CPV363M4KPbF
www.vishay.com
Vishay Semiconductors
IGBT SIP Module
(Short Circuit Rated Ultrafast IGBT)
FEATURES
• Short circuit rated ultrafast: optimized for high
speed (see fig. 1 for current vs. frequency curve),
and short circuit rated to 10 μs at 125 °C,
V
GE
= 15 V
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
• HEXFRED
®
soft ultrafast diodes
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
IMS-2
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
V
CES
I
RMS
per phase (1.94 kW total)
with T
C
= 90 °C
T
J
Supply voltage
Power factor
Modulation depth (see fig. 1)
V
CE(on)
(typical)
at I
C
= 6.0 A, 25 °C
Speed
Package
Circuit
600 V
6.7 A
RMS
125 °C
360 V
DC
0.8
115 %
1.72 V
8 kHz to 30 kHz
SIP
Three phase inverter
DESCRIPTION
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current, each IGBT
SYMBOL
V
CES
I
C
T
C
= 25 °C
T
C
= 100 °C
Repetitive rating; V
GE
= 20 V, pulse width
limited by maximum junction temperature
See fig. 20
V
CC
= 80 % (V
CES
), V
GE
= 20 V,
L = 10 μH, R
G
= 22
See fig. 19
T
C
= 100 °C
TEST CONDITIONS
MAX.
600
11
6.0
22
UNITS
V
A
Pulsed collector current
I
CM
A
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Short circuit withstand time
Gate to emitter voltage
Isolation voltage
Maximum power dissipation, each IGBT
Operating junction and
storage temperature range
Soldering temperature
Mounting torque
I
LM
I
F
I
FM
t
SC
V
GE
V
ISOL
P
D
T
J
, T
Stg
22
6.1
22
10
± 20
A
A
A
μs
V
V
RMS
W
Any terminal to case, t = 1 minute
T
C
= 25 °C
T
C
= 100 °C
2500
36
14
-40 to +150
°C
lbf
in
(N
m)
For 10 s, (0.063" (1.6 mm) from case)
6-32 or M3 screw
300
5 to 7
(0.55 to 0.8)
Revision: 10-Jun-15
Document Number: 94485
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CPV363M4KPbF
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each DIODE, one DIODE in conduction
Case to sink, flat, greased surface
Weight of module
SYMBOL
R
thJC
(IGBT)
R
thJC
(DIODE)
R
thCS
(MODULE)
TYP.
-
-
0.10
20
0.7
MAX.
3.5
5.5
-
-
-
g
oz.
°C/W
UNITS
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Temperature coeff. of breakdown voltage
SYMBOL
V
(BR)CES (1)
V
(BR)CES
T
J
TEST CONDITIONS
V
GE
= 0 V, I
C
= 250 μA
V
GE
= 0 V, I
C
= 1.0 mA
I
C
= 6.0 A
Collector to emitter saturation voltage
V
CE(on)
I
C
= 11 A
I
C
= 6.0 A, T
J
= 150 °C
Gate threshold voltage
Temperature coeff. of threshold voltage
Forward transconductance
Zero gate voltage collector current
V
GE(th)
V
GE(th)
/T
J
g
fe (2)
I
CES
V
CE
= V
GE
, I
C
= 250 μA
V
CE
= 100 V, I
C
= 12 A
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C
Diode forward voltage drop
Gate to emitter leakage current
Notes
(1)
Pulse width
80 μs, duty factor
0.1 %
(2)
Pulse width 5.0 μs; single shot
V
FM
I
GES
I
C
= 12 A
I
C
= 12 A, T
J
= 150 °C
V
GE
= ± 20 V
See fig. 13
V
GE
= 15 V
See fig. 2, 5
MIN.
600
-
-
-
-
3.0
-
3.0
-
-
-
-
-
TYP.
-
0.45
1.72
2.00
1.60
-
- 13
6.0
-
-
1.4
1.3
-
MAX.
