PD- 95559
IRF7473PbF
Applications
l
Telecom and Data-Com 24 and 48V
input DC-DC converters
l
Motor Control
l
Uninterrutible Power Supply
l
Lead-Free
Benefits
l
Ultra Low On-Resistance
l
High Speed Switching
l
Low Gate Drive Current Due to Improved
Gate Charge Characteristic
l
Improved Avalanche Ruggedness and
Dynamic dv/dt
l
Fully Characterized Avalanche Voltage
and Current
Typical SMPS Topologies
l
Full and Half Bridge 48V input Circuit
l
Forward 24V input Circuit
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
HEXFET
®
Power MOSFET
V
DSS
100V
R
DS(on)
max
26
mW
@V
GS
= 10V
I
D
6.9A
S
S
S
G
1
8
A
A
D
D
D
D
2
7
3
6
4
5
Top View
SO-8
Max.
6.9
5.5
55
2.5
0.02
± 20
5.8
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 8
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1
8/17/04
IRF7473PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
100
–––
–––
3.5
–––
–––
–––
–––
Typ.
–––
0.11
22
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
26
mΩ V
GS
= 10V, I
D
= 4.1A
5.5
V
V
DS
= V
GS
, I
D
= 250µA
1.0
V
DS
= 95V, V
GS
= 0V
µA
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
61
21
19
24
20
29
11
3180
230
120
830
150
230
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 4.1A
–––
I
D
= 4.1A
–––
nC
V
DS
= 50V
–––
V
GS
= 10V,
–––
V
DD
= 50V
–––
I
D
= 4.1A
ns
–––
R
G
= 6.0Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 80V
Avalanche Characteristics
Parameter
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
140
4.1
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
55
140
2.3
A
55
1.3
–––
–––
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 4.1A, V
GS
= 0V
T
J
= 25°C, I
F
= 4.1A
di/dt = 100A/µs
D
S
2
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IRF7473PbF
1000
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
1000
100
I
D
, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
TOP
10
10
1
6.0V
0.1
1
5.5V
0.01
0.1
1
20µs PULSE WIDTH
Tj = 25°C
10
100
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
VDS, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
100
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 6.9A
I
D
, Drain-to-Source Current (A)
2.0
T
J
= 150
°
C
10
1.5
1
1.0
T
J
= 25
°
C
0.1
V DS = 25V
20µs PULSE WIDTH
5
6
7
8
9
10
11
12
0.5
0.01
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7473PbF
100000
20
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
I
D
=
4.1A
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
16
10000
C, Capacitance(pF)
Ciss
1000
12
Coss
Crss
8
100
4
10
1
10
100
0
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
I
SD
, Reverse Drain Current (A)
100
10
T
J
= 150
°
C
T
J
= 25
°
C
1
10
100µsec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
1msec
10msec
100
1000
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
0.1
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7473PbF
8.0
V
DS
V
GS
6.0
R
D
I
D
, Drain Current (A)
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
-
V
DD
4.0
2.0
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0.0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJA
)
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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