AUTOMOTIVE GRADE
Features
AUIRFS8407-7P
HEXFET
®
Power MOSFET
D
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
S
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
40V
1.0mΩ
1.3mΩ
306A
240A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
S
G
S
S
S
S
Applications
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Applications
D
2
Pak 7 Pin
G
D
S
Gate
Drain
Source
Base part number
Package Type
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
800
800
Orderable Part Number
AUIRFS8407-7P
AUIRFS8407-7TRL
AUIRFS8407-7TRR
AUIRFS8407-7P
D2Pak-7PIN
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
E
AS (tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
306
216
240
1040
231
1.5
± 20
344
508
See Fig. 14, 15, 24a, 24b
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
°C
300
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
1
www.irf.com
© 2013 International Rectifier
April 30, 2013
AUIRFS8407-7P
Thermal Resistance
Symbol
R
θJC
R
θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
0.65
40
Units
°C/W
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min. Typ. Max. Units
40
–––
–––
2.2
–––
–––
–––
–––
–––
––– –––
0.035 –––
1.0
1.3
–––
3.9
–––
1.0
––– 150
––– 100
––– -100
2.2
–––
V
V/°C
mΩ
V
μA
nA
Ω
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 100A
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
122
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
41
51
99
18
62
78
51
7437
1097
748
1314
1735
–––
225
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 10V, I
D
= 100A
I
D
= 100A
V
DS
=20V
V
GS
= 10V
I
D
= 100A, V
DS
=0V, V
GS
= 10V
V
DD
= 20V
I
D
= 30A
R
G
= 2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
ns
pF
Diode Characteristics
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
306
Conditions
D
MOSFET symbol
showing the
A
G
integral reverse
––– ––– 1040
S
p-n junction diode.
–––
1.0
1.3
V T
J
= 25°C, I
S
= 100A, V
GS
= 0V
–––
3.5
––– V/ns T
J
= 175°C, I
S
= 100A, V
DS
= 40V
–––
37
–––
T
J
= 25°C
V
R
= 34V,
ns
–––
38
–––
T
J
= 125°C
I
F
= 100A
di/dt = 100A/μs
–––
34
–––
T
J
= 25°C
nC
–––
36
–––
T
J
= 125°C
–––
1.8
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 240A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.069mH, R
G
= 50Ω,
I
AS
= 100A, V
GS
=10V. Part not recommended for use above
this value.
I
SD
≤
100A, di/dt
≤
1288A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
R
θJC
value shown is at time zero.
2
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© 2013 International Rectifier
April 30, 2013
AUIRFS8407-7P
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
1000
BOTTOM
ID, Drain-to-Source Current (A)
1000
BOTTOM
100
10
5.0V
100
5.0V
≤
60μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
≤
60μs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
10000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.0
ID = 100A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10V
ID, Drain-to-Source Current (A)
1000
100
TJ = 175°C
T J = 25°C
10
VDS = 10V
≤
60μs PULSE WIDTH
1.0
2
3
4
5
6
7
8
9
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 100A
VDS= 32V
VDS= 20V
10000
Ciss
Coss
Crss
1000
100
1
10
VDS, Drain-to-Source Voltage (V)
100
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
0
20 40 60 80 100 120 140 160 180 200
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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© 2013 International Rectifier
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
April 30, 2013
AUIRFS8407-7P
10000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 175°C
100
T J = 25°C
10
VGS = 0V
1.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
1000
1msec
100
Limited by
package
10msec
DC
1
10
100
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
VDS, Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
350
Limited By Package
300
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
49
48
47
46
45
44
43
42
41
40
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Id = 1.0mA
250
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
1.0
0.9
0.8
0.7
Fig 10.
Drain-to-Source Breakdown Voltage
1400
EAS , Single Pulse Avalanche Energy (mJ)
1200
1000
800
600
400
200
0
ID
TOP
22A
46A
BOTTOM 100A
Energy (μJ)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-0.1
-5
0
5
10
15
20
25
30
35
40
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
4
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© 2013 International Rectifier
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
April 30, 2013
AUIRFS8407-7P
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔTj
= 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs.Pulsewidth
350
300
EAR , Avalanche Energy (mJ)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
ΔT
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
Δ
T/ Z
thJC
I
av
= 2ΔT/ [1.3·BV·Z
th
]
Δ
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
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© 2013 International Rectifier
April 30, 2013
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