-
-
2.10
-
-
6.0
-
-
250
2500
1.7
1.6
± 100
V
nA
mV/°C
S
μA
V
UNITS
V
V/°C
Revision: 10-Jun-15
Document Number: 94485
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CPV363M4KPbF
www.vishay.com
Vishay Semiconductors
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Short circuit withstand time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse recovery
current
Diode reverse recovery charge
Diode peak rate of fall of recovery
during t
b
SYMBOL
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
SC
t
d(on)
t
r
t
d(off)
t
f
E
ts
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
dI
(rec)M
/dt
V
CC
= 360 V, T
J
= 125 °C
V
GE
= 15 V, R
G
= 23
,
V
CPK
< 500 V
T
J
= 150 °C
I
C
= 6.0 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 23
Energy losses include “tail” and
diode reverse recovery
See fig. 10, 11, 18
V
GE
= 0 V
V
CC
= 30 V
ƒ = 1.0 MHz
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
See fig. 14
See fig. 15
See fig. 16
See fig. 17
See fig. 7
T
J
= 25 °C
I
C
= 6.0 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 23
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 18
I
C
= 6 A
V
CC
= 400 V
See fig. 8
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
-
-
-
-
-
-
-
I
F
= 12 A
V
R
= 200 V
dI/dt = 200 A/μs
-
-
-
-
-
TYP.
61
7.4
27
55
24
107
92
0.28
0.10
0.39
-
54
24
161
244
0.60
740
100
9.3
42
80
3.5
5.6
80
220
180
120
MAX.
91
11
40
-
-
160
140
-
-
0.50
-
-
-
-
-
-
-
-
-
60
120
6.0
10
180
600
-
-
ns
A
nC
A/μs
pF
mJ
ns
μs
mJ
ns
nC
UNITS
Revision: 10-Jun-15
Document Number: 94485
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CPV363M4KPbF
www.vishay.com
Vishay Semiconductors
3.50
12
10
8
2.33
6
1.75
4
1.17
2
0.58
0
0.1
0.00
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of Fundamental)
100
12
I
C
, Collector-to-Emitter Current (A)
T
J
=
25
o
C
T
J
= 150
o
C
Maximum DC Collector Current (A)
9
10
6
1
3
0.1
V
GE
= 15V
20μs PULSE WIDTH
1
10
0
25
50
75
100
125
150
V
CE
, Collector-to-Emitter Voltage (V)
T
C
, Case Temperature (°C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Maximum Collector Current vs. Case Temperature
100
3.0
V
CE
, Collector-to-Emitter Voltage(V)
I
C
, Collector-to-Emitter Current (A)
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 12A
T
J
= 150 C
10
o
2.0
T
J
= 25 C
1
o
I
C
=
I
C
=
Total Output Power (kW)
V
GE
= 15V
6A
3A
LOAD CURRENT (A)
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
2.92
0.1
5
10
V
CC
= 50V
5μs PULSE WIDTH
15
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
V
GE
, Gate-to-Emitter Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig. 3 - Typical Transfer Characteristics
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Revision: 10-Jun-15
Document Number: 94485
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CPV363M4KPbF
www.vishay.com
Vishay Semiconductors
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
P
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/t
2
DM
t
1
t
2
0.01
0.00001
2. Peak T
J
= P
DM
x Z
thJC
+ T C
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
1500
1200
900
Cies
Total Switching Losses (mJ)
100
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
1.0
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
0.8
I
C
= 6.0A
C, Capacitance (pF)
0.6
600
0.4
300
Coes
Cres
0.2
0
1
10
0.0
0
10
20
30
40
50
V
CE
, Collector-to-Emitter Voltage (V)
R
R
, Gate Resistance (Ω)
G
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
20
V
GE
, Gate-to-Emitter Voltage (V)
V
CC
= 400V
I
C
= 6.0A
10
R
G
=
10Ω
23
Ω
V
GE
= 15V
V
CC
= 480V
12
Total Switching Losses (mJ)
16
I
C
= 12 A
1
8
I
C
= 6 A
4
I
C
= 3 A
0
0
20
40
60
80
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
Q
G
, Total Gate Charge (nC)
T
J
, Junction Temperature (
°
C )
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 10 - Typical Switching Losses vs. Junction Temperature
Revision: 10-Jun-15
Document Number: 94485
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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