SMA6J
High junction temperature Transil™
Datasheet
-
production data
Description
A
K
Unidirectional
Bidirectional
The SMA6J Transil series has been designed to
protect sensitive equipment against electro-static
discharges according to IEC 61000-4-2, MIL
STD 883 Method 3015, and electrical overstress
such as IEC 61000-4-4 and 5. They are
generally for surges below 600 W 10/1000 µs.
This planar technology makes it compatible with
high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time. Their low clamping voltages provides a
better safety margin to protect sensitive circuits
with extended life time expectancy.
Packaged in SMA, this minimizes PCB space
consumption (SMA footprint in accordance with
IPC 7531 standard).
SMA
(JEDEC DO-214AC)
Features
Peak pulse power:
– 600 W (10/1000 µs)
– 4 kW (8/20 µs)
Stand off voltage range: from 5 V to 188 V
Unidirectional and bidirectional types
Low clamping voltage versus standard series
Low leakage current:
– 0.2 µA at 25 °C
– 1 µA at 85 °C
Operating T
j
max: 175 °C
JEDEC registered package outline
Complies with the following standards
IEC 61000-4-2 level 4:
– 15 kV (air discharge)
– 8 kV (contact discharge)
MIL STD 883G-Method 3015-7: class3B
– 25 kV (human body model)
TM: Transil is a trademark of STMicroelectronics
July 2017
This is information on a product in full production.
DocID13274 Rev 5
1/10
www.st.com
Characteristics
SMA6J
1
Characteristics
Table 1. Absolute ratings (T
amb
= 25 °C)
Symbol
P
PP
P
I
FSM
T
stg
T
j
T
L
Parameter
Peak pulse power dissipation
(1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward current for
unidirectional types
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s
T
j
initial = T
amb
T
amb
= 55 °C
t
p
= 10 ms
T
j
initial = T
amb
Value
600
4
60
-65 to +175
-55 to +175
260
Unit
W
W
A
°C
°C
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2. Thermal resistances
Symbol
R
th (j-l)
R
th (j-a)
Junction to leads
Junction to ambient on printed circuit on recommended pad layout
Parameter
Value
30
120
Unit
°C/W
°C/W
Table 3. Electrical characteristics - definitions (T
amb
= 25 °C)
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
T
V
F
R
D
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current
@ V
RM
Peak pulse current
Voltage temperature
coefficient
Forward voltage
drop
Dynamic resistance
I
PP
Unidirectional
I
I
F
I
I
PP
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
V
CL
V
BR
V
RM
I
R
I
RM
I
RM
I
R
V
V
RM
V
BR
V
CL
I
PP
Bidirectional
2/10
DocID13274 Rev 5
SMA6J
Table 4. Electrical characteristics - values (T
amb
= 25 °C)
I
RM
max@V
RM
Type
25 °C 85 °C
µA
SMA6J5.0A/CA
SMA6J6.0A/CA
SMA6J6.5A/CA
SMA6J8.5A/CA
SMA6J10A/CA
SMA6J12A/CA
SMA6J13A/CA
SMA6J15A/CA
SMA6J18A/CA
SMA6J20A/CA
SMA6J24A/CA
SMA6J26A/CA
SMA6J28A/CA
SMA6J33A/CA
SMA6J40A/CA
SMA6J48A/CA
SMA6J58A/CA
SMA6J70A/CA
SMA6J85A/CA
SMA6J100A/CA
SMA6J130A/CA
SMA6J154A/CA
SMA6J170A/CA
SMA6J188A/CA
20
20
20
20
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
50
50
50
50
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
min
typ
V
max
mA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
max
V
9.1
9.5
10.2
A
68
61
56
0.029
0.034
0.040
0.070
0.093
0.133
0.154
0.206
0.288
0.354
0.516
0.600
0.697
0.963
1.42
2.04
2.97
4.38
6.45
9.03
14.9
22.1
30.0
48.5
max
V
13.4
13.7
14.5
19.5
21.7
25.3
27.2
32.5
39.3
42.8
50
53.5
59
69
84
100
121
146
178
212
265
317
353
388
A
298
290
276
205
184
157
147
123
102
93
80
75
68
57
48
