Si3973DV
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 12
R
DS(on)
(Ω)
0.087 at V
GS
= - 4.5 V
0.120 at V
GS
= - 2.5 V
0.165 at V
GS
= - 1.8 V
I
D
(A)
- 2.7
- 2.3
- 1.5
FEATURES
•
Halogen free According to IEC61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Portable
- PA Switch
- Load Switch
TSOP-6
Top V iew
G1
1
6
D1
S
1
S
2
3 mm
S2
2
5
S1
G
1
G
2
G2
3
4
D2
2.85 mm
Ordering Information:
Si3973DV-T1-E3 (Lead (Pb)-free)
Si3973DV-T1-GE3 (Lead (Pb)-free and Halogen free)
Marking Code:
MBxxx
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 1.05
1.15
0.73
- 55 to 150
- 2.7
- 2.2
-7
- 0.75
0.83
0.53
W
°C
5s
±8
- 2.4
- 1.9
A
Steady State
- 12
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
93
130
75
Maximum
110
150
90
°C/W
Unit
Document Number: 72337
S09-2277-Rev. E, 02-Nov-09
www.vishay.com
1
Si3973DV
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1.05 A, dI/dt = 100 A/µs
V
DD
= - 6 V, R
L
= 6
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 2.7 A
5.5
0.8
1.6
7.6
30
60
55
45
27
45
90
85
70
45
ns
Ω
8.5
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
=
- 4.5 V, I
D
= - 2.7 A
V
GS
= - 2.5 V, I
D
= - 2.3 A
V
GS
= - 1.8 V, I
D
= - 1 A
V
DS
= - 4.5 V, I
D
= - 2.7 A
I
S
= - 1.05 A, V
GS
= 0 V
-5
0.070
0.096
0.130
7
- 0.75
- 1.1
0.087
0.120
0.165
S
V
Ω
- 0.40
- 0.9
± 100
-1
-5
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
7
V
GS
= 5 V thru 2 V
6
I
D
- Drain Current (A)
5
4
3
2
1
0
0
1
2
3
4
5
1.5 V
6
5
4
3
2
T
C
= 125 °C
1
0
0.0
25 °C
- 55 °C
0.5
1.0
1.5
2.0
2.5
7
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 72337
S09-2277-Rev. E, 02-Nov-09
Si3973DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.6
800
0.5
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
640
C
iss
480
0.4
0.3
320
C
oss
160
C
rss
0.2
V
GS
= 1.8 V
V
GS
= 2.5 V
0.1
V
GS
= 4.5 V
0
1
2
3
4
5
6
7
0.0
0
0
3
6
9
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
V
DS
= 6 V
I
D
= 2.7 A
R
DS(on)
- On-Resiistance
(Normalized)
1.6
Capacitance
V
GS
- Gate-to-Source Voltage (V)
5
1.4
V
GS
= 4.5 V
I
D
= 2.7 A
4
1.2
3
1.0
2
1
0.8
0
0
1
2
3
4
5
6
7
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
10
0.5
On-Resistance vs. Junction Temperature
R
DS(on)
- On-Resistance (Ω)
0.4
I
D
= 2.7 A
0.3
I
S
- Source Current (A)
T
J
= 150 °C
1
0.2
I
D
= 1 A
0.1
T
J
= 25 °C
0.1
0.00
0.3
0.6
0.9
1.2
1.5
0.0
0
1
2
3
4
5
6
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72337
S09-2277-Rev. E, 02-Nov-09
www.vishay.com
3
Si3973DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.3
I
D
= 250
µA
0.2
V
GS(th)
Variance (V)
8
6
Power (W)
0.1
4
0.0
2
- 0.1
- 0.2
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (s)
10
30
T
J
- Temperature (°C)
Threshold Voltage
10
Limited by
RDS(on) *
Single Pulse Power, Junction-to-Ambient
1 ms
I
D
- Drain Current (A)
1
10 ms
100 ms
0.1
T
C
= 25 °C
Single Pulse
1 s, 10 s
DC
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 130 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 72337
S09-2277-Rev. E, 02-Nov-09
Si3973DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?72337.
Document Number: 72337
S09-2277-Rev. E, 02-Nov-09
www.vishay.com
5
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
