February 8, 2012
IRS2113MPBF
HIGH- AND LOW-SIDE DRIVER
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage – dV/dt
immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
3.3 V input logic compatible
Separate logic supply range from 3.3 V to 20 V
Logic and power ground ±5 V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Output in phase with inputs
Leadfree, RoHS Compliant
Product Summary
Topology
V
OFFSET
V
OUT
I
o+
& I
o-
(typical)
t
ON
& t
OFF
(typical)
Delay Matching
2 channels
600 V max
10 V – 20 V
2.5 A / 2.5 A
130 ns & 120 ns
20 ns max
Package Option
Description
The IRS2113MPBF is a high voltage, high speed power
MOSFET and IGBT drivers with independent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable
ruggedized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output,
down to 3.3 V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver
cross-conduction. Propagation delays are matched to
simplify use in high frequency applications. The floating
channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration which
operates up to 600 V.
MLPQ4x4-16-Lead
(without 2 leads)
Typical Connection Diagram
(Refer to Leads Assignment for correct pin configurations) This diagram shows electrical connections only.
Please refer to our Application Notes and Design Tips for proper circuit board layout.
www.irf.com
© 2008 International Rectifier
IRS2113MPBF
Qualification Information
Qualification Level
†
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
IC Latch-Up Test
RoHS Compliant
†
††
Industrial
(per JEDEC JESD 47)
Comments: This IC has passed JEDEC’s Industrial
qualification. IR’s Consumer qualification level is
granted by extension of the higher Industrial level.
†††
MSL2
MLPQ4x4 14L
(per IPC/JEDEC J-STD-
020)
Class A (+/-200V)
(per JEDEC standard JESD22-A115)
Class 1B (+/-1000V)
(per EIA/JEDEC standard EIA/JESD22-A114)
Class III (+/-1000V)
(per JEDEC standard JESD22-C101)
Class II, Level A
(per JESD78A)
Yes
††
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/
Higher qualification ratings may be available should the user have such requirements. Please
contact your International Rectifier sales representative for further information.
††† Higher MSL ratings may be available for the specific package types listed here. Please contact
your International Rectifier sales representative for further information.
www.irf.com
© 2012 International Rectifier
2
IRS2113MPBF
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Definition
Min.
Max.
Units
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
dV
S
/dt
High-side floating supply voltage
High-side floating supply offset voltage
High-side floating output voltage
Low-side fixed supply voltage
Low-side output voltage
Logic supply voltage
Logic supply offset voltage
Logic input voltage (HIN, LIN & SD)
Allowable offset supply voltage transient (Fig. 2)
-0.3
V
B
- 20
V
S
- 0.3
-0.3
-0.3
-0.3
V
CC
- 20
V
SS
-0.3
—
625
V
B
+ 0.3
V
B
+ 0.3
25
V
CC
+ 0.3
V
SS
+ 20 (†)
V
CC
+ 0.3
V
DD
+ 0.3
50
V
P
D
Package power dissipation @ TA ≤ 25°C
—
2.08
Rth
JA
Thermal resistance, junction to ambient
—
36
T
J
Junction temperature
—
150
T
S
Storage temperature
-55
150
T
L
Lead temperature (soldering, 10 seconds)
—
300
† All supplies are fully tested at 25 V, and an internal 20 V clamp exists for each supply.
V/ns
W
°C/W
°C
Recommended Operating Conditions
The input/output logic timing diagram is shown in Figure 1. For proper operation the device should be
used within the recommended conditions. The V
S
and V
SS
offset rating are tested with all supplies biased
at 15 V differential.
Symbol
V
B
V
S
Definition
High-side floating supply absolute voltage
High-side floating supply offset voltage
Min.
V
S
+10
†
Max.
V
S
+20
600
Units
V
HO
High-side floating output voltage
V
S
V
B
V
CC
Low-side fixed supply voltage
10
20
V
LO
Low-side output voltage
0
V
CC
V
DD
Logic supply voltage
V
SS
+ 3
V
SS
+ 20
V
SS
Logic ground offset voltage
5
-5 (††)
V
IN
Logic input voltage (HIN, LIN & SD)
V
SS
V
DD
T
A
Ambient temperature
-40
125
† Logic operational for V
S
of -4 V to +500 V. Logic state held for V
S
of -4 V to – V
BS.
(Please refer to the Design Tip DT97 -3 for more details).
†† When V
DD
< 5 V, the minimum V
SS
offset is limited to –V
DD
.
V
°C
www.irf.com
© 2012 International Rectifier
3
IRS2113MPBF
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS,
V
DD
) = 15 V, T
A
= 25°C and V
SS
= COM unless otherwise specified. The V
IL,
V
TH
and I
IN
parameters are referenced to V
SS
and are applicable to all three logic input leads: HIN, LIN and SD. The
V
O,
and I
O
parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol
V
IH
V
IL
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
QDD
I
IN+
I
IN-
V
BSUV+
V
BSUV-
V
CCUV+
V
CCUV-
I
O+
Definition
Logic “1” input voltage
Logic “0” input voltage
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Offset supply leakage current
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Quiescent V
DD
supply current
Logic “1” input bias current
Logic “0” input bias current
V
BS
supply undervoltage positive going threshold
V
BS
supply undervoltage negative going threshold
V
CC
supply undervoltage positive going threshold
V
CC
supply undervoltage negative going threshold
Output high short circuit pulsed current
Min Typ Max Units
9.5
—
—
—
—
—
—
—
—
—
7.5
7.0
7.4
7.0
2.0
—
—
—
—
—
—
6.0
1.4
0.15
50
A
Test
Conditions
V
I
O
= 0 A
I
O
= 20 mA
V
B
= V
S
= 600
V
V
IN
= 0 V or
V
DD
V
IN
= V
DD
V
IN
= 0 V
125 230
180 340
15 30
20 40
— 5.0
8.6 9.7
8.2 9.4
8.5 9.6
8.2 9.4
2.5
—
V
A
I
O-
Output low short circuit pulsed current
2.0
2.5
—
V
O
= 0 V,
V
IN
= V
DD
PW ≤ 10 us
V
O
= 15 V,
V
IN
= 0 V
PW ≤ 10 us
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS,
V
DD
) = 15 V, C
L
= 1000 pF, T
A
= 25°C and V
SS
= COM unless otherwise specified. The
dynamic electrical characteristics are measured using the test circuit shown in Fig. 3.
Symbol
t
on
t
off
t
sd
t
r
t
f
MT
Definition
Turn-on propagation delay
Turn-off propagation delay
Shutdown propagation delay
Turn-on rise time
Turn-off fall time
Delay matching, HS & LS turn on/off
Min Typ Max Units
—
—
—
—
—
—
130 200
120 190
130 160
25 35
17 25
—
20
Test
Conditions
V
S
= 0 V
V
S
= 600 V
ns
www.irf.com
© 2012 International Rectifier
4
IRS2113MPBF
Functional Block Diagram
www.irf.com
© 2012 International Rectifier
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
