NSS20200LT1G,
NSV20200LT1G
20 V, 4.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
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−20
VOLTS
4.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
65 mW
SOT−23 (TO−236)
CASE 318
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING DIAGRAM
VC M
G
G
1
VC = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
NSS20200LT1G
NSV20200LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
October, 2016
−
Rev. 5
1
Publication Order Number:
NSS20200L/D
NSS20200LT1G, NSV20200LT1G
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
−20
−20
−7.0
−2.0
−4.0
HBM Class 3B
MM Class C
Unit
Vdc
Vdc
Vdc
A
A
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
(Single Pulse < 10 sec.)
Junction and Storage Temperature Range
Symbol
P
D
(Note 1)
Max
460
3.7
270
540
4.3
230
710
−55
to +150
Unit
mW
mW/°C
°C/W
R
qJA
(Note 1)
P
D
(Note 2)
mW
mW/°C
°C/W
mW
°C
R
qJA
(Note 2)
P
Dsingle
(Note 3)
T
J
, T
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. FR− 4 @ 100 mm
2
, 1 oz. copper traces.
2. FR− 4 @ 500 mm
2
, 1 oz. copper traces.
3. Thermal response.
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2
NSS20200LT1G, NSV20200LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
=
−10
mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
=
−0.1
mAdc, I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
=
−0.1
mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
=
−20
Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
=
−7.0
Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
=
−10
mA, V
CE
=
−2.0
V)
(I
C
=
−500
mA, V
CE
=
−2.0
V)
(I
C
=
−1.0
A, V
CE
=
−2.0
V)
(I
C
=
−2.0
A, V
CE
=
−2.0
V)
Collector
−Emitter
Saturation Voltage (Note 4)
(I
C
=
−0.1
A, I
B
=
−0.010
A) (Note 5)
(I
C
=
−1.0
A, I
B
=
−0.100
A)
(I
C
=
−1.0
A, I
B
=
−0.010
A)
(I
C
=
−2.0
A, I
B
=
−0.200
A)
Base
−Emitter
Saturation Voltage (Note 4)
(I
C
=
−1.0
A, I
B
=
−0.01
A)
Base
−Emitter
Turn−on Voltage (Note 4)
(I
C
=
−1.0
A, V
CE
=
−2.0
V)
Cutoff Frequency
(I
C
=
−100
mA, V
CE
=
−5.0
V, f = 100 MHz)
Input Capacitance (V
EB
= 0.5 V, f = 1.0 MHz)
Output Capacitance (V
CB
= 3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay (V
CC
=
−15
V, I
C
= 750 mA, I
B1
= 15 mA)
Rise (V
CC
=
−15
V, I
C
= 750 mA, I
B1
= 15 mA)
Storage (V
CC
=
−15
V, I
C
= 750 mA, I
B1
= 15 mA)
Fall (V
CC
=
−15
V, I
C
= 750 mA, I
B1
= 15 mA)
t
d
t
r
t
s
t
f
−
−
−
−
−
−
−
−
60
120
300
130
ns
ns
ns
ns
h
FE
250
250
180
150
−
−
−
−
−
−
100
−
−
−
300
−
−
−0.008
−0.065
−0.100
−0.130
−
−
−
−
−
−
−
−
−
−0.013
−0.090
−0.120
−0.180
−0.900
−0.900
−
330
100
V
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
−20
−20
−7.0
−
−
−
−
−
−
−
−
−
−
−0.1
−0.1
Vdc
Vdc
Vdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
Cibo
Cobo
V
V
MHz
pF
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
5. Guaranteed by design but not tested.
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3
NSS20200LT1G, NSV20200LT1G
0.25
V
CE(sat)
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
0.2
25°C
0.15
−55°C
0.1
0.05
0
V
CE(sat)
= 150°C
0.35
V
CE(sat)
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
IC/IB = 100
0.3
0.25
0.2
0.15
0.1
0.05
0
0.001
0.01
0.1
1.0
10
V
CE(sat)
= 150°C
−55°C
25°C
0.001
0.01
0.1
1.0
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
1.1
150°C (5.0 V)
150°C (2.0 V)
V
BE(sat)
, BASE EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 10
h
FE
, DC CURRENT GAIN
−55°C
25°C
25°C (5.0 V)
25°C (2.0 V)
−55°C
(5.0 V)
−55°C
(2.0 V)
0.001
0.01
0.1
1.0
10
150°C
0.001
0.01
0.1
1.0
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
1.0
V
BE(on)
, BASE EMITTER TURN−ON
VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.001
0.01
0.1
1.0
10
150°C
V
CE
=
−2.0
V
−55°C
25°C
V
CE
, COLLECTOR−EMITTER
VOLTAGE (V)
1.0
0.8
0.6
0.4
0.2
0
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
10 mA
100 mA
V
CE
(V) I
C
= 500 mA
300 mA
0.01
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (A)
I
B
, BASE CURRENT (mA)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
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4
NSS20200LT1G, NSV20200LT1G
350
C
ibo
, INPUT CAPACITANCE (pF)
325
300
275
250
225
200
175
150
125
0
1.0
2.0
3.0
4.0
5.0
6.0
C
ibo
(pF)
C
obo
, OUTPUT CAPACITANCE (pF)
170
C
obo
(pF)
150
130
110
90
70
50
0
2.0
4.0
6.0
8.0
10
12
14
16
V
EB
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
10
Figure 8. Output Capacitance
1 ms
1.0
I
C
(A)
10 ms
0.1
Thermal Limit
0.01
100 ms
1s
0.01
0.1
1.0
V
CE
(V
dc
)
10
100
Figure 9. Safe Operating Area
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5
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