IRFH5015PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
150
31
36
1.7
44
V
mΩ
nC
Ω
A
PQFN 5X6 mm
Q
g (typical)
R
G (typical)
I
D
(@T
mb
= 25°C)
Applications
•
•
•
•
Primary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Benefits
Features and Benefits
Features
Low RDSon (< 31 mΩ)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRFH5015PBF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH5015TRPBF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
mb
= 25°C
I
D
@ T
mb
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
mb
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
150
± 20
10
8.2
44
28
220
3.6
156
0.029
-55 to + 150
W
W/°C
°C
Units
V
A
g
g
c
Linear Derating Factor
Operating Junction and
g
Storage Temperature Range
Notes
through
are on page 9
1
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2015 International Rectifier
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May 19, 2015
IRFH5015PbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
150
–––
–––
3.0
–––
–––
–––
–––
–––
38
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.12
25.5
–––
-12
–––
–––
–––
–––
–––
36
13
4.6
11
7.4
15.6
14
1.7
9.4
9.7
14
3.4
2300
205
47
Max. Units
Conditions
–––
V V
GS
= 0V, I
D
= 250uA
––– V/°C Reference to 25°C, I
D
= 1.0mA
31
mΩ V
GS
= 10V, I
D
= 34A
5.0
V
V
DS
= V
GS
, I
D
= 150μA
––– mV/°C
20
V
DS
= 150V, V
GS
= 0V
μA
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
250
100
V
GS
= 20V
nA
-100
V
GS
= -20V
–––
S V
DS
= 50V, I
D
= 34A
54
–––
V
DS
= 75V
V
GS
= 10V
–––
nC
I
D
= 34A
–––
–––
–––
–––
nC V
DS
= 16V, V
GS
= 0V
e
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Ω
ns
V
DD
= 75V, V
GS
= 10V
I
D
= 34A
R
G
=1.3Ω
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
Max.
230
34
Units
mJ
A
pF
Avalanche Characteristics
E
AS
I
AR
d
Min.
–––
–––
Typ.
–––
–––
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Max. Units
56
A
220
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 34A, V
GS
= 0V
T
J
= 25°C, I
F
= 34A, V
DD
= 75V
di/dt = 500A/μs
D
Ã
–––
–––
1.3
V
–––
52
78
ns
–––
550
825
nC
Time is dominated by parasitic Inductance
e
S
eÃ
Thermal Resistance
Parameter
R
θJC-mb
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Mounting Base
Junction-to-Case
Junction-to-Ambient
Typ.
0.5
–––
–––
–––
Max.
0.8
15
35
22
°C/W
Units
g
Junction-to-Ambient
g
f
2
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2015 International Rectifier
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May 19, 2015
IRFH5015PbF
1000
TOP
VGS
15V
10V
9.0V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
VGS
15V
10V
9.0V
8.0V
7.0V
6.0V
5.5V
5.0V
1000
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
1
0.1
5.0V
0.01
0.1
1
≤
60μs PULSE WIDTH
Tj = 25°C
1
5.0V
≤
60μs PULSE WIDTH
Tj = 150°C
0.1
10
100
1000
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.5
ID = 34A
2.0
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 150°C
10
T J = 25°C
1.5
1.0
1
VDS = 50V
≤60μs
PULSE WIDTH
2
4
6
8
10
12
14
16
0.5
0.1
0.0
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14
ID= 34A
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
10000
C, Capacitance (pF)
VDS= 120V
VDS= 75V
VDS= 30V
Ciss
1000
Coss
100
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
10
20
30
40
50
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
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2015 International Rectifier
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
Submit Datasheet Feedback
May 19, 2015
IRFH5015PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100
10
T J = 150°C
10
100μsec
1
10msec
1msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
DC
T J = 25°C
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0.01
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
50
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
ID = 150μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
40
ID, Drain Current (A)
30
20
10
0
25
50
75
100
125
150
T C , Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base
4
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May 19, 2015
IRFH5015PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
100
90
80
70
60
50
40
30
20
10
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
VGS, Gate -to -Source Voltage (V)
T J = 25°C
T J = 125°C
ID = 34A
1000
EAS , Single Pulse Avalanche Energy (mJ)
900
800
700
600
500
400
300
200
100
0
25
50
75
ID
TOP
3.7A
7.9A
BOTTOM 34A
100
125
150
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
1000
Avalanche Current (A)
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Δ
Tj = 125°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs. Pulsewidth
5
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2015 International Rectifier
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May 19, 2015
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