VS-8EWF..SPbF Soft Recovery Series
www.vishay.com
Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 8 A
FEATURES
Base
cathode
+
2
2
3
1
1
Anode -
3
- Anode
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-252AA (D-PAK)
APPLICATIONS
• Output rectification and freewheeling diode in inverters,
choppers and converters
• Input rectifications where severe
conducted EMI should be met
restrictions
on
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Diode variation
Snap factor
TO-252AA (D-PAK)
8A
200 V, 400 V, 600 V
1.2 V
150 A
55 ns
150 °C
Single die
0.5
DESCRIPTION
The VS-8EWF..SPbF fast soft recovery rectifier series has
been optimized for combined short reverse recovery time,
low forward voltage drop and low leakage current.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
This series is designed and qualified for industrial level.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
8 A, T
J
= 25 °C
1 A, 100 A/μs
Range
CHARACTERISTICS
Sinusoidal waveform
VALUES
8
200 to 600
150
1.2
55
-40 to +150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
VS-8EWF02SPbF
VS-8EWF04SPbF
VS-8EWF06SPbF
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
200
400
600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
300
500
700
3
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 96 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
8
125
150
78
110
1100
A
2
s
A
2
s
A
UNITS
Revision: 16-Jan-17
Document Number: 94108
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWF..SPbF Soft Recovery Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
8 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
VALUES
1.2
16
1.13
0.1
V
R
= Rated V
RRM
mA
3
UNITS
V
m
V
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 8 A
pk
25 A/μs
T
J
= 25 °C
VALUES
200
2.6
0.25
0.5
UNITS
ns
A
μC
di
dt
I
rr
I
FM
t
a
t
rr
t
b
Q
rr
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient (PCB mount)
Approximate weight
0.03
Marking device
Case style TO-252AA (D-PAK)
8EWF06S
oz.
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
(1)
TEST CONDITIONS
VALUES
-40 to +150
UNITS
°C
DC operation
2.5
°C/W
50
1
g
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Revision: 16-Jan-17
Document Number: 94108
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWF..SPbF Soft Recovery Series
www.vishay.com
Vishay Semiconductors
Maximum Average F
orward Power Los (W)
s
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
Average Forward Current (A)
8E
WF..SS
eries
T
J
= 150°C
DC
180°
120°
90°
60°
30°
Maximum Allowable Case T
emperature (°C)
150
140
130
120
110
100
90
80
70
60
0
1
2
3
4
5
6
7
8
9
Average Forward Current (A)
30°
60°
90°
120°
180°
Conduction Angle
8EWF Series
..S
R
thJC
(DC) = 2.5 °C/ W
RMSLimit
Conduction Period
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
Maximum Allowable Case T
emperature (°C)
150
140
130
120
110
100
90
80
70
0
2
4
6
8
10
12
14
Average Forward Current (A)
Conduction Period
140
8EWF..S S
eries
R
thJC
(DC) = 2.5 °C/ W
130
120
Peak Half
Sine
Wave
Forward Current (A)
110
100
90
80
70
60
50
At any rated load condition and with
rated Vrrm applied following
surge.
Initial Tj = 150°C
at 60 Hz 0.0083s
at 50 Hz 0.0100s
30°
60°
90°
120°
180°
DC
40
30
1
VS-8EWF..S ..
Series
10
Number of Equal Amplitude Half Cycle
Current Pulses (N)
100
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average Forward Power Loss (W)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
Average Forward Current (A)
Conduction Angle
170
180°
120°
90°
60°
30°
RMS Limit
150
Peak Half
Sine
Wave
Forward Current (A)
130
110
90
70
50
30
10
0.01
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
8E
WF..SS
eries
T
J
= 150°C
VS-8EWF..S ..
Series
0.1
1
10
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 16-Jan-17
Document Number: 94108
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWF..SPbF Soft Recovery Series
www.vishay.com
Vishay Semiconductors
1.4
Typical Reverse R
ecovery Charge - Qrr (µC)
1.2
1
10 A
100
Ins
tantaneous F
orward Current (A)
8EWF..S S
eries
T
J
= 25 °C
I
FM
= 20 A
0.8
8A
10
T
J
25°C
=
T
J
= 150°C
0.6
0.4
0.2
0
0
40
80
120
160
5A
2A
1A
8E ..SS
WF
eries
1
0.5
1
1.5
2
2.5
3
200
Instantaneous Forward Voltage (V)
Rate Of Fall Of F
orward Current - dI/ dt (A/ µs
)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
0.4
Typical R
everse Recovery Charge - Qrr (µC)
Typical R
everse R
ecovery T
ime - T (µs)
rr
8EWF..SS
eries
T
J
= 25 °C
0.3
I
FM
= 20 A
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
40
80
120
160
200
Rate Of Fall Of F
orward Current - dI/ dt (A/ µs)
2A
1A
5A
8EWF..SS
eries
T
J
= 150 °C
I
FM
= 20 A
10 A
8A
0.2
10 A
8A
5A
0.1
2A
1A
0
0
40
80
120
160
200
R
ate Of F Of Forward Current - dI/ dt (A/ µs
all
)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
0.4
16
Typical R
everse R
ecovery Current - Irr (A)
8E
WF..S S
eries
T
J
= 150 °C
Typical
R verse Recovery T
e
ime - T (µs)
rr
14
12
8EWF..SS
eries
T
J
= 25 °C
I
FM
= 20 A
10 A
8A
0.3
I
FM
= 20 A
10
5A
0.2
10 A
8A
5A
8
2A
6
4
2
0
0
40
80
120
160
200
Rate Of F Of F
all
orward Current - dI/ dt (A/ µs)
1A
0.1
2A
1A
0
0
40
80
120
160
200
R
ate Of Fall Of Forward Current - dI/ dt (A/ µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
Revision: 16-Jan-17
Document Number: 94108
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWF..SPbF Soft Recovery Series
www.vishay.com
Vishay Semiconductors
20
Typical
Reverse R
ecovery Current - Irr (A)
18
16
14
12
10
8
6
4
2
0
0
8EWF..SS
eries
T
J
= 150 °C
I
FM
= 20 A
10 A
8A
5A
2A
1A
40
80
120
160
200
R
ate Of Fall Of F
orward Current - dI/ dt (A/ µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
T
ransient Thermal Impedance Z
thJC
(°C/ W)
10
S
teady S
tate Value
(DC Operation)
1
D=
D=
D=
D=
D=
0.50
0.33
0.25
0.17
0.08
S
ingle Pulse
8EWF S
..S eries
0.1
0.0001
0.001
0.01
0.1
S
quare Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 16-Jan-17
Document Number: 94108
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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