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MA4E2508M-1112

产品描述HDMI, Displayport u0026 DVI Connectors .5MM RA SMT RCPT
产品类别分立半导体    二极管   
文件大小222KB,共5页
制造商MACOM
官网地址http://www.macom.com
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MA4E2508M-1112概述

HDMI, Displayport u0026 DVI Connectors .5MM RA SMT RCPT

MA4E2508M-1112规格参数

参数名称属性值
厂商名称MACOM
包装说明R-XBCC-N2
针数2
制造商包装代码CASE 1112
Reach Compliance Codecompliant
ECCN代码EAR99
配置COMMON BIPOLAR TERMINAL, 2 ELEMENTS
最大二极管电容0.24 pF
二极管元件材料SILICON
二极管类型MIXER DIODE
频带KU BAND
JESD-30 代码R-XBCC-N2
元件数量2
端子数量2
最大工作频率18 GHz
最高工作温度175 °C
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式CHIP CARRIER
最大功率耗散0.05 W
脉冲输入最大功率0.1 W
认证状态Not Qualified
表面贴装YES
技术SCHOTTKY
端子形式NO LEAD
端子位置BOTTOM
肖特基势垒类型MEDIUM BARRIER

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MA4E2508 Series
SURMOUNT
TM
Low, Medium, & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
Features
Extremely Low Parasitic Capacitance &
Inductance
Surface Mountable in Microwave Circuits, No
Wirebonds Required
Rugged HMIC Construction with Polyimide
Scratch Protection
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300°C,
16 hours)
Rev. V5
Case Style 1112
A
A
B
Description
The MA4E2508 SURMOUNT
TM
Anti-Parallel Diode
Series are Silicon Low, Medium, & High Barrier
Schottky Devices fabricated with the patented
Heterolithic Microwave Integrated Circuit (HMIC)
process. HMIC circuits consist of Silicon pedestals
which form diodes or via conductors embedded in a
glass dielectric, which acts as the low dispersion,
low loss, microstrip transmission medium. The
combination of silicon and glass allows HMIC
devices to have excellent loss and power dissipation
characteristics in a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of a
beam lead device coupled with the superior
mechanical performance of a chip. The SurMount
structure employs very low resistance silicon vias to
connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic dis-
charge than conventional beam lead Schottky
diodes.
The multi-layer metalization employed in the
fabrication of the Surmount Schottky junctions
includes a platinum diffusion barrier, which permits
all devices to be subjected to a 16-hour
non-operating stabilization bake at 300°C.
The “0502” outline allows for Surface Mount
placement and multi- functional polarity orientations.
C
D
E
D
Case Style 1112
INCHES
DIM
MIN.
A
B
C
D Sq.
E
0.0445
0.0169
0.0040
0.0128
0.0128
MAX.
0.0465
0.0189
0.0080
0.0148
0.0148
MIN.
1.130
0.430
0.102
0.325
0.325
MAX.
1.180
0.480
0.203
0.375
0.375
MILLIMETERS
Equivalent Circuit
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

 
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