDEC DO-214AA)
Benefits
■
Trisils are not subject to ageing and provide a
fail safe mode in short circuit for better
protection.
Helps equipment meet main standards such as
UL60950, IEC 950 / CSA C22.2 and UL1459.
Epoxy meets UL94, V0.
Package is JEDEC registered (DO-214AA).
■
■
■
Description
The SMP80MC is a series of micro capacitance
transient surge arrestors designed for the
protection of high debit rate communication
equipment. Its micro capacitance avoids any
distortion of the signal and is compatible with
digital transmission like ADSL2 and ADSL2+.
Complies with the following standards
■
■
■
■
■
GR-1089 Core
ITU-T-K20/K21
IEC 61000-4-5
TIA/EIA IS-968
UL497B recognized, UL file E136224
Applications
Any sensitive equipment requiring protection
against lightning strikes and power crossing:
■
Terminals (phone, fax, modem...) and central
office equipment
TM:
Trisil is a trademark of STMicroelectronics.
February 2012
Doc ID 9702 Rev 5
1/11
www.st.com
11
SMP80MC
Table 2.
Symbol
Characteristics
Absolute ratings (T
amb
= 25 °C)
Parameter
Conditions
10/1000 µs
8/20 µs
10/560 µs
5/310 µs
10/160 µs
1/20 µs
2/10 µs
8/20 µs
t = 0.2 s
t=1s
t=2s
t = 15 mn
t = 16.6 ms
t = 20 ms
Value
80
200
100
120
150
200
250
5
14
8
6.5
2
7.5
7.8
-55 to 150
°C
Unit
I
PP
Repetitive peak pulse current (see
Figure 2)
A
I
FS
Fail-safe mode: maximum current
(1)
Non repetitive surge peak on-state current
(sinusoidal)
kA
I
TSM
A
I
2
t
T
stg
T
j
T
L
I
2
t value for fusing
Storage temperature range
Operating junction temperature range
A
2
s
-40 to 150
260
°C
Maximum lead temperature for soldering during 10 s.
1. In fail safe mode the device acts as a short circuit.
Table 3.
Symbol
R
th(j-a)
R
th(j-l)
Thermal resistances
Parameter
Junction to ambient (with recommended footprint)
Junction to leads
Value
100
20
Unit
°C/W
°C/W
Figure 1.
Electrical characteristics - definitions (T
amb
= 25 °C)
Symbol
V
RM
V
BO
I
RM
I
PP
I
BO
I
H
V
R
I
R
C
Parameter
Stand-off voltage
Breakover voltage
Leakage current
Peak pulse current
Breakover current
Holding current
Continuous reverse voltage
Leakage current at V
R
Capacitance
I
PP
I
I
BO
I
H
I
RM
V
V
RM
V
R
V
BO
Doc ID 9702 Rev 5
3/11
Characteristics
Table 4.
Electrical characteristics - values (T
amb
= 25 °C)
I
RM
@ V
RM
Types
max.
µA
SMP80MC-120
SMP80MC-140
SMP80MC-160
SMP80MC-200
SMP80MC-230
SMP80MC-270
SMP80MC-320
2
V
108
126
144
180
207
243
290
5
I
R
@ V
R
max.
µA
V
120
140
160
200
230
270
320
Dynamic
Static
V
BO(1)
V
BO
@ I
BO(2)
max.
V
155
180
205
255
295
345
400
max.
V
155
180
205
255
295
345
400
800
150
max.
mA
I
H(3)
min.
mA
SMP80MC
C
(4)
typ.
pF
C
(5)
typ.
pF
12
25
1. See
Figure 10: Test circuit 1 for dynamic I
BO
and V
BO
parameters
2. See
Figure 11: Test circuit 2 for I
BO
and V
BO
parameters
3. See
Figure 12: Test circuit 3 for dynamic I
H
parameter
4. V
R
= 50 V bias, V
RMS
= 1 V, F= 1 MHz
5. V
R
= 2 V bias, V
RMS
= 1 V, F = 1 MHz
4/11
Doc ID 9702 Rev 5
SMP80MC
Characteristics
Figure 2.
Pulse waveform
Figure 3.
I
TSM
(A)
Non repetitive surge peak on-state
current versus overload duration
% I
PP
100
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
40
35
30
25
F=50Hz
Tj initial = 25°C
50
20
15
10
0
t
r
Figure 4.
t
p
t
5
t(s)
0
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
On-state voltage versus on-state
current (typical values)
Figure 5.
Relative variation of holding
current versus junction
temperature
I
T
(A)
100
Tj=25°C
I
H
[Tj] / I
H
[Tj=25°C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
T
(V)
10
0
1
2
3
4
5
6
7
8
0.2
0.0
-40 -30 -20 -10
0
10
20
30
Tj(°C)
40
50
60
70
80
90 100 110 120 130
Figure 6.
Relative variation of breakover
voltage versus junction
temperature
Figure 7.
Relative variation of leakage
current versus junction
temperature (typical values)
V
BO
[Tj] / V
BO
[Tj=25°C]
1.08
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
0.94
-40 -30 -20 -10
0
10
20
30
40
50
60
70
80
90 100 110 120 130
1.E+01
1.E+02
1.E+03
I
R
[Tj] / I
R
[Tj=25°C]
V
R
=243V
Tj(°C)
1.E+00
25
50
Tj(°C)
75
100
125
Doc ID 9702 Rev 5
5/11
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
