Fast Recovery
Epitaxial Diode
(FRED) Module
V
RSM
V
600
V
RRM
V
600
Type
MEA95-06 DA
1
2
3
MEA 95-06 DA
MEK 95-06 DA
MEE 95-06 DA
V
RRM
= 600 V
I
FAV
= 95 A
t
rr
= 250 ns
TO-240 AA
2
MEK 95-06 DA
1
2
3
3
MEE 95-06 DA
1
2
3
1
Symbol
I
FRMS
I
FAV
ÿÿ
x
I
FRM
I
FSM
Test Conditions
T
case
= 75
°C
T
case
= 75
°C;
rectangular, d = 0.5
t
P
< 10
ms;
rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
142
95
TBD
1200
1300
1080
1170
7200
7100
5800
5700
-40...+150
-40...+125
110
A
A
A
A
A
A
A
A
2
s
A
2
s
As
A
2
s
°C
°C
°C
W
V~
V~
2
q
q
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
I
2
t
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
q
q
q
q
q
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
stg
T
Hmax
P
tot
V
ISOL
M
d
d
S
d
A
a
Weight
Symbol
I
R
Test Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 100 A;
I
F
= 300 A;
V
T0
r
T
R
thJH
R
thJC
t
rr
I
RM
V
R
= V
RRM
V
R
= 0.8 • V
RRM
V
R
= 0.8 • V
RRM
T
VJ
T
VJ
T
VJ
T
VJ
= 125°C
= 25°C
= 125°C
= 25°C
T
case
= 25°C
50/60 Hz, RMS t = 1 min
I
ISOL
£
1 mA
t=1s
Mounting torque (M5)
Terminal connection torque (M5)
Creep distance on surface
Strike distance through air
Maximum allowable acceleration
Features
International standard package
with DCB ceramic base plate
Planar passivated chips
Short recovery time
Low switching losses
Soft recovery behaviour
Isolation voltage 3600 V~
UL registered E 72873
280
3000
3600
2.5-4/22-35 Nm/lb.in.
2.5-4/22-35 Nm/lb.in.
12.7
9.6
50
90
mm
mm
m/s
2
g
Applications
Antiparallel diode for high frequency
switching devices
Free wheeling diode in converters
and motor control circuits
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
q
q
q
q
q
q
q
q
Characteristic Values (per diode)
typ.
max.
2
0.5
34
1.36
1.55
2.05
2.09
1.01
2.85
0.550
0.450
T
VJ
= 100°C
T
VJ
= 25°C
T
VJ
= 100°C
250
300
14
21
mA
mA
mA
V
V
V
V
V
mW
K/W
K/W
ns
A
A
q
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Dimensions in mm (1 mm = 0.0394")
V
F
For power-loss calculations only
T
VJ
= 125°C
DC current
DC current
I
F
= 100 A
V
R
= 300 V
-di/dt = 200 A/ms
x
I
FAV
rating includes reverse blocking losses at T
VJM
, V
R
= 0.6 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-2
749
MEA 95-06 DA MEE 95-06 DA
MEK 95-06 DA
200
A
175
I
F
150
125
100
75
50
25
0
0.0
0
10
A/
m
s 1000
-di
F
/dt
1
10
0
0
200
400
4
µC
Q
r
3
T
VJ
= 100°C
V
R
= 300V
I
RM
60
A
T
VJ
= 100°C
V
R
= 300V
50
40
T
VJ
=150°C
T
VJ
=100°C
T
VJ
=25°C
2
I
F
=190A
I
F
= 95A
I
F
=47.5A
I
F
=190A
I
F
= 95A
I
F
=47.5A
30
20
0.5
1.0
1.5 V
V
F
2.0
100
600 A/
m
s 1000
800
-di
F
/dt
Fig. 1 Forward current I
F
versus
voltage drop V
F
per leg
2.0
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
250
ns
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
50
A
40
V
FR
1.0
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
I
F
= 150A
t
fr
µs
V
FR
1.5
K
f
1.0
Q
r
I
RM
t
rr
200
0.8
t
fr
0.6
I
F
=190A
I
F
= 95A
I
F
=47.5A
150
30
20
0.5
100
10
0.4
0.2
0.0
0
50
100
T
VJ
°C 150
50
0
200
400
600 A/
m
s 1000
800
-di
F
/dt
0
0
200
400
600 800
di
F
/dt
0.0
1000
A/
m
s
Fig. 4 Dynamic parameters Q
r
, I
RM
versus junction temperature T
VJ
0.6
K/W
0.5
0.4
Z
thJH
0.3
0.2
0.1
0.0
0.001
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Constants for Z
thJH
calculation:
i
1
2
3
4
0.01
0.1
1s
10
t
R
thi
(K/W)
0.037
0.138
0.093
0.282
t
i
(s)
0.002
0.134
0.25
0.274
Fig. 7 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
2-2
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