Si4486EY
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
100
R
DS(on)
(Ω)
0.025 at V
GS
= 10 V
0.028 at V
GS
= 6.0 V
I
D
(A)
7.9
7.5
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• 175 °C Maximum Junction Temperature
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
D
SO-8
S
S
S
G
1
2
3
4
Top View
S
Ordering Information:
Si4486EY-T1-E3 (Lead (Pb)-free)
Si4486EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
8
7
6
5
D
D
D
D
G
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
a
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle
≤
1 %)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 85 °C
L = 0.1 mH
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
I
S
P
D
T
J
, T
stg
3.1
3.8
2.3
- 55 to 175
7.9
6.1
40
30
45
1.5
1.8
1.1
mJ
A
W
°C
10 s
100
± 20
5.4
4.2
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
33
70
17
Maximum
40
85
21
°C/W
Unit
Document Number: 71234
S09-1341-Rev. E, 13-Jul-09
www.vishay.com
1
Si4486EY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 3.1 A, dI/dt = 100 A/µs
V
DD
= 50 V, R
L
= 50
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
0.5
V
DS
= 50 V, V
GS
= 10 V, I
D
= 7.9 A
36
10
8.6
1.27
20
10
46
26
50
2.2
40
20
90
50
80
ns
Ω
44
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.9 A
V
GS
= 6.0 V, I
D
= 7.5 A
V
DS
= 15 V, I
D
= 7.9 A
I
S
= 3.1 A, V
GS
= 0 V
40
0.021
0.023
35
0.8
1.2
0.025
0.028
2
± 100
1
20
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
V
GS
= 10 V thru 6 V
32
I
D
- Drain Current (A)
5V
I
D
- Drain Current (A)
32
40
24
24
16
16
T
C
= 150 °C
8
25 °C
8
4V
0
0
1
2
3
4
5
- 55 °C
0
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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Document Number: 71234
S09-1341-Rev. E, 13-Jul-09
Si4486EY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.04
3500
3000
R
DS(on)
- On-Resistance (Ω)
C
iss
0.03
V
GS
= 6.0 V
0.02
C - Capacitance (pF)
2500
2000
1500
1000
500
0.00
0
8
16
24
32
40
0
0
10
20
30
40
50
60
C
rss
C
oss
V
GS
= 10 V
0.01
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
V
DS
= 50 V
I
D
= 7.9 A
8
R
DS(on)
- On-Resistance
2.0
(Normalized)
1.7
1.4
1.1
0.8
0
0
6
12
18
24
30
36
Q
g
- Total Gate Charge (nC)
0.5
- 50
2.6
2.3
V
GS
= 10 V
I
D
= 7.9 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
6
4
2
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
40
0.08
On-Resistance vs. Junction Temperature
R
DS(on)
- On-Resistance (Ω)
I
D
= 7.9 A
0.06
I
S
- Source Current (A)
T
J
= 175 °C
10
0.04
T
J
= 25 °C
0.02
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71234
S09-1341-Rev. E, 13-Jul-09
www.vishay.com
3
Si4486EY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.5
50
40
0.0
V
GS(th)
Variance (V)
I
D
= 250 µA
Power (W)
30
- 0.5
20
- 1.0
10
- 1.5
- 50
- 25
0
25
50
75
100
125
150
175
0
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
0.1
1s
10 s
DC
BVDSS
Limited
10
100
0.01
T
A
= 25 °C
Single Pulse
0.001
0.1
1
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
2. Per Unit Base = R
thJA
= 70 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 71234
S09-1341-Rev. E, 13-Jul-09
Si4486EY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71234.
Document Number: 71234
S09-1341-Rev. E, 13-Jul-09
www.vishay.com
5
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