Operating Temperature Range ........................... -40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................. +300°C
Soldering Temperature (reflow) ....................................... +260°C
Absolute Maximum Ratings
VDDA to GNDA ......................................................-0.3V to +6V
VDDB to GNDB .......................................................-0.3V to +6V
VLDO to GNDB .....................................................-0.3V to +16V
TD1, TD2 to GNDA ..............................................-0.3V to +12V
TXD, DE,
RE
to GNDA ...........................................-0.3V to +6V
RXD to GNDA......................................... -0.3V to (V
DDA
+ 0.3V)
DEM to GNDB ........................................................-0.3V to +6V
A, B to GNDB ...........................................................-8V to +13V
TD1, TD2 Continuous Current ...........................................±1.4A
Short-Circuit Duration (RXD to GNDA, A, B, DEM,
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
(Note 1)
Junction-to-Ambient Thermal Resistance (θ
JA
) ..............71°C/W
Junction-to-Case Thermal Resistance (θ
JC
) ...................23°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
DC Electrical Characteristics
(VDDA - VGNDA = 3.0V to 5.5V, VDDB - VGNDB = 4.5V to 5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at
VDDA - VGNDA = 3.3V, VDDB - VGNDB = 5V, VGNDA = VGNDB, and TA = +25°C.) (Notes 2, 3)
PARAMETER
POWER
Supply Voltage
V
DDA
V
DDB
I
DDA
Supply Current
I
DDB
Undervoltage-Lockout
Threshold
V
UVLOA
V
UVLOB
V
UVHYSTA
V
UVHYSTB
R
O
I
LIM
f
SW
D
tDEAD
TD1/TD2 = low, IOUT = 300mA
4.5V ≤ V
DDA
≤ 5.5V
3.0V ≤ V
DDA
≤ 3.6V
540
485
350
VDDA = 5V, DE = high,
RE
= TXD =
low, RXD unconnected, no bus load,
TD1/TD2 unconnected
DE = high,
RE
= TXD = low, RXD
unconnected, no bus load, VDDB = 5V
RE,
RXD, DE, TXD, V
DDA
rising
TD1/TD2 driver, V
DDA
rising
V
DDB
rising
RE,
RXD, DE, TXD
TD1/TD2 driver
1.50
2.55
2.55
3.0
4.5
4.7
6.3
1.58
2.7
2.7
50
200
200
0.6
785
730
450
50
50
1.5
1300
1170
550
Ω
mA
kHz
%
ns
mV
5.5
5.5
7.7
mA
12.5
1.65
2.85
2.85
V
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Undervoltage-Lockout-
Threshold Hysteresis
TRANSFORMER DRIVER
Output Resistance
TD1, TD2 Current Limit
Switching Frequency
Duty Cycle
Crossover Dead Time
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Maxim Integrated
│
2
MAX14946
2.75kV
RMS
Isolated 500kbps Half-Duplex
RS-485/RS-422 Transceiver with ±30kV ESD
Protection and Integrated Transformer Driver
DC Electrical Characteristics (continued)
(VDDA - VGNDA = 3.0V to 5.5V, VDDB - VGNDB = 4.5V to 5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at
VDDA - VGNDA = 3.3V, VDDB - VGNDB = 5V, VGNDA = VGNDB, and TA = +25°C.) (Notes 2, 3)
PARAMETER
LDO
LDO Supply Voltage
LDO Supply Current
LDO Output Voltage
LDO Current Limit
Load Regulation
Line Regulation
Dropout Voltage
Load Capacitance
LOGIC INTERFACE (TXD, RXD, DE,
RE,
DEM)
Input High Voltage
Input Low Voltage
Input Hysteresis
