d. Maximum under steady state conditions is 650 °C/W.
t
5
s
Steady State
Symbol
R
thJA
Typical
440
540
Maximum
530
650
Unit
°C/W
Document Number: 73896
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
1
Si1050X
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 5 V
V
DS
= 8 V, V
GS
= 0 V
V
DS
= 8 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
=
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 1.34 A
V
GS
= 2.5 V, I
D
= 1.29 A
V
GS
= 1.8 V, I
D
= 1.23 A
V
GS
= 1.5 V, I
D
= 0.76 A
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 1.0 A, dI/dt = 100 A/µs
I
S
= 1.0 A
0.8
18.5
3.7
6.7
11.8
6
1.2
28
5.7
ns
A
V
nC
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 4 V, R
L
= 3.6
I
D
1.1 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
V
DS
= 4 V, V
GS
= 5 V, I
D
= 1.34 A
V
DS
= 4 V, V
GS
= 4.5 V, I
D
= 1.34 A
V
DS
= 4 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 4 V, I
D
= 1.34 A
6
0.071
0.078
0.085
0.092
4.12
585
190
130
7.7
7.1
1.14
1.69
3.5
6.8
35
25
6
4.6
10.2
53
37.5
9
ns
11.6
10.7
nC
pF
0.086
0.093
0.102
0.120
S
0.35
8
18.2
- 2.55
0.9
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source On-State Resistance
a
R
DS(on)
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
测试/测量
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
