l
RoHs Compliant Containing No Lead and Bromide
Typical values (unless otherwise specified)
l
Integrated Monolithic Schottky Diode
V
DSS
V
GS
R
DS(on)
R
DS(on)
l
Low Profile (<0.7 mm)
25V max ±16V max 1.2m@ 10V 1.6m@ 4.5V
l
Dual Sided Cooling Compatible
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
l
Low Package Inductance
25nC
8.5nC
2.5nC
36nC
29nC
1.6V
l
Optimized for High Frequency Switching
l
Ideal for CPU Core DC-DC Converters
l
Optimized for Sync. FET socket of Sync. Buck Converter
l
Low Conduction and Switching Losses
l
Compatible with existing Surface Mount Techniques
l
100% Rg tested
ISOMETRIC
MX
l
Footprint compatible to DirectFET
™
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
DirectFET
®
plus
MOSFET with Schottky Diode
IRF6893MPbF
IRF6893MTRPbF
PD - 97761
Description
The IRF6893MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6893MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6893MPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
Parameter
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
25
±16
29
23
168
230
370
23
A
mJ
A
VGS, Gate-to-Source Voltage (V)
5
Typical RDS(on) (m)
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
4
3
2
1
0
0
2
4
6
8
10
12
T J = 25°C
T J = 125°C
ID = 29A
ID= 23A
VDS= 20V
VDS= 13V
VDS= 5.0V
14
16
10
20
30
40
50
60
70
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 1.4mH, R
G
= 50, I
AS
= 23A.
www.irf.com
1
02/22/12
IRF6893MTRPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
V
DSS
/T
J
R
DS(on)
V
GS(th)
V
GS(th)
/T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
1.2
1.6
1.6
-3.9
–––
–––
–––
–––
25
5.9
2.5
8.5
8.1
11
29
0.47
18
83
19
33
3480
1140
210
Max.
–––
–––
1.6
2.1
2.1
–––
250
100
-100
–––
38
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
V/°C
m
V
mV/°C
μA
nA
S
Conditions
V
GS
= 0V, I
D
= 1.0mA
I
D
= 10mA ( 25°C-125°C)
V
GS
= 10V, I
D
= 29A
V
GS
= 4.5V, I
D
= 23A
V
DS
= V
GS
, I
D
= 100μA
V
DS
= V
GS
, I
D
= 10mA
V
DS
= 20V, V
GS
= 0V
V
GS
= 16V
V
GS
= -16V
V
DS
=13V, I
D
= 23A
V
DS
= 13V
V
GS
= 4.5V
I
D
= 23A
i
i
nC
nC
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
I
D
= 23A
R
G
= 1.8
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
ns
i
pF
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
22
36
Max.
126
230
0.75
33
54
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
G
S
Ãg
V
ns
nC
T
J
= 25°C, I
S
= 23A, V
GS
= 0V
T
J
= 25°C, I
F
=23A
di/dt = 400A/μs
i
i
Notes:
Pulse width
400μs; duty cycle
2%.
2
www.irf.com
IRF6893MTRPbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Parameter
Max.
2.1
1.3
69
270
-40 to + 150
Units
W
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
°C
Thermal Resistance
R
JA
R
JA
R
JA
R
JC
R
J-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
e
j
k
fl
Parameter
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
60
–––
–––
1.8
–––
Units
°C/W
k
W/°C
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.1
1
10
100
1000
0.001
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Notes:
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
R
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
www.irf.com
3
IRF6893MTRPbF
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
BOTTOM
100
BOTTOM
2.5V
10
10
2.5V
1
0.1
1
60μs PULSE WIDTH
Tj = 25°C
60μs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
10
100
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 15V
60μs
PULSE WIDTH
Typical RDS(on) (Normalized)
Fig 5.
Typical Output Characteristics
2.0
ID = 29A
V GS = 10V
1.5
V GS = 4.5V
ID, Drain-to-Source Current (A)
100
T J = 150°C
T J = 25°C
T J = -40°C
10
1.0
1
0.1
1
2
3
4
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Fig 7.
Normalized On-Resistance vs. Temperature
6
5
Top
VGS
3.5V
4.5V
5.0V
7.0V
8.0V
10V
12V
15V
T J = 25°C
Typical RDS(on) ( m)
C oss = C ds + C gd
C, Capacitance(pF)
10000
Ciss
4
Bottom
Coss
1000
Crss
3
2
1
0
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
4
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
www.irf.com
IRF6893MTRPbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100
1msec
100μsec
10
10
10msec
DC
T J = 150°C
T J = 25°C
T J = -40°C
1
1
0.1
VGS = 0V
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
1
10
100
0.01
VDS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
200
Fig 11.
Maximum Safe Operating Area
Typical VGS(th) Gate threshold Voltage (V)
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
ID = 10mA
ID, Drain Current (A)
150
100
50
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 12.
Maximum Drain Current vs. Case Temperature
1600
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
1.5A
2.2A
BOTTOM 23A
1400
1200
1000
800
600
400
200
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
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5
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