40
33
27
22.5
19
15
12.6
11.3
10.3
V
BR
@I
R(1)
R
D(2)
V
CL
@I
PP
10/1000
10/1000 µs
µs
V
CL
@I
PP
8/20 µs
Characteristics
R
D(2)
8/20 µs
T
(3)
max
0.021
0.022
0.024
0.044
0.051
0.068
0.076
0.114
0.168
0.196
0.256
0.288
0.363
0.512
0.728
1.03
1.51
2.22
3.29
4.69
7.03
10.2
12.7
15.2
10-4/°C
5.7
5.9
6.1
7.3
7.8
8.3
8.4
8.8
9.2
9.4
9.6
9.7
9.8
10.0
10.1
10.3
10.4
10.5
10.6
10.7
10.8
10.8
10.8
10.8
5.0 6.40 6.74 7.07
6.0 6.70 7.05 7.41
6.5 7.20 7.58 7.96
8.5
10
12
13
15
18
20
24
26
28
33
40
48
58
70
85
9.4
9.9
10.4
13.3 41.7
15.7
18.8
20.4
37
31
29
11.1 11.7 12.3
13.3 14.0 14.7
14.4 15.2 15.9
16.7 17.6 18.5
20.0 21.1 22.1
22.2 23.4 24.5
26.7 28.1 29.5
28.9 30.4 31.9
31.1 32.7 34.4
36.7 38.6 40.6
44.4 46.7 49.1
53.3 56.1 58.9
64.4 67.8 71.2
77.8 81.9 86.0
94
99
117
152
180
199
220
104
123
159
189
209
231
23.6 25.1
28.3 21.5
31.4 19.4
37.8
16
40.9 14.9
44.0 13.8
51.9
62.8
75.4
91.1
110
134
157
204
242
275
328
11.8
9.7
8.1
6.7
5.5
4.6
3.8
3
2.4
2.2
2
100 111
130 144
154 171
170 189
188 209
1. Pulse test: t
p
<50ms.
2. To calculate maximum clamping voltage at other surge currents, use the following formula
V
CLmax
= R
D
x I
PP
+ V
BRmax
3. To calculate V
BR
versus junction temperature, use the following formula:
V
BR
@ T
j
= V
BR
@ 25 °C x (1 +
T
x (T
j
- 25))
50
%I
PP
100
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
0
t
r
t
p
t
DocID13274 Rev 5
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10
Characteristics
SMA6J
Figure 1. Peak power dissipation versus initial Figure 2. Peak pulse power versus exponential
junction temperature
pulse duration
(T
j
initial = 25 °C)
%
110
100
90
80
70
60
1.0
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
10.0
T
j
initial=25°C
P
PP
(kW)
T
j
(°C)
0.1
0.01
0.10
t
p
(ms)
1.00
10.00
Figure 3. Clamping voltage versus peak pulse current
(exponential waveform, maximum values)
1000
I
PP
(A)
T
j
initial=25 °C
100
10
8/20 µs
10/1000 µs
SMA6J188A
SMA6J5.0A
1
SMA6J12A
SMA6J24A
SMA6J40A
SMA6J85A
0.1
1
10
V
CL
(V)
100
1000
4/10
DocID13274 Rev 5
SMA6J
Characteristics
Figure 4. Junction capacitance versus reverse
applied voltage (typical values) (SMA6JxxA)
C(pF)
10000
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
SMA6J5.0A
Figure 5. Junction capacitance versus reverse
applied voltage (typical values) (SMA6JxxCA)
C(pF)
10000
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
1000
SMA6J5.0CA
SMA6J13CA
1000
SMA6J13A
100
SMA6J26A
SMA6J26CA
100
SMA6J58A
SMA6J58CA
10
SMA6J188CA
10
1
10
V
R
(V)
100
SMA6J188A
1
1000
1
10
V
R
(V)
100
1000
Figure 6. Peak forward voltage drop versus
peak forward current (typical values)
I
FM
(A)
1.E+01
Figure 7. Relative variation of thermal
impedance junction to ambient versus pulse
duration (printed ciruit board FR4, S
Cu
= 1 cm
2
)
Z
th(j-a)
/R
th(j-a)
1.00
T
j
=125°C
1.E+00
T
j
=25°C
0.10
1.E-01
V
FM
(V)
1.E-02
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
t
p
(S)
0.01
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Figure 8. Thermal resistance junction to
ambient versus copper surface under each lead
(printed circuit board FR4, e
Cu
= 35 µm)
R
th(j-a)
(°C/W)
130
120
110
100
90
Figure 9. Leakage current versus junction
temperature (typical values)
I
R
(nA)
1.E+04
V
R
=V
RM
1.E+03
V
BR
≤
11.7V
1.E+02
80
70
60
50
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.E+01
V
BR
>
11.7V
S
CU
(cm
2
)
1.E+00
25
50
75
T
j
(°C)
100
125
150
175
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