IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
DISCRETE SEMICONDUCTORS
DATA SHEET
BYR29 series
Rectifier diodes
ultrafast
Product
specification
September 1998
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
BYR29 series
SYMBOL
QUICK REFERENCE DATA
V
R
= 500 V/ 600 V/ 700 V /
800 V
k
1
a
2
V
F
≤
1.5 V
I
F(AV)
= 8 A
t
rr
≤
75 ns
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYR29 series is supplied in the
conventional
leaded
SOD59
(TO220AC) package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
1
square wave;
δ
= 0.5;
T
mb
≤
115 ˚C
Repetitive peak forward current t = 25
µs; δ
= 0.5;
T
mb
≤
115 ˚C
Non-repetitive peak forward
t = 10 ms
current
t = 8.3 ms
sinusoidal; with
reapplied V
RRM(max)
Storage temperature
Operating junction temperature
CONDITIONS
BYR29
-
-
-
-
-
-
-
-40
-
MIN.
-500
500
500
500
MAX.
-600
600
600
600
8
16
60
66
150
150
-700
700
700
700
-800
800
800
800
UNIT
V
V
V
A
A
A
A
˚C
˚C
T
stg
T
j
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
in free air.
-
TYP.
-
60
MAX.
2.5
-
UNIT
K/W
K/W
1
Neglecting switching and reverse current losses
September 1998
1
Rev 1.300
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
CONDITIONS
I
F
= 8 A; T
j
= 150˚C
I
F
= 20 A
V
R
= V
RRM
V
R
= V
RRM
; T
j
= 100 ˚C
I
F
= 2 A to V
R
≥
30 V;
dI
F
/dt = 20 A/µs
I
F
= 1 A to V
R
≥
30 V;
dI
F
/dt = 100 A/µs
I
F
= 10 A to V
R
≥
30 V;
dI
F
/dt = 50 A/µs; T
j
= 100 ˚C
I
F
= 10 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
BYR29 series
TYP.
1.07
1.75
1.0
0.1
150
60
-
5.0
MAX.
1.50
1.95
10
0.2
200
75
6
-
UNIT
V
V
µA
mA
nC
ns
A
V
I
dI
F
dt
F
20
PF / W
Vo = 1.26 V
Rs = 0.03 Ohms
BYR29
Tmb(max) / C
D = 1.0
100
t
15
0.5
112.5
rr
time
10
0.2
0.1
t
p
t
p
T
t
125
Q
I
R
I
s
10%
100%
5
I
D=
137.5
T
rrm
0
0
2
4
6
IF(AV) / A
8
10
150
12
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
√
D.
PF / W
Vo = 1.26 V
Rs = 0.03 Ohms
I
F
15
BYR29
Tmb(max) / C
a = 1.57
2.2
1.9
120
10
2.8
4
130
time
VF
V
VF
time
fr
0
0
1
2
5
140
3
4
IF(AV) / A
5
6
7
150
8
Fig.2. Definition of V
fr
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
September 1998
2
Rev 1.300
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast
BYR29 series
1000
trr / ns
IF=10 A
30
25
IF / A
Tj = 25 C
Tj = 150 C
BYR29
100
1A
20
15
typ
max
10
Tj = 25 C
Tj = 100 C
1
1
10
dIF/dt (A/us)
100
10
5
0
0
0.5
1
1.5
VF / V
2
2.5
3
Fig.5. Maximum t
rr
at T
j
= 25˚C and 100˚C.
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Qs / nC
10
Irrm / A
IF=10A
1000
IF = 10A
1
IF=1A
100
2A
0.1
Tj = 25 C
Tj = 100 C
0.01
1
10
-dIF/dt (A/us)
100
10
1.0
10
-dIF/dt (A/us)
100
Fig.6. Maximum I
rrm
at T
j
= 25˚C and 100˚C.
Fig.8. Maximum Q
s
at T
j
= 25˚C
10
Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
P
D
t
p
D=
t
p
T
t
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV29
10s
Fig.9. Transient thermal impedance Z
th
= f(t
p
)
September 1998
3
Rev 1.300
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