TGA4502-SCC
K Band High Power Amplifier
Key Features
•
•
•
•
•
•
•
•
17-27 GHz Application Frequency Range
22 dB Nominal Gain
29 dBm Nominal P1dB
37 dBm Nominal OTOI
15 dB Nominal Return Loss
0.25 um pHEMT 2MI Technology
Bias 7 V @ 760 mA
Chip Dimensions 1.52 x 3.29 x 0.1 mm
Product Description
The TriQuint TGA4502-SCC is a compact
High Power Amplifier MMIC for K-band
applications. The part is designed using
TriQuint’s proven standard 0.25 um gate
power pHEMT production process.
The TGA4502-SCC provides a nominal
29 dBm of output power at 1 dB gain
compression from 17-27 GHz with a small
signal gain of 22 dB.
The part is ideally suited for low cost
emerging markets such as K-band
Satellite Communications, Point-to-Point
Radio, and Point-to-Multi Point
Communications.
The TGA4502-SCC is 100% DC and RF
tested on-wafer to ensure performance
compliance.
P1dB (dBm)
Primary Applications
•
•
•
K Band Sat-Com
Point-to-Point Radio
Point-to-Multipoint Communications
Fixtured Measured Performance
Bias Conditions: Vd = 7 V, Id = 760 mA
35
33
31
29
27
25
23
21
17
18
19
20
21
22
23
24
25
26
27
P1dB
Psat
Frequency (GHz)
30
24
18
12
G ain
30
24
12
6
18
6
0
-6
-12
-18
-24
-30
Inpu
t
t
Output
0
-6
-12
-18
-24
-30
18
20
22
24
26
28
30
32
14
16
Frequency (G Hz)
1
TriQuint Semiconductor Texas Phone: www.triquint.com (972)994-8465 Fax (972)994 8504 Info-mmw@tqs.com
Oct 2008 © Rev -
Return Loss (dB)
Gain (dB)
TGA4502-SCC
TABLE I
ABSOLUTE MAXIMUM RATINGS 1/
SYMBOL
V
+
V
-
I
+
| I
G
|
P
IN
P
D
PARAMETER
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Mounting Temperature (30 Seconds)
Storage Temperature
VALUE
8V
-5V TO 0V
1100 mA
28 mA
26 dBm
8.8 W
200
°C
320
°C
-65 to 150
°C
NOTES
2/
2/
2/
2/, 3/
4/, 5/
Tchannel Channel Temperature
1/
These ratings represent the maximum operable values for this device. Stresses beyond those
listed under “Absolute Maximum Ratings” may cause permanent damage to the device and/or
affect device lifetime. These are stress ratings only, and functional operation of the device at
these conditions is not implied.
Junction operating temperature will directly affect the device median lifetime. For maximum life, it
is recommended that junction temperatures be maintained at the lowest possible levels.
2/
2
TriQuint Semiconductor Texas Phone: www.triquint.com (972)994-8465 Fax (972)994 8504 Info-mmw@tqs.com
Oct 2008 © Rev -
TGA4502-SCC
TABLE II
DC PROBE TEST
(T
A
= 25
°C,
Nominal)
SYMBOL
I
dss, Q1
G
m, Q1
V
p, Q1,2, 3-6, 7-10
V
BVGD, Q1-10
V
BVGS, Q1,2,3-6,7-10
PARAMETER
Saturated Drain Current
Transconductance
Pinch-off Voltage
Breakdown Voltage Gate-Drain
Breakdown Voltage Gate-Source
MINIMUM
60
132
-1.5
-30
-30
MAXIMUM
282
318
-0.5
-13
-13
UNIT
mA
mS
V
V
V
Note: Q1 & Q2 are 600 um FETs. Q3-6 & Q7-10 are 2400 um FETs. Q1-10 is a 6000 um FET.
TABLE III
RF CHARACTERIZATION TABLE
(T
A
= 25
°C,
Nominal)
Vd = 7 V, Id = 760 mA
SYMBOL
Gain
PARAMETER
Small Signal Gain
TEST
CONDITION
F = 17 – 18 GHz
F = 17.5, 18 GHz
F = 20, 22, 24 GHz
F = 26.5 GHz
F = 27 GHz
F = 17 – 27 GHz
F = 17.5, 18, 20,
22, 24 GHz
F = 26.5 GHz
F = 17 – 27 GHz
F = 17.5, 18, 20,
22, 24 GHz
F = 26.5 GHz
F = 17 – 27 GHz
F = 18, 26.5 GHz
F = 17 – 27 GHz
F = 18, 26 GHz
MINIMUM
--
17
18
17
--
--
--
--
--
--
--
--
27
--
34.5
LIMITS
TYPICAL
22
--
23
--
20
20
--
--
15
--
--
30
UNITS
MAXIMUM
--
--
--
--
--
--
12
10
--
12
10
--
--
--
--
dB
IRL
Input Return Loss
dB
ORL
Output Return Loss
dB
P
1dB
OTOI *
Output Power @
1dB Gain
Compression
Output Third Order
Intercept
dBm
37
--
dBm
* Pin/tone = -7 dBm, Separation = 0.010 GHz
3
TriQuint Semiconductor Texas Phone: www.triquint.com (972)994-8465 Fax (972)994 8504 Info-mmw@tqs.com
Oct 2008 © Rev -
TGA4502-SCC
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
Tchannel
(
o
C)
150
θ
JC
Thermal Resistance Vd = 7 V
Id = 760 mA
(channel to backside of
Pdiss = 5.3 W
carrier)
θ
JC
(°C/W)
°
15.1
Tm
(HRS)
1 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil
o
CuMo Carrier at 70 C baseplate temperature. Worst case condition with no RF
applied, 100% of DC power is dissipated.
Median Lifetime (Tm) vs. Channel Temperature
1.E+13
1.E+12
Median Lifetime (Hours)
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
25
FET3
50
75
100
125
150
175
200
Channel Temperature (
°
C)
4
TriQuint Semiconductor Texas Phone: www.triquint.com (972)994-8465 Fax (972)994 8504 Info-mmw@tqs.com
Oct 2008 © Rev -
TGA4502-SCC
Measured Fixtured Data
Bias Conditions: Vd = 7 V, Id = 760 mA
30
24
18
12
Gain
30
24
12
6
18
6
0
-6
-12
-18
-24
-30
Inpu
t
t
Output
0
-6
-12
-18
-24
-30
14
16
18
20
22
24
26
28
30
32
Frequency (GHz)
35
33
Psat
P1dB (dBm)
31
29
27
25
23
21
17
18
19
20
21
22
23
24
25
26
27
P1dB
Frequency (GHz)
TriQuint Semiconductor Texas Phone: www.triquint.com (972)994-8465 Fax (972)994 8504 Info-mmw@tqs.com
Oct 2008 © Rev -
Return Loss (dB)
5
Gain (dB)
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