StrongIRFET™
IRFS7730-7PPbF
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
Benefits
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
max
I
D (Silicon Limited)
75V
1.70m
2.00m
269A
240A
G
S
I
D (Package Limited)
G
Gate
D
Drain
S
Source
Base Part Number
IRFS7730-7PPbF
Package Type
D2Pak-7PIN
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Complete Part Number
IRFS7730-7PPbF
IRFS7730TRL7PP
)
RDS(on), Drain-to -Source On Resistance (m
8
ID = 100A
6
ID, Drain Current (A)
300
Limited By Package
250
TJ = 125°C
4
200
150
100
50
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
2
TJ = 25°C
0
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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November 7, 2014
Absolute Maximum Rating
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
IRFS7730-7PPbF
Max.
269
190
240
990
375
2.5
± 20
-55 to + 175
300
Max.
464
897
See Fig 15, 16, 23a, 23b
Typ.
–––
–––
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ.
–––
40
1.70
2.20
–––
–––
–––
–––
–––
1.9
Max.
0.40
40
Units
mJ
A
mJ
Units
°C/W
Units
A
W
W/°C
V
°C
Avalanche Characteristics
Symbol
Parameter
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Junction-to-Ambient
R
JA
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– mV/°C Reference to 25°C, I
D
= 1mA
2.00 m V
GS
= 10V, I
D
= 100A
––– m V
GS
= 6.0V, I
D
= 50A
3.7
V
V
DS
= V
GS
, I
D
= 250µA
1.0
µA V
DS
= 75 V, V
GS
= 0V
150
V
DS
= 75V,V
GS
= 0V,T
J
=125°C
100
nA V
GS
= 20V
-100
V
GS
= -20V
–––
Notes:
Calculated
continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A.
Note that current limitations arising from heating of the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140)
Repetitive
rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 93µH, R
G
= 50, I
AS
= 100A, V
GS
=10V.
I
SD
100A, di/dt
1575A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 42A, V
GS
=10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.please refer to application note
to AN-994:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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November 7, 2014
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
223
–––
–––
–––
–––
–––
–––
–––
IRFS7730-7PPbF
Typ. Max. Units
Conditions
––– –––
S V
DS
= 10V, I
D
=100A
285 428
I
D
= 100A
62
–––
V
DS
= 38V
nC
86
–––
V
GS
= 10V
199 –––
20
–––
V
DD
= 38V
I
D
= 100A
90
–––
ns
182 –––
R
G
= 2.7
V
GS
= 10V
91
–––
V
GS
= 0V
V
DS
= 25V
pF
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
V
GS
= 0V, V
DS
= 0V to 60V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
–––
––– 13970 –––
––– 1135 –––
––– 720 –––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
1048
1283
–––
–––
Diode Characteristics
Typ. Max. Units
––– 269
A
–––
–––
11
42
49
63
88
2.4
990
1.2
–––
–––
–––
–––
–––
–––
V
D
G
S
T
J
= 25°C,I
S
= 100A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
=100A,V
DS
= 75V
T
J
= 25°C
V
DD
= 64V
ns
T
J
= 125°C
I
F
= 100A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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© 2014 International Rectifier
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November 7, 2014
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFS7730-7PPbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
1000
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
4.5V
10
100
4.5V
60µs
PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
0.1
1
60µs PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
3.0
ID = 100A
2.5
VGS = 10V
ID, Drain-to-Source Current(A)
100
TJ = 175°C
2.0
10
TJ = 25°C
1.5
1
VDS = 25V
0.1
2.0
3.0
4.0
5.0
6.0
7.0
VGS, Gate-to-Source Voltage (V)
1.0
60µs
PULSE WIDTH
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 100A
VDS = 60V
VDS = 38V
VDS = 15V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
VDS , Drain-to-Source Voltage (V)
100
0
50
100
150
200
250
300
350
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs.
Drain-to-Source Voltage
4
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© 2014 International Rectifier
Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
Submit Datasheet Feedback
November 7, 2014
1000
1000
ISD, Reverse Drain Current (A)
IRFS7730-7PPbF
ID, Drain-to-Source Current (A)
1msec
100
Limited by
package
OPERATION
IN THIS
AREA
LIMITED BY
RDS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
100µsec
100
TJ = 175°C
10
TJ = 25°C
10
1
10msec
DC
1
VGS = 0V
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
0.1
0.01
10
VDS, Drain-toSource Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
95
Id = 1.0mA
Fig 10.
Maximum Safe Operating Area
3.0
2.5
90
2.0
Energy (µJ)
85
1.5
1.0
80
0.5
75
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
0.0
-10
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m)
Fig 12.
Typical C
oss
Stored Energy
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Fig 13.
Typical On-Resistance vs. Drain Current
5
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Submit Datasheet Feedback
November 7, 2014
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