Data Sheet
Schottky Barrier Diode
RB521S-30
Applications
General rectification
Dimensions
(Unit : mm)
0.8±0.05
0.12±0.05
Land
size figure
(Unit : mm)
0.8
0.6
1.2±0.05
Features
1)Ultra small mold type. EMD2）
（
2)Low V
F
3)High reliability
1.6±0.1
EMD2
Construction
Silicon epitaxial planar
0.3±0.05
Structure
0.6±0.1
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
Taping
specifications
(Unit : mm)
0.2±0.05
4.0±0.1
2.0±0.05
φ1.5±0.05
φ1.55±0.05
3.5±0.05
1.75±0.1
8.0±0.15
2.40±0.05
2.45±0.1
1.25
0.06
1.3±0.06
0
0
1.25
0.06
1.26±0.05
0
0.6
0
0.2
0.76±0.05
0.75±0.05
φ0.5
0.95±0.06
0.90±0.05
0
空ポケット
Empty pocket
4.0±0.1
2.0±0.05
Absolute
maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz
・1cyc)
Junction temperature
Storage temperature
Symbol
V
R
Io
I
FSM
Tj
Tstg
Limits
30
200
1
125
-40 to +125
Unit
V
mA
A
°C
°C
Electrical
characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
-
-
Typ.
-
-
Max.
0.50
30
Unit
V
μA
Conditions
I
F
=200mA
V
R
=10V
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.03 - Rev.F
1.7
RB521S-30
Data Sheet
1000
100000
Ta=125℃
100
f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
10 Ta=75℃
1
0.1
0.01
0.001
0
100
200
300
400
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
500
1000
100
10
1
0.1
0.01
0
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=-25℃
Ta=25℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
100
Ta=125℃
10000
10
10
20
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
30
1
0
5
10
15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
450
50
Ta=25℃
IF=200mA
n=10pcs
45
40
35
30
25
20
15
10
5
0
AVE:4.775uA
Ta=25℃
VR=10V
n=30pcs
20
19
Ta=25℃
f=1MHz
VR=0V
n=10pcs
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:VR(uA)
440
430
420
410
AVE:421.0mV
400
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
18
17
16
15
14
13
12
11
10
AVE:14.33pF
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
10
Ifsm
10
Ifsm
8.3ms 8.3ms
1cyc
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1cyc
8.3ms
Ifsm
15
t
10
5
5
5
AVE:5.60A
0
0
1
IFSM DISPERSION MAP
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
0
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
1000
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
0.2
Rth(j-a)
0.5
0.4
D=1/2
DC
FORWARD POWER
DISSIPATION:Pf(W)
Rth(j-c)
100
REVERSE POWER
DISSIPATIONP
R
(w)
0.15
0.3
0.2
0.1
0
DC
Sin(θ＝180)
D=1/2
Mounted on epoxy board
IM=1mA
IF=20mA
0.1
Sin(θ＝180)
1ms
time
0.05
300us
10
0.001
0.1
10
1000
0
0
0.1
0.2
0.3
0.4
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-P½ CHARACTERISTICS
0.5
TIME:(s)
Rth-t CHARACTERISTICS
0
10
20
REVERSE VOLTAGE：VR(V)
VR-P
R
CHARACTERISTICS
30
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.03 - Rev.F
RB521S-30
Data Sheet
0.5
0A
0V
DC
Io
0.5
AVERAGE RECTIFIDE
FORWARD CURRENT Io(A)
0.4
0.3
0.2
0.1
0
0
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
t
T
VR
D=t/T
VR=15V
Tj=125℃
0A
0V
DC
Io
t
T
VR
D=t/T
VR=15V
Tj=125℃
0.4
0.3
0.2
0.1
0
D=1/2
D=1/2
Sin(θ＝180)
Sin(θ＝180)
25
50
75
100
AMBIENT TEMPERATURE：Ta(℃)
Derating Curveﾞ
125
0
25
50
75
100
125
CASE TEMPARATURE：Tc(℃)
Derating Curve
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.03 - Rev.F
Notice
Notes
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