a. Surface mounted on FR4 board, power applied for t
10 s.
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
Limit
60
± 20
330
240
650
250
130
500
- 55 to 150
mW
°C/W
°C
mA
Unit
V
Document Number: 71331
S10-2687-Rev. F, 22-Nov-10
www.vishay.com
1
Si1022R
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 10 µA
V
DS
= V
GS
, I
D
= 0.25 mA
V
DS
= 0 V, V
GS
= ± 10 V
T
J
= 85 °C
V
DS
= 0 V, V
GS
= ± 5 V
V
DS
= 50 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
T
J
= 85 °C
V
DS
= 60 V, V
GS
= 0 V
On-State Drain Current
a
I
D(on)
V
DS
= 10 V, V
GS
= 4.5 V
V
DS
= 7.5 V, V
GS
= 10 V
V
GS
= 4.5 V, I
D
= 200 mA
Drain-Source On-State Resistance
a
R
DS(on)
T
J
= 125 °C
V
GS
= 10 V, I
D
= 500 mA
T
J
= 125 °C
Forward Transconductance
Diode Forward Voltage
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Switching
b, c
Turn-On Time
Turn-Off Time
b
a
Symbol
Test Conditions
Min.
60
1
Typ.
Max.
Unit
2.5
± 150
± 500
± 20
10
100
1
V
nA
µA
mA
500
800
3.0
5.0
1.25
2.25
100
1.3
30
g
fs
V
SD
C
iss
C
oss
C
rss
Q
g
t
(on)
t
(off)
V
DS
= 10 V, I
D
= 200 mA
V
GS
= 0 V, I
S
= 200 mA
mS
V
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 10 V, I
D
= 250 mA, V
GS
= 4.5 V
V
DD
= 30 V, R
L
= 150
,
I
D
= 200 mA, V
GEN
= 10 V, R
g
= 10
6
2.5
0.6
25
35
pF
nC
ns
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71331.
www.vishay.com
4
Document Number: 71331
S10-2687-Rev. F, 22-Nov-10
Package Information
www.vishay.com
Vishay Siliconix
SC-75A: 3 Leads
L2
D
e2
B1(b1)
1
2
D
A
2X
e1
3
E/2
1
2
E1
E
1
1
bbb
1
2
D
C
B
B
2X
bbb C
3
4
B
e3
D
D
2X
B1
b1
With Tin Planting
c1
Base Metal
A2
2XB1
ddd
M
C
A– B
Section B-B
5
A
D
C
4X
Seating Plane
A1
D
DWG: 5868
Notes
Dimensions in millimeters will govern.
1.Dimension D does not include mold flash, protrusions or gate
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
2.Dimensions D and E1 are determined at the outmost extremes of
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interlead flash, but including any mismatch between the top
and bottom of the plastic body.
3.Datums A, B and D to be determined 0.10 mm from the lead tip.
4.Terminal positions are shown for reference only.
5.These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
DIM.
A
A1
A2
B1
b1
c
c1
D
E
DIMENSIONS
aaa
bbb
ccc
ddd
TOLERANCES
0.10
0.10
0.10
0.10
E1
e1
e2
e3
L
L1
L2
q
q1
0°
4°
0.15
MILLIMETERS
MIN.
-
0.00
0.65
0.19
0.17
0.13
0.10
1.48
1.50
0.66
NOM.
-
-
0.70
-
-
-
-
1.575
1.60
0.76
0.50 BSC
1.00 BSC
0.50 BSC
0.205
0.40 ref.
0.15 BSC
-
-
8°
10°
0.30
MAX.
0.80
0.10
0.80
0.24
0.21
0.15
0.12
1.68
1.70
0.86
1, 2
5
5
1, 2
5
NOTE
C15-1445-Rev. F, 23-Nov-15
Document Number: 71348
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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