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HN1D01FULFT

产品描述Diodes - General Purpose, Power, Switching High Speed Switching Diode
产品类别半导体    分立半导体   
文件大小237KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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HN1D01FULFT概述

Diodes - General Purpose, Power, Switching High Speed Switching Diode

HN1D01FULFT规格参数

参数名称属性值
产品种类
Product Category
Diodes - General Purpose, Power, Switching
制造商
Manufacturer
Toshiba(东芝)
RoHSDetails
产品
Product
Switching Diodes
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-363-6
Peak Reverse Voltage85 V
Max Surge Current2 A
If - Forward Current100 mA
ConfigurationQuad
Recovery Time1.6 ns
Vf - Forward Voltage920 mV
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 125 C
系列
Packaging
Cut Tape
系列
Packaging
MouseReel
系列
Packaging
Reel
Maximum Diode Capacitance4 pF
Pd-功率耗散
Pd - Power Dissipation
200 mW
工厂包装数量
Factory Pack Quantity
3000
单位重量
Unit Weight
0.000265 oz

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HN1D01FU
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D01FU
Ultra High Speed Switching Application
Small package
Low forward voltage:
Small total capacitance:
V
F (3)
= 0.92 V (typ.)
C
T
= 2.2 pF (typ.)
Fast reverse recovery time: t
rr
= 1.6 ns (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
Rating
85
80
300*
100*
2*
200
125
−55
to 125
Unit
V
V
mA
mA
A
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: This is the Absolute Maximum Ratings of single diode (Q1, Q2, Q3 or Q4).
In the case of using Unit 1 and Unit 2 independently or simultaneously, the Absolute Maximum Ratings per diode
is 75% of the single diode one.
JEDEC
JEITA
1-2T1A
TOSHIBA
Weight: 6.8 mg (typ.)
Electrical Characteristics
(Q1, Q2, Q3, Q4 Common, Ta = 25°C)
Characteristics
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
Reverse recovery time
I
R (1)
I
R (2)
C
T
t
rr
Test
Circuit
Test Condition
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
V
R
= 30 V
V
R
= 80 V
V
R
= 0, f = 1 MHz
I
F
= 10 mA (fig.1)
Min
Typ.
0.61
0.74
0.92
2.2
1.6
Max
1.20
0.1
0.5
4.0
4.0
μA
pF
ns
V
Unit
Start of commercial production
1992-05
1
2014-03-01

HN1D01FULFT相似产品对比

HN1D01FULFT HN1D01FUT5LFT
描述 Diodes - General Purpose, Power, Switching High Speed Switching Diode Diodes - General Purpose, Power, Switching 85V Vrm 80VR 300mA 2A IFSM 0.92V VF
产品种类
Product Category
Diodes - General Purpose, Power, Switching Diodes - General Purpose, Power, Switching
制造商
Manufacturer
Toshiba(东芝) Toshiba(东芝)
RoHS Details Details
产品
Product
Switching Diodes Switching Diodes
工厂包装数量
Factory Pack Quantity
3000 3000
系列
Packaging
Reel Reel

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