• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
1
D
2
D
3
6
D
5
D
S
4
Part # code
S
1.60 mm
G
• Load Switch for Portable Devices
• Charger Switch for Portable
Devices
S
Marking Code
BLX
XXX
Lot Traceability
and Date code
G
R
1.60 mm
D
Ordering Information:
SiB433EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
- 20
±8
- 9
a
- 9
a
- 5.3
b, c
- 4.3
b, c
- 20
- 9
a
- 2
b, c
13
8.4
2.4
b, c
1.6
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
A
Maximum Power Dissipation
P
D
T
J
, T
stg
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
Temperature)
d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
b, f
t
5s
Steady State
Symbol
R
thJA
R
thJC
Typical
41
7.5
Maximum
51
9.5
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
Document Number: 65652
S12-0979-Rev. B, 30-Apr-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiB433EDK
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 4.3 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 4.3 A, V
GS
= 0 V
- 0.8
30
20
13
17
T
C
= 25 °C
-9
- 20
- 1.2
60
40
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 10 V, R
L
= 2.3
I
D
- 4.3 A, V
GEN
= - 8 V, R
g
= 1
V
DD
= - 10 V, R
L
= 2.3
I
D
- 4.3 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
0.4
V
DS
= - 10 V, V
GS
= - 8 V, I
D
= - 5.3 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 5.3 A
14
7.6
0.8
3.1
2
0.2
1
4
2
0.09
0.4
5.2
2.3
4
0.3
1.5
6
3
0.14
0.6
7.8
3.5
µs
k
21
12
nC
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-
5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 3.7 A
V
GS
= - 2.5 V, I
D
= - 3.2 A
V
GS
= - 1.8 V, I
D
= - 1.5 A
V
DS
= - 10 V, I
D
= - 3.7 A
- 15
0.047
0.064
0.085
12
0.058
0.077
0.105
S
- 0.4
- 20
- 13
2.5
-1
±6
± 0.5
-1
- 10
A
µA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical support, please contact:
pmostechsupport@vishay.com
Document Number: 65652
S12-0979-Rev. B, 30-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiB433EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.5
10-2
10-3
I
GSS
- Gate Current (A)
1.2
I
GSS
- Gate Current (mA)
T
J
= 25 °C
0.9
10-4
10-5
T
J
= 150 °C
T
J
= 25 °C
10-6
10-7
10-8
0.6
0.3
0.0
0
3
6
9
12
V
GS
- Gate-to-Source
Voltage
(V)
15
10-9
0
3
6
9
12
15
V
GS
- Gate-to-Source
Voltage
(V)
Gate Current vs. Gate-Source Voltage
20
10
Gate Current vs. Gate-Source Voltage
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 5
V
thru 2.5
V
12
V
GS
= 2
V
8
8
6
4
T
C
= 25 °C
2
T
C
= 125 °C
T
C
= - 55 °C
4
V
GS
= 1.5
V
V
GS
= 1
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
V
DS
- Drain-to-Source
Voltage
(V)
0.4
0.8
1.2
1.6
V
GS
- Gate-to-Source
Voltage
(V)
2.0
Output Characteristics
0.18
V
GS
= 1.8
V
V
GS
- Gate-to-Source
Voltage
(V)
0.15
R
DS(on)
- On-Resistance (Ω)
8
Transfer Characteristics
I
D
= 5.3 A
6
V
DS
= 10
V
V
DS
= 5
V
V
DS
= 16
V
0.12
V
GS
= 2.5
V
0.09
V
GS
= 4.5
V
4
0.06
2
0.03
0.00
0
4
8
12
I
D
- Drain Current (A)
16
20
0
0
3
6
9
12
Q
g
- Total Gate Charge (nC)
15
On-Resistance vs. Drain Current
Gate Charge
Document Number: 65652
S12-0979-Rev. B, 30-Apr-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiB433EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.5
R
DS(on)
- On-Resistance (Normalized)
1.4
V
GS
= 4.5
V,
2.5
V;
I
D
= 3.7 A
I
S
- Source Current (A)
1.3
1.2
1.1
V
GS
= 1.8
V;
I
D
= 1.5 A
1.0
0.9
0.8
0.7
- 50
0.1
0.0
T
J
= 150 °C
10
100
T
J
= 25 °C
1
- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain
Voltage
(V)
1.2
On-Resistance vs. Junction Temperature
0.18
0.8
Soure-Drain Diode Forward Voltage
0.15
R
DS(on)
- On-Resistance (Ω)
I
D
= 3.7 A; T
J
= 25 °C
I
D
= 1.5 A; T
J
= 125 °C
V
GS(th)
(V)
I
D
= 3.7 A; T
J
= 125 °C
0.7
I
D
= 250
µA
0.6
0.12
0.09
0.5
0.06
I
D
= 1.5 A; T
J
= 25 °C
0.4
0.03
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.3
- 50
- 25
0
V
GS
- Gate-to-Source
Voltage
(V)
25
50
75
100
T
J
- Temperature (°C)
125
150
On-Resistance vs. Gate-to-Source Voltage
20
Threshold Voltage
100
Limited
by
R
DS(on)
*
I
D
- Drain Current (A)
15
Power (W)
10
100
µs
1
T
A
= 25 °C
Single Pulse
0.1
BVDSS Limited
1 ms
10 ms
100 ms
1 s, 10 s
DC
10
5
0
0.001
0.01
0.1
1
Pulse (s)
10
100
1000
0.01
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
For technical support, please contact:
pmostechsupport@vishay.com
Document Number: 65652
S12-0979-Rev. B, 30-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiB433EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
15
15
12
I
D
- Drain Current (A)
Package Limited
Po
w
er (W)
12
9
9
6
6
3
3
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65652
S12-0979-Rev. B, 30-Apr-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Yamaha Motor Group旗下的i-PULSE有限公司日前已与华尔莱科技（Valor）结为合作伙伴关系，基于Valor的vPlan生产规划工具向i-PULSE组装设备的使用者提供完整的从设计到制造的NPI解决方案。在近期日本东京举办的Protec展会（6/11-6/13）上，i-PULSE首度展出了该新产品并将直接向其客户进行销售。 新产品的名称为“iPlan”，它将提供一系...[详细]
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