®
BYT 30PI-1000
FAST RECOVERY RECTIFIER DIODE
VERY HIGH REVERSE VOLTAGE CAPABILITY
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
INSULATED: Capacitance 15pF
Insulating voltage 2500 V
RSM
K
SUITABLE APPLICATIONS
FREE WHEELING DIODE IN CONVERTERS
AND MOTOR CONTROL CIRCUITS
RECTIFIER IN S.M.P.S.
ABSOLUTE MAXIMUM RATINGS
(limiting values)
Symbol
V
RRM
V
RSM
I
FRM
I
F (RMS)
I
F (AV)
Parameter
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Repetive Peak Forward Current
RMS Forward Current
O
so
b
I
FSM
P
T
stg
T
j
Symbol
R
th (j - c)
te
le
Average Forward Current
Surge non Repetitive Forward Current
ro
P
uc
d
s)
t(
so
b
-O
t
p
≤
10µs
P
te
le
Isolated
DOP3I
(Plastic)
od
r
s)
t(
uc
A
Value
1000
1000
375
70
Unit
V
V
A
A
A
A
W
°C
T
c
= 50°C
δ
= 0.5
t
p
= 10ms
Sinusoidal
T
c
= 50°C
30
200
60
- 40 to +150
Power Dissipation
Storage and Junction Temperature Range
THERMAL RESISTANCE
Parameter
Junction-case
Value
1.6
Unit
°C/W
October 1999 - Ed: 2A
1/5
BYT 30PI-1000
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Synbol
I
R
T
j
= 25°C
T
j
= 100°C
V
F
T
j
= 25°C
T
j
= 100°C
I
F
= 30A
Test Conditions
V
R
= V
RRM
Min.
Typ.
Max.
100
5
1.9
1.8
Unit
µA
mA
V
RECOVERY CHARACTERISTICS
Symbol
t
rr
T
j
= 25°C
Test Conditions
I
F
= 1A
I
F
= 0.5A
di
F
/dt = - 15A/µs
I
R
= 1A
V
R
= 30V
I
rr
= 0.25A
Min.
Typ.
Max.
165
70
Unit
ns
TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance)
Symbol
t
IRM
di
F
/dt = - 120A/µs
di
F
/dt = - 240A/µs
I
RM
di
F
/dt = -120A/µs
di
F
/dt = - 240A/µs
Test Conditions
V
CC
= 200 V I
F
= 30A
L
p
≤
0.05µH T
j
= 100°C
See figure 11
Min.
Typ.
TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance)
Symbol
C=
V
RP
V
CC
T
j
= 100°C
di
F
/dt = - 30A/µs
Test Conditions
V
CC
= 200V
L
p
= 5µH
To evaluate the conduction losses use the following equations:
V
F
= 1.47 + 0.010 I
F
P = 1.47 x I
F(AV)
+ 0.010 I
F2(RMS)
Figure 1. Low frequency power losses versus
average current
O
so
b
te
le
ro
P
uc
d
s)
t(
I
F
= I
F (AV)
See figure 12
so
b
-O
P
te
le
Min.
od
r
Typ.
s)
t(
uc
Max.
200
19.5
Unit
ns
120
A
22
Max.
4.5
Unit
Figure 2. Peak current versus form factor
2/5
BYT 30PI-1000
Figure 3. Non repetitive peak surge current
versus overload duration
Figure 4. Thermal impedance versus pulse
width
Figure 5. Voltage drop versus forward current
Figure 6. Recovery charge versus di
F
/d
t-
Figure 7. Recovery time versus di
F
/d
t-
O
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
od
r
s)
t(
uc
Figure 8. Peak reverse current versus di
F
/d
t-
3/5
BYT 30PI-1000
Figure 9. Peak forward voltage versus di
F
/d
t-
Figure 10. Dynamic parameters versus
junction temperature.
Figure 11. Turn-off switching characteristics (without series inductance).
Figure 12. Turn-off switching characteristics (with series inductance)
O
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
od
r
s)
t(
uc
4/5
BYT 30PI-1000
PACKAGE MECHANICAL DATA :
Isolated DOP3I Plastic
REF.
A
B
C
D
E
F
G
H
K
L
N
P
R
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.4
4.6
0.173
0.181
1.45
1.55
0.057
0.061
14.35
15.60
0.565
0.614
0.5
0.7
0.020
0.028
2.7
2.9
0.106
0.114
15.8
16.5
0.622
0.650
20.4
21.1
0.815
0.831
15.1
15.5
0.594
0.610
3.4
3.65
0.134
0.144
4.08
4.17
0.161
0.164
10.8
11.3
0.425
0.444
1.20
1.40
0.047
0.055
4.60 typ.
0.181 typ.
Cooling method: by conduction (method C)
Marking: type number
Weight: 18.84g
Recommended torque value: 250cm. N
Maximum torque value: 310cm. N
O
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval
of STMicroelectronics.
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
od
r
s)
t(
uc
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