REVISIONS
LTR
A
B
C
D
E
F
DESCRIPTION
Add case outline 2 for device types 01 and 02. Update format. Editorial
changes throughout.
Changes to large-signal voltage gain test and to the output voltage swing test.
Changes IAW NOR 5962-R193-93.
Add case outline K. Change boilerplate to add one-part part numbers.
Add delta test limits. Redrawn.
Add radiation hardness requirements. Update boilerplate. -rrp
Change to the slew rate test condition A
VCL
in table I. -rrp
Add case outline D. Remove radiation exposure circuit. Changes made to
1.2.4, 1.3, 3.2.3, figure 1, and table IIA. Update boilerplate to reflect current
requirements. -rrp
Update drawing to current requirements. Deleted unused group E boilerplate
paragraphs. –rrp
Add device types 03 and 04 tested at low dose rate. Make changes to 1.2.2,
1.5, Table I, figure 1, Table IIB, 4.4.4.1. - ro
DATE (YR-MO-DA)
89-11-07
93-08-26
96-11-25
98-06-19
00-10-04
03-03-19
APPROVED
M. A. Frye
M. A. Frye
R. Monnin
R. Monnin
R. Monnin
R. Monnin
G
H
11-04-06
11-11-16
C. Saffle
C. Saffle
THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED.
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
REV
SHEET
PREPARED BY
Gary Zahn
H
1
H
2
H
3
H
4
H
5
H
6
H
7
H
8
H
9
H
10
H
11
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
Ray Monnin
APPROVED BY
Michael A. Frye
DRAWING APPROVAL DATE
88-08-18
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
MICROCIRCUIT, LINEAR, RADIATION
HARDENED, LOW NOISE, QUAD OPERATIONAL
AMPLIFIER, MONOLITHIC SILICON
SIZE
A
CAGE CODE
AMSC N/A
REVISION LEVEL
H
67268
SHEET
1 OF 11
5962-88565
DSCC FORM 2233
APR 97
5962-E524-11
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part
or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following examples.
For device classes M and Q:
5962
-
88565
01
C
A
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
Device
type
(see 1.2.2)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
For device class V:
5962
R
88565
01
V
C
A
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
03
04
Generic number
OP-470A
OP-471A
OP-470A
OP-471A
Circuit function
Very low noise, quad, operational amplifier
High speed, low noise, quad, operational
amplifier
Very low noise, quad, operational amplifier
High speed, low noise, quad, operational
amplifier
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed
below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q
designators will not be included in the PIN and will not be marked on the device.
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant, non-
JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Certification and qualification to MIL-PRF-38535
Q or V
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-88565
SHEET
H
2
1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows:
Outline letter
C
D
2
3
K
Descriptive designator
GDIP1-T14 or CDIP2-T14
GDFP1-F14 or CDFP2-F14
CQCC1-N20
CQCC1-N28
GDFP2-F24 or CDFP3-F24
Terminals
14
14
20
28
24
Package style
Dual-in-line
Flat pack
Square leadless chip carrier
Square leadless chip carrier
Flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
1.3 Absolute maximum ratings. 1/
Supply voltage (V
CC
) ...................................................................................
Differential input voltage ..............................................................................
Differential input current ..............................................................................
Input voltage ................................................................................................
Output short circuit duration .........................................................................
Storage temperature range .........................................................................
Lead temperature (soldering, 60 seconds) ..................................................
Power dissipation (P
D
):
Cases C and 2 .........................................................................................
Case D .....................................................................................................
Case 3 ......................................................................................................
Case K .....................................................................................................
Maximum junction temperature (T
J
) ............................................................
Thermal resistance, junction-to-ambient (
JA
):
Cases C and 2 .........................................................................................
Case D .....................................................................................................
Case 3 ......................................................................................................
Case K .....................................................................................................
1.4 Recommended operating conditions.
Ambient operating temperature range (T
A
) ................................................. -55C to +125C
Supply voltage (V
CC
) ...................................................................................
15
V
1.5 Radiation features.
Device types 01 and 02:
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s) .............. 100 krads(Si) 3/
Device types 03 and 04:
Maximum total dose available (dose rate
10 mrads(Si)/s) .................... 50 krads (Si) 4/
18
V dc
1
V dc 2/
25
mA 2/
Supply voltage
Continuous
-65C to +150C
+300C
800 mW
550 mW
500 mW
440 mW
+150C
Thermal resistance, junction-to-case (
JC
) .................................................. See MIL-STD-1835
100C/W
140C/W
110C/W
69C/W
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ The inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise
performance. If the differential input voltage exceeds
1
V, the input current should be limited to
25
mA.
3/ Device types 01 and 02 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate
effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in
MIL-STD-883, method 1019, condition A.
4/ For device type 03 and 04, radiation end point limits for the noted parameters are guaranteed for the conditions specified
in MIL-STD-883, method 1019, condition D.
1/
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-88565
SHEET
H
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
https://assist.daps.dla.mil/quicksearch/
or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein .
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-88565
SHEET
H
4
TABLE I. Electrical performance characteristics.
Conditions 1/ 2/
-55C
T
A
+125C
unless otherwise specified
Test
Symbol
Group A
subgroups
1
2, 3
Device
type
Min
01, 03
Limits
Max
0.4
0.6
Unit
Input offset voltage
V
IO
mV
M,D,P,L,R
M,D,P,L
1
1
1
2, 3
01
03
02, 04
0.6
0.6
0.8
1.2
M,D,P,L,R
M,D,P,L
Input offset current
I
IO
V
CM
= 0 V
1
1
1
2, 3
02
04
All
1.0
1.0
10
20
nA
M,D,P,L,R
M,D,P,L
Input bias current
I
IB
V
CM
= 0 V
1
1
1
2, 3
01, 02
03, 04
All
50
50
25
50
nA
M,D,P,L,R
M,D,P,L
Input noise voltage
E
n
f
O
= 1 Hz to 100 Hz, 3/
T
A
= +25C
Large-signal voltage gain
A
VS
V
O
=
10
V,
R
L
= 10 k
M,D,P,L,R
M,D,P,L
V
O
=
10
V,
R
L
= 2 k
V
O
=
10
V,
R
L
= 10 k
M,D,P,L,R
M,D,P,L
See footnotes at end of table.
3/
1
1
7
01, 02
03, 04
01, 03
02, 04
500
500
110
265
1000
750
nV
RMS
V/mV
4
5, 6
4
4
4
5, 6
4
5, 6
4
4
01, 03
01
03
01, 03
100
100
500
400
02, 04
500
375
02
04
50
50
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-88565
SHEET
H
5
Linux开发
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