Input Capacitance
Input Pullup Current
Input Pulldown Current
VIH
VIL
VHYS
CIN
IPU
IPD
RE,
TXD, DE to GNDA
RE,
TXD, DE to GNDA
RE,
TXD, DE to GNDA
RE,
TXD, DE, f = 1MHz
TXD
DE,
RE
RXD to GNDA, IOUT = -4mA
DEM to GNDB, IOUT = -4mA
Output Voltage Low
VOL
RXD to GNDA, IOUT = 4mA
DEM to GNDB, IOUT = 4mA
0V ≤ V
RXD
≤ V
DDA, V
A
- V
B
> -50mV,
RE
= low
0V ≤ V
DEM
≤ V
DDB, DE = high
0V ≤ V
RXD
≤ V
DDA, V
A
- V
B
< -200mV,
RE
= low
0V ≤ V
DEM
≤ V
DDB, DE = low
IOZ
0V ≤ V
RXD
≤ V
DDA,
RE
= high
-1
-42
mA
-42
+40
mA
+40
+1
µA
-10
1.5
VDDA
-0.4
VDDB
-0.4
0.4
0.4
220
2
-4.5
4.5
-1.5
10
0.7 x
VDDA
0.8
V
V
mV
pF
µA
µA
VLDO = 5.68V, ILOAD = 20mA to
40mA
VLDO = 5.68V to 14V, ILOAD = 20mA
VLDO = 4.68V, IDDB = 120mA
Nominal value (Note 5)
1
VLDO
ILDO
VDDB
Relative to GNDB, LDO is on (Note 4)
DE = high, TXD = low, no bus load,
VLDO = 5.5V
4.5
4.68
6.4
5
300
0.19
0.12
100
1.7
1.8
180
10
14
12.9
5.5
V
mA
V
mA
mV/mA
mV/V
mV
µF
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Output Voltage High
VOH
V
V
Short-Circuit Output Pullup
Current
ISH_PU
Short-Circuit Output Pulldown
Current
ISH_PD
Three-State Output Current
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Maxim Integrated
│
3
MAX14946
2.75kV
RMS
Isolated 500kbps Half-Duplex
RS-485/RS-422 Transceiver with ±30kV ESD
Protection and Integrated Transformer Driver
DC Electrical Characteristics (continued)
(VDDA - VGNDA = 3.0V to 5.5V, VDDB - VGNDB = 4.5V to 5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at
VDDA - VGNDA = 3.3V, VDDB - VGNDB = 5V, VGNDA = VGNDB, and TA = +25°C.) (Notes 2, 3)
PARAMETER
DRIVER
RL
= 54Ω, TXD = high or low, DE = high,
Figure 1a
RL
= 100Ω, TXD = high or low, DE = high,
Figure 1a
-7V ≤ V
CM
≤ +12V, Figure 1b
Change in Magnitude of
Differential-Driver Output Voltage
Driver Common-Mode
Output Voltage
Change in Magnitude of
Common-Mode Voltage
Driver Short-Circuit Output
Current
ΔV
OD
VOC
ΔV
OC
RL
= 100Ω or 54Ω, Figure 1b (Note 6)
RL
= 100Ω or 54Ω, Figure 1a
RL
= 100Ω or 54Ω, Figure 1a (Note 6)
GNDB ≤ V
OUT
≤ +12V, output low
(Note 7)
-7V ≤ V
OUT
≤ V
DDB, output high
(Note 7)
(VDDB
- 1V) ≤ V
OUT
≤ +12V,
output low (Note 5, 7)
-7V ≤ V
OUT
≤ +1V, output high
(Note 5, 7)
DE = GNDA,
VDDB = GNDB
or +5.5V
-7V ≤ V
CM
≤ +12V
VCM = 0V
-7V ≤ V
CM
≤ +12V, DE = low
Temperature rising
Human Body Model
IEC 61000-4-2 Air-Gap Discharge
IEC 61000-4-2- Contact Discharge
Human Body Model
96
+160
15
±30
±15
±10
±4
kV
kV
VIN = +12V
VIN = -7V
-100
-200
-125
15
-50
-250
+20
mA
-20
V
DDB
/2
2
3
1.5
5
0.2
3
0.2
+250
mA
V
V
V
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Differential-Driver Output
|VOD|
IOSD
Driver Short-Circuit Foldback
Output Current
RECEIVER
IOSDF
+125
μA
mV
mV
kΩ
°C
°C
Input Current (A and B)
Receiver Differential-Threshold
Voltage
Receiver Input Hysteresis
Receiver Input Resistance
PROTECTION
Thermal-Shutdown Threshold
Thermal-Shutdown Hysteresis
ESD Protection
(A and B Pins to GNDB)
ESD Protection (All Other Pins)
IA,B
VTH
ΔV
TH
RIN
T
SHDN
T
HYST
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Maxim Integrated
