Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +160°C
Junction Temperature .....................................................+150°C
Lead Temperature (soldering, 10s)..........Reflow Profile (Note 2)
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specifications. For detailed information
on package thermal considerations, refer to
www.maxim-ic.com/thermal-tutorial.
Note 2:
Refer to Application Note 1891:
Wafer-Level Packaging (WLP) and Its Applications.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
CAUTION!
ESD SENSITIVE DEVICE
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 2.5V to 4.2V, T
A
= -40°C to +85°C, V
ENA
= 2.7V, no RF signal applied. Typical values are at V
CC
= 2.8V, T
A
= +25°C, unless
otherwise noted.) (Note 3)
PARAMETER
Supply Voltage
Supply Current
Shutdown Supply Current
ENA Logic-High Threshold
ENA Logic-Low Threshold
ENA Input Current
V
IH
V
IL
V
ENA
= 1.1V
SYMBOL
V
CC
I
CC
V
CC
= 2.8V, RF input = -24dBm to +3dBm
V
ENA
= 0V
1.1
0
25
CONDITIONS
MIN
2.5
TYP
2.8
5
0.5
MAX
4.2
8
10
2.7
0.6
UNITS
V
mA
µA
V
V
µA
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 2.8V, T
A
= -40°C to +85°C, V
ENA
= 2.7V, f
RF
= 800MHz to 2GHz, unless otherwise noted. Typical values are at T
A
= +25°C.)
(Note 3)
PARAMETER
RF Input Frequency
Maximum Output Voltage
Minimum Output Voltage
Minimum Input Power Level
Log Slope
Log Conformance Error with
10dB Step
Power-Detector Accuracy Due to
Temperature
RFIN at +3dBm
No RF input power
+1dB input power step results in at least
25mV increase in V
OUT
(Note 4)
[(V
OUT
at +3dBm) - (V
OUT
at -24dBm)]/27
(Notes 4, 5)
RF input at -4dBm to 0dBm, T
A
= -40°C to
+85°C, relative to +25°C
-24
25
-1.3
±0.4
35
45
+1.3
SYMBOL
CONDITIONS
MIN
800
1.05
1.5
300
TYP
MAX
2000
1.75
400
UNITS
MHz
V
mV
dBm
mV/dB
dB
dB
Note 3:
Guaranteed by production test at T
A
= +85°C and 800MHz. Guaranteed by design and characterization at T
A
= -40°C and
T
A
= +25°C, and over frequency limits.
Note 4:
Guaranteed by design and characterization.
Note 5:
Input power -24dBm to +3dBm. Ideal straight line calibrated with input power -20dBm and 0dBm at T
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