c. Maximum under Steady State conditions is 110 °C/W.
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
52
35
Maximum
62.5
42
Unit
°C/W
Document Number: 70335
S09-0394-Rev. B, 09-Mar-09
www.vishay.com
1
Si4803DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 3.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 1 A, V
GS
= 0 V
- 0.75
25
11.25
9
16
T
C
= 25 °C
- 2.6
- 20
- 1.2
38
17
A
V
ns
nC
ns
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
- 10 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 3.5 A
V
GS
= - 2.5 V, I
D
= - 3 A
V
DS
= - 10 V, I
D
= - 3.5 A
Min.
- 20
Typ.
Max.
Unit
V
- 20
3
- 0.6
- 1.5
± 100
-1
- 10
- 10
0.052
0.085
10
480
0.065
0.105
mV/°C
V
nA
µA
A
Ω
S
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 5 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 5 A
f = 1 MHz
V
DD
= - 10 V, R
L
= 2
Ω
I
D
≅
- 5 A, V
GEN
= - 10 V, R
g
= 1
Ω
132
55
9.7
4.5
1
1
7.5
4
10
16
8
20
15
8
20
30
16
35
90
30
20
14.5
7
pF
nC
Ω
ns
V
DD
= - 10 V, R
L
= 2
Ω
I
D
≅
- 5 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
50
16
10
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70335
S09-0394-Rev. B, 09-Mar-09
Si4803DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
V
GS
= 5 V thru 4 V
3.5 V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
1.6
2.0
18
3V
1.2
T
C
= 25 °C
0.8
12
2.5 V
6
2V
0.4
T
C
= 125 °C
T
C
= - 55 °C
0
0
1
2
3
4
5
0.0
0.0
0.6
1.2
1.8
2.4
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.20
650
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.16
C - Capacitance (pF)
520
C
iss
0.12
V
GS
= 2.5
V
0.08
V
GS
= 4.5
V
0.04
390
260
C
oss
130
C
rss
0.00
0
2
4
6
8
10
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 5 A
V
GS
- Gate-to-Source Voltage (V)
8
R
DS(on)
- On-Resistance
(Normalized)
1.5
1.7
I
D
= 3.5 A
Capacitance
V
GS
= 4.5
V
1.3
V
GS
= 2.5
V
1.1
6
V
DS
= 10 V
V
DS
= 5 V
4
V
DS
= 15 V
2
0.9
0
0
2
4
6
8
10
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70335
S09-0394-Rev. B, 09-Mar-09
www.vishay.com
3
Si4803DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.30
I
D
= 3.5 A
0.25
I
S
- Source Current (A)
10
T
J
= 150 °C
1
R
DS(on)
- On-Resistance (Ω)
0.20
0.15
T
J
= 25 °C
0.10
25 °C
125 °C
0.1
0.05
0.01
0.0
0.3
0.6
0.9
1.2
1.5
V
SD
- Source-to-Drain
Voltage
(V)
0.00
0
1
2
3
4
5
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.4
50
On-Resistance vs. Gate-to-Source Voltage
0.3
I
D
= 250 µA
V
GS(th)
Variance (V)
0.2
Power (W)
30
I
D
= 5 mA
40
0.1
20
0.0
10
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
1
10 ms
100 ms
0.1
1 s, 10 s
DC
T
A
= 25 °C
Single Pulse
0.01
0.001
0.1
*
V
GS
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
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4
Document Number: 70335
S09-0394-Rev. B, 09-Mar-09
Si4803DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
5.5
4.4
I
D
- Drain Current (A)
3.3
2.2
1.1
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
4.0
1.5
3.2
1.2
Power (W)
Power (W)
2.4
0.9
1.6
0.6
0.8
0.3
0.0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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