PD - 96358
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (on) Non Punch Through IGBT
Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
IRGS15B60KPbF
C
V
CES
= 600V
I
C
= 15A, T
C
=100°C
G
E
t
sc
> 10µs, T
J
=150°C
V
CE(on)
typ. = 1.8V
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D
2
Pak
IRGS15B60KPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current Vge = 15V
Clamped Inductive Load Current Vge = 20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Max.
600
31
15
62
62
±20
208
83
-55 to +150
Units
V
A
f
V
W
P
D
@ T
C
= 100°C Maximum Power Dissipation
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θCS
R
θJA
Junction-to-Case-IGBT
Case-to-Sink (flat, greased surface)
Weight
Junction-to-Ambient (PCB Mount steady state)
Min.
–––
–––
–––
–––
Typ.
–––
0.5
–––
1.44
Max.
0.6
–––
40
–––
Units
°C/W
c
g (oz)
www.irf.com
02/22/11
1
IRGS15B60KPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆TJ
gfe
I
CES
I
GES
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Min.
600
—
1.5
—
—
3.5
—
—
—
—
—
Typ.
—
0.3
1.8
2.05
2.1
4.5
-10
10.6
5.0
500
—
Max. Units
—
—
2.2
2.5
2.6
5.5
—
—
150
1000
±100
V
V
Conditions
V
GE
= 0V, I
C
= 500µA
Ref.Fig
V/°C V
GE
= 0V, I
C
= 1.0mA (25°C-150°C)
I
C
= 15A, V
GE
= 15V, T
J
= 25°C
V
I
C
= 15A, V
GE
= 15V, T
J
= 125°C
I
C
= 15A, V
GE
= 15V, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250µA
5,6,7
8,9,10
8,9
10,11
mV/°C V
CE
= V
GE
, I
C
=1.0mA (25°C - 150°C)
S V
CE
= 50V, I
C
= 20A, PW = 80µs
µA
nA
V
GE
= 0V, V
CE
= 600V, T
J
= 25°C
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
GE
= ± 20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
56
7.0
26
220
340
560
34
16
184
20
355
490
835
34
18
203
28
850
75
35
Max. Units
84
10
39
330
455
785
44
22
200
26
470
600
1070
44
25
226
36
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
I
C
= 62A
ns
J
ns
J
nC
I
C
= 15A
V
GE
= 15V
V
CC
= 400V
Conditions
Ref.Fig
CT1
I
C
= 15A, V
CC
= 400V, V
GE
= 15V
R
G
= 22Ω, L = 200µH
L
S
= 150nH T
J
= 25°C
CT4
d
CT4
I
C
= 15A, V
CC
= 400V, V
GE
= 15V
R
G
= 22Ω, L = 200µH
L
S
= 150nH T
J
= 25°C
I
C
= 15A, V
CC
= 400V, V
GE
= 15V
R
G
= 22Ω, L = 200µH
L
S
= 150nH T
J
= 150°C
CT4
12,14
WF1, WF2
13, 15
CT4
WF1
WF2
d
I
C
= 15A, V
CC
= 400V, V
GE
= 15V
R
G
= 22Ω, L = 200µH
L
S
= 150nH T
J
= 150°C
4
CT2
FULL SQUARE
—
—
V
CC
= 500V, Vp =600V
Rg = 22Ω, V
GE
= +20V to 0V, T
J
=150°C
V
CC
= 360V, Vp =600V ,T
J
= 150°C
Rg = 22Ω, V
GE
= +15V to 0V
10
µs
CT3
WF3
Note
to
are on page 11
2
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IRGS15B60KPbF
35
30
25
240
200
160
Ptot (W)
0
20
40
60
80
100 120 140 160
IC (A)
20
15
10
5
0
T C (°C)
120
80
40
0
0
20
40
60
80
100 120 140 160
T C (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
Fig. 2
- Power Dissipation vs. Case
Temperature
100
100
10
IC (A)
10 µs
10
100 µs
1
DC
1ms
1
0.1
1
10
100
VCE (V)
1000
10000
IC A)
0
10
100
1000
VCE (V)
Fig. 3
- Forward SOA
T
C
= 25°C; T
J
≤
150°C
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
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3
IRGS15B60KPbF
100
90
80
70
ICE (A)
100
VGE
VGE
VGE
VGE
VGE
= 18V
= 15V
= 12V
= 10V
= 8.0V
ICE (A)
90
80
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
0
VGE
VGE
VGE
VGE
VGE
= 18V
= 15V
= 12V
= 10V
= 8.0V
1
2
3
VCE (V)
4
5
6
0
1
2
3
VCE (V)
4
5
6
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 300µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 300µs
100
90
80
70
ICE (A)
20
VGE
VGE
VGE
VGE
VGE
= 18V
= 15V
= 12V
= 10V
= 8.0V
VCE (V)
18
16
14
12
10
8
6
4
2
0
ICE = 5.0A
ICE = 15A
ICE = 30A
60
50
40
30
20
10
0
0
1
2
3
VCE (V)
4
5
6
4
6
8
10
12
14
16
18
20
VGE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 300µs
Fig. 8
- Typical V
CE
vs. V
GE
T
J
= -40°C
4
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IRGS15B60KPbF
20
18
16
14
VCE (V)
VCE (V)
20
18
16
14
ICE = 5.0A
ICE = 15A
ICE = 30A
12
10
8
6
4
2
0
4
6
8
10
12
14
16
18
20
4
6
8
10
12
14
16
18
20
VGE (V)
VGE (V)
ICE = 5.0A
ICE = 15A
ICE = 30A
12
10
8
6
4
2
0
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 150°C
160
140
120
100
ICE (A)
T J = 25°C
T J = 150°C
80
60
40
20
0
0
5
10
VGE (V)
15
20
T J = 150°C
T J = 25°C
Fig. 11
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
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