®
BYT230PIV-1000
BYT231PIV-1000
FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
V
F
(max)
trr (max)
FEATURES AND BENEFITS
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
INSULATED PACKAGE: ISOTOP
Insulation voltage: 2500 V
RMS
Capacitance = 45 pF
Inductance < 5 nH
DESCRIPTION
2 x 30 A
1000 V
1.8 V
80 ns
K2
A2
A2
K1
K1
A1
K2
A1
BYT231PIV-1000
BYT230PIV-1000
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Dual high voltage rectifier devices are suited for
free-wheeling function in converters and motor
control circuits.
Packaged in ISOTOP, they are intended for use in
Switch Mode Power Supplies.
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol
V
RRM
I
FRM
Parameter
Repetitive peak reverse voltage
Repetitive peak forward current
RMS forward current
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Tj
Average forward current
Tc = 55°C
δ
= 0.5
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
TM:
ISOTOP is a registered trademark of STMicroelectronics.
b
O
so
te
le
ro
P
uc
d
s)
t(
P
te
le
ISOTOP
TM
(Plastic)
od
r
s)
t(
uc
Value
1000
700
50
30
Unit
V
A
A
A
tp=5
µs
F=1kHz
tp = 10 ms Sinusoidal
200
- 40 to + 150
150
A
°C
°C
October 1999 - Ed: 3B
1/5
BYT230PIV-1000 / BYT231PIV-1000
THERMAL RESISTANCES
Symbol
R
th(j-c)
R
th(c)
Parameter
Junction to case
Per diode
Total
Coupling
Value
1.5
0.8
0.1
Unit
°C/W
When the diodes 1 and 2 are used simultaneously :
∆
Tj(diode 1) = P(diode) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
V
F
*
I
R
**
Parameter
Forward voltage drop
Reverse leakage
current
Test Conditions
Tj = 25°C
Tj = 100°C
Tj = 25°C
Tj = 100°C
V
R
= V
RRM
I
F
= 30 A
Min.
Typ.
Max.
1.9
Pulse test : * tp = 380
µs, δ
< 2%
** tp = 5 ms,
δ
< 2%
To evaluate the conduction losses use the following equation:
P = 1.47 x I
F(AV)
+ 0.010 I
F2(RMS)
RECOVERY CHARACTERISTICS
(per diode)
Symbol
t
rr
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Test Conditions
Tj = 25°C
I
F
= 1A V
R
= 30V dI
F
/dt = - 15A/µs
I
F
= 0.5A I
R
= 1A I
rr
= 0.25A
TURN-OFF SWITCHING CHARACTERISTICS
(per diode)
Symbol
t
IRM
I
RM
Parameter
Maximum reverse
recovery time
Maximum reverse
recovery current
dI
F
/dt = - 120 A/µs
dI
F
/dt = - 240 A/µs
dI
F
/dt = - 120 A/µs
dI
F
/dt = - 240 A/µs
C=
V
RP
V
CC
Turn-off overvoltage
coefficient
b
O
so
te
le
r
P
d
o
uc
100
5
1.8
s)
t(
µA
mA
Unit
V
P
te
le
Min.
od
r
Typ.
s)
t(
uc
Max.
165
80
Unit
ns
Test Conditions
V
CC
= 200 V
I
F
= 30 A
L
p
≤
0.05
µH
Tj = 100°C
(see fig. 11)
Min. Typ. Max. Unit
200 ns
120
19.5
22
4.5
/
A
Tj = 100°C V
CC
= 200V
I
F
= I
F(AV)
dI
F
/dt = - 30A/µs
L
p
= 5µH
(see fig. 12)
2/5
BYT230PIV-1000 / BYT231PIV-1000
Fig. 1:
Low frequency power losses versus
average current.
P F(av)(W)
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
0
5
Fig. 2:
Peak current versus form factor.
=0.1
=0.05
=0.2
=0.5
=1
T
I F(av)(A)
10
15
20
25
=tp/T
tp
30
35
Fig. 3:
Non repetitive peak surge current versus
overload duration.
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse duration.
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Fig. 5:
Voltage drop versus forward current.
b
O
so
te
le
ro
P
uc
d
s)
t(
P
te
le
od
r
s)
t(
uc
Fig. 6:
Recovery charge versus di
F
/dt.
3/5
BYT230PIV-1000 / BYT231PIV-1000
Fig. 7:
Recovery time versus dI
F
/dt.
Fig. 8:
Peak reverse current versus dI
F
/dt.
Fig. 9:
Peak forward voltage versus dI
F
/dt.
Fig. 10:
Dynamic parameters versus junction
temperature.
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Fig. 11:
Turn-off switching characteristics (without
serie inductance).
IF
DUT
LC
diF/dt
LC
b
O
so
te
le
ro
P
uc
d
s)
t(
P
te
le
od
r
s)
t(
uc
Fig. 12:
Turn-off switching characteristics (with
serie inductance).
IF
diF/dt
VCC
DUT
VC C
LP
VF
VF
VCC
IRM
VC C
tIRM
VRP
4/5
BYT230PIV-1000 / BYT231PIV-1000
PACKAGE MECHANICAL DATA
ISOTOP
DIMENSIONS
REF.
A
A1
B
C
C2
D
D1
E
E1
E2
G
G1
G2
F
F1
P
P1
S
Millimeters
Min.
Max.
11.80
12.20
8.90
9.10
7.8
8.20
0.75
0.85
1.95
2.05
37.80
38.20
31.50
31.70
25.15
25.50
23.85
24.15
24.80 typ.
14.90
15.10
12.60
12.80
3.50
4.30
4.10
4.30
4.60
5.00
4.00
4.30
4.00
4.40
30.10
30.30
Inches
Min.
Max.
0.465
0.480
0.350
0.358
0.307
0.323
0.030
0.033
0.077
0.081
1.488
1.504
1.240
1.248
0.990
1.004
0.939
0.951
0.976 typ.
0.587
0.594
0.496
0.504
0.138
0.169
0.161
0.169
0.181
0.197
0.157
0.69
0.157
0.173
1.185
1.193
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Ordering type
Marking
Package
ISOTOP
ISOTOP
BYT230PIV-1000 BYT230PIV-1000
BYT231PIV-1000 BYT231PIV-1000
b
O
so
te
le
ro
P
uc
d
s)
t(
Weight
P
te
le
od
r
10
10
s)
t(
uc
Base qty
Delivery
mode
Tube
Tube
28 g. (without screws)
28 g. (without screws)
Cooling method: by conduction (C)
Recommended torque value : 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recom-
mended for mounting the package on the heatsink and the 4 screws given with the screw version).The
screws supplied with the package are adapted for mounting on a board (or other types of terminals) with
a thickness of 0.6 mm min and 2.2 mm max.
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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