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SMBJ110CA-M3-52

产品描述ESD Suppressors / TVS Diodes 600W,110V 5%,BIDIR,SMB TVS
产品类别电路保护   
文件大小93KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
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SMBJ110CA-M3-52概述

ESD Suppressors / TVS Diodes 600W,110V 5%,BIDIR,SMB TVS

SMBJ110CA-M3-52规格参数

参数名称属性值
产品种类
Product Category
ESD Suppressors / TVS Diodes
制造商
Manufacturer
Vishay(威世)
工厂包装数量
Factory Pack Quantity
750
单位重量
Unit Weight
0.003386 oz

文档预览

下载PDF文档
SMBJ5.0A thru SMBJ188CA
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
DO-214AA (SMB J-Bend)
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
BR
(bi-directional)
V
BR
(uni-directional)
V
WM
P
PPM
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
6.4 V to 231 V
6.4 V to 231 V
5.0 V to 188 V
600 W
100 A
150 °C
Uni-directional, bi-directional
DO-214AA (SMBJ)
MECHANICAL DATA
Case:
DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional use CA suffix (e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)
Peak pulse current with a 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM (1)(2)
I
PPM (1)
I
FSM (2)
T
J
, T
STG
VALUE
600
See next table
100
- 55 to + 150
UNIT
W
A
A
°C
Revision: 06-Feb-14
Document Number: 89284
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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