│
4
MAX14946
2.75kV
RMS
Isolated 500kbps Half-Duplex
RS-485/RS-422 Transceiver with ±30kV ESD
Protection and Integrated Transformer Driver
Switching Electrical Characteristics
(VDDA - VGNDA = 3.0V to 5.5V, VDDB - VGNDB = 4.5V to 5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at
VDDA - VGNDA = 3.3V, VDDB - VGNDB = 5V, VGNDA = VGNDB, and TA = +25°C.) (Note 5)
PARAMETER
DYNAMIC
Common-Mode Transient
Immunity
Glitch Rejection
DRIVER
Driver Propagation Delay
Differential Driver Output Skew
|tDPLH - tDPHL|
Driver Differential-Output Rise
or Fall Time
Maximum Data Rate
Driver Enable to Output High
Driver Enable to Output Low
Driver Disable Time From Low
Driver Disable Time From High
RECEIVER
Receiver Propagation Delay
Receiver Output Skew
Maximum Data Rate
Receiver Enable to Output
High
Receiver Enable to Output Low
Receiver Disable Time from
Low
Receiver Disable Time from
High
Note 2:
Note 3:
Note
Note
Note
Note
4:
5:
6:
7:
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
CMTI
(Note 8)
TXD, DE, RXD
RL
= 54Ω, C
L = 50pF, Figure 2 and
Figure 3
RL
= 54Ω, C
L = 50pF, Figure 2 and
Figure 3
RL
= 54Ω, C
L = 50pF, Figure 2 and
Figure 3
500
RL
= 500Ω, C
L = 50pF, Figure 4
RL
= 500Ω, C
L = 50pF, Figure 5
RL
= 500Ω, C
L = 50pF, Figure 5
RL
= 500Ω, C
L = 50pF, Figure 4
CL = 15pF, Figure 6 and Figure 7
(Note 9)
CL = 15pF, Figure 6 and Figure 7
(Note 9)
500
R
L
= 1kΩ, C
L
= 15pF, S2 closed,
Figure 8
RL
= 1kΩ, C
L = 15pF, S1 closed,
Figure 8
RL
= 1kΩ, C
L = 15pF, S1 closed,
Figure 8
RL
= 1kΩ, C
L = 15pF, S2 closed,
Figure 8
10
35
17
29
kV/μs
ns
tDPLH, tDPHL
tDSKEW
tLH, tHL
DRMAX
tDZH
tDZL
tDLZ
tDHZ
tRPLH, tRPHL
tRSKEW
DRMAX
tRZH
tRZL
tRLZ
tRHZ
1040
144
900
ns
ns
ns
kbps
2540
2540
140
140
ns
ns
ns
ns
240
34
ns
ns
kbps
20
30
20
20
ns
ns
ns
ns
Note 8:
Note 9:
All devices are 100% production tested at TA = +25°C. Specifications over temperature are guaranteed by design.
All currents into the device are positive. All currents out of the device are negative. All voltages are referenced to their respective
ground (GNDA or GNDB), unless otherwise noted.
VLDO max indicates voltage capability of the circuit. Power-dissipation requirements may limit VLDO max to a lower value.
Not production tested. Guaranteed by design.
ΔV
OD
and ΔV
OC are the changes in VOD and VOC, respectively, when the TXD input changes state.
The short-circuit output current applies to the peak current just prior to foldback-current limiting. The short-circuit foldback output
current applies during current limiting to allow a recovery from bus contention. See TOC 6 and TOC 7 in the Typical Operating
Chacteristics section.
CMTI is the maximum sustainable common-mode voltage slew rate while maintaining the correct output states. CMTI applies to
both rising and falling common-mode voltage edges. Tested with the transient generator connected between GNDA and GNDB.
ΔV
CM = 1kV.
Capacitive load includes test probe and fixture capacitance